APEC-Advanced-Power-Elec-AP94T07GH
| Part # | APEC-Advanced-Power-Elec-AP94T07GH |
Download  | APEC-Advanced-Power-Elec-AP94T07GH |
AP94T07GH/J-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
S
▼
Simple Drive Requirement
BV
DSS
R
DS(ON)
I
D
75V
8m
Ω
75A
▼
Lower On-resistance
▼
Fast Switching Characteristic
G
▼
RoHS Compliant & Halogen-Free
Description
AP94T07 series are from Advanced Power innovated design and silicon
process technology to achieve the lowest possible on-resistance and
fast switching performance. It provides the designer with an extreme
efficient device for use in a wide range of power applications.
The TO-252 package is widely preferred for all commercial-industrial
surface mount applications using infrared reflow technique and suited
for high current application due to the low connection resistance.
The
through-hole version (AP94T07GJ) are available for low-profile
applications.
G
D
TO-251(J)
S
G
D
S
TO-252(H)
Absolute Maximum Ratings@T
j
=25
o
C(unless otherwise specified)
Symbol
Parameter
Rating
Units
V
V
DS
V
GS
Drain-Source Voltage
75
Gate-Source Voltage
+20
V
Drain Current, V
GS
@ 10V
3
Drain Current, V
GS
@ 10V
Pulsed Drain Current
1
I
D
@T
c
=25
℃
I
D
@T
c
=100
℃
I
DM
75
A
58
A
300
A
P
D
@T
c
=25
℃
P
D
@T
A
=25
℃
T
STG
Total Power Dissipation
125
W
W
℃
℃
Total Power Dissipation
4
Storage Temperature Range
Operating Junction Temperature Range
2.4
-55 to 175
-55 to 175
T
J
Thermal Data
Symbol
Parameter
Value
Units
℃
/W
℃
/W
℃
/W
Rthj-c
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)
4
Maximum Thermal Resistance, Junction-ambient
1.2
62.5
110
Rthj-a
Rthj-a
Data and specifications subject to change without notice
1
201501273
AP94T07GH/J-HF
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
BV
DSS
R
DS(ON)
V
GS(th)
Parameter
Test Conditions
Min. Typ. Max.
Units
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
V
GS
=10V, I
D
=40A
V
GS
=0V, I
D
=250uA
75
–
–
–
–
–
V
m
Ω
V
8
5
Gate Threshold Voltage
V
DS
=V
GS
, I
D
=250uA
2
g
fs
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
2
Gate-Source Charge
Gate-Drain (“Miller”) Charge
Turn-on Delay Time
2
Rise Time
V
DS
=10V, I
D
=40A
V
DS
=60V, V
GS
=0V
V
GS
=+20V, V
DS
=0V
I
D
=40A
–
–
–
–
–
–
–
–
–
–
–
–
–
–
55
–
–
S
I
DSS
I
GSS
Q
g
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Ω
25
–
+100
58
14
29
13
80
26
12
92
–
Q
gs
Q
gd
t
d(on)
t
r
V
DS
=60V
V
GS
=10V
–
V
DS
=40V
–
I
D
=40A
–
t
d(off)
t
f
Turn-off Delay Time
Fall Time
R
G
=1
Ω
–
V
GS
=10V
–
C
iss
C
oss
C
rss
R
g
Input Capacitance
V
GS
=0V
2350 3760
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
V
DS
=25V
390
245
1.3
–
–
–
f=1.0MHz
f=1.0MHz
Source-Drain Diode
Symbol
Parameter
Forward On Voltage
2
Reverse Recovery Time
2
Test Conditions
Min. Typ. Max.
Units
V
V
SD
t
rr
I
S
=40A, V
GS
=0V
I
S
=10A,
V
GS
=0
V
,
dI/dt=100A/µs
–
–
–
–
1.3
46
83
–
–
ns
nC
Q
rr
Reverse Recovery Charge
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Package limitation current is 75A.
4.Surface mounted on 1 in
2
copper pad of FR4 board
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS
PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP94T07GH/J-HF
250
200
150
100
50
160
120
80
T
C
=175
o
C
10V
T
C
=25
o
C
10V
9.0V
8.0V
9.0V
8.0V
7.0V
7.0V
V
G
=6.0V
V
G
= 6.0V
40
0
0
0.0
4.0
8.0
12.0
16.0
20.0
24.0
0.0
2.0
4.0
6.0
8.0
10.0
12.0
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.8
2.4
2.0
1.6
1.2
0.8
0.4
1.2
1.1
1
I
D
=40A
V
G
=10V
0.9
0.8
-50
0
50
100
150
200
-50
0
50
100
150
200
T
, Junction Temperature (
o
C)
T
j
, Junction Temperature (
o
C)
j
Fig 3. Normalized BV
DSS
v.s. Junction
Temperature
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
40
30
20
10
0
1.6
1.2
0.8
0.4
0.0
T
j
=175
o
C
T
j
=25
o
C
0
0.2
0.4
0.6
0.8
1
1.2
-50
0
50
100
150
200
T
j
, Junction Temperature (
o
C )
V
SD
, Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP94T07GH/J-HF
f=1.0MHz
12
4000
3000
2000
1000
0
I
D
=40A
10
V
DS
=40V
DS
=45V
DS
=60V
8
6
4
2
0
V
V
C
iss
C
oss
C
rss
0
20
40
60
80
1
5
9
13
17
21
25
29
V
DS
,Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
1000
100
10
Duty factor = 0.5
Operation in this area
limited by R
DS(ON)
0.2
0.1
100us
1ms
0.1
0.05
P
DM
t
0.02
T
0.01
10ms
100ms
Duty Factor = t/T
T
C
=25
o
C
Peak T
j
= P
DM
x R
thjc
+ T
C
Single Pulse
Single Pulse
DC
1
0.01
0.1
1
10
100
1000
0.00001
0.0001
0.001
0.01
0.1
1
10
V
DS
,Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
V
DS
V
G
90%
Q
G
10V
Q
GS
Q
GD
10%
V
GS
t
d(off)
t
r
t
d(on)
t
f
Q
Charge
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4
AP94T07GH/J-HF
MARKING INFORMATION
TO-251
Part Number
meet Rohs requirement
for low voltage MOSFET only
94T07GJ
Package Code
YWWSSS
Date Code (YWWSSS)
Y
：
Last Digit Of
The Year
WW
：
Week
SSS
：
Sequence
TO-252
Part Number
meet Rohs requirement
for low voltage MOSFET only
94T07GH
YWWSSS
Package Code
Date Code (YWWSSS)
Y
：
Last Digit Of
The Year
WW
：
Week
SSS
：
Sequence
5
