APEC-Advanced-Power-Elec-AP9923GEO-HF
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AP9923GEO-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
G2
▼
Low On-Resistance
BV
DSS
R
DS(ON)
I
D
-12V
25m
Ω
-7A
S2
S2
D2
▼
Small & Thin Package
G1
▼
Capable of 1.8V Gate Drive
▼
RoHS Compliant & Halogen-Free
S1
S1
TSSOP-8
D1
D1
D2
Description
G1
G2
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
S1
S2
Absolute Maximum Ratings@T
j
=25
o
C(unless otherwise specified)
Symbol
Parameter
Rating
Units
V
DS
V
GS
Drain-Source Voltage
– 12
V
Gate-Source Voltage
+8
V
Drain Current
3
, V
GS
@ 4.5V
Drain Current
3
, V
GS
@ 4.5V
Pulsed Drain Current
1
I
D
@T
A
=25
℃
I
D
@T
A
=70
℃
I
DM
-7.0
A
-5.0
A
-30
A
P
D
@T
A
=25
℃
Total Power Dissipation
1
W
Linear Derating Factor
0.01
W/
℃
℃
℃
T
STG
T
J
Storage Temperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
Thermal Data
Symbol
Parameter
Value
Unit
℃
/W
℃
/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient
3
125
75
Rthj-L
Maximum Thermal Resistance, Junction-lead
Data and specifications subject to change without notice
1
201501275
AP9923GEO-HF
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
BV
DSS
Parameter
Test Conditions
V
GS
=0V, I
D
=-250uA
Min. Typ. Max.
Units
Drain-Source Breakdown Voltage
-12
–
–
–
–
V
V
GS
=-4.5V, I
D
=-7A
V
GS
=-2.5V, I
D
=-6A
–
–
25
32
m
Ω
m
Ω
Static Drain-Source On-Resistance
2
R
DS(ON)
V
GS
=-1.8V, I
D
=-5A
V
DS
=V
GS
, I
D
=-250uA
V
DS
=-5V, I
D
=-7A
–
–
–
48
m
Ω
V
V
GS(th)
g
fs
Gate Threshold Voltage
-0.3
-1
Forward Transconductance
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
7
–
S
I
DSS
Drain-Source Leakage Current
uA
uA
uA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Ω
V
DS
=-12V, V
GS
=0V
–
-1
Drain-Source Leakage Current (T=70
o
C)
V =-9.6V
,V =0V
–
-10
j
DS
GS
I
GSS
Q
g
Gate-Source Leakage
Total Gate Charge
2
Gate-Source Charge
Gate-Drain (“Miller”) Charge
Turn-on Delay Time
2
Rise Time
V
GS
=+8V, V
DS
=0V
I
D
= -7A
–
+30
28
3
45
–
Q
gs
Q
gd
t
d(on)
t
r
V
DS
= -6V
V
GS
= -4.5V
V
DS
= -6V
I
D
= -5A
8
–
12
55
75
100
–
–
t
d(off)
t
f
Turn-off Delay Time
Fall Time
R
G
= 3.3
Ω
V
GS
= -5V
V
GS
=0V
–
–
C
iss
C
oss
C
rss
R
g
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
2250 3600
V
DS
=-6V
635
565
5
–
–
f=1.0MHz
f=1.0MHz
7.5
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min. Typ. Max.
Units
V
SD
t
rr
Forward On Voltage
2
Reverse Recovery Time
2
T
j
=25
℃
, I
S
=-0.84A, V
GS
=0V
I
S
= -7A,
V
GS
=0
V
,
–
–
–
–
-1.2
V
61
56
–
–
ns
nC
Q
rr
Reverse Recovery Charge
dI/dt=100A/µs
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in
2
copper pad of FR4 board ; 208
℃
/W when mounted on Min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS
PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP9923GEO-HF
30
25
20
15
10
5
30
25
20
15
10
5
T
A
=25
o
C
T
A
=150
o
C
-5.0V
-4.5V
-3.5V
-5.0V
-4.5V
-3.5V
-2.5V
-2.5V
V
G
= -1.8 V
V
G
= -1.8V
0
0
0
1
2
3
0
1
2
3
4
-V
DS
, Drain-to-Source Voltage (V)
-V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.6
1.3
1.0
0.7
0.4
40
30
20
10
I
D
= -6.0A
I
D
= -7.0A
T
A
=25
o
C
V
G
= -4.5V
Ω
0
2
4
6
8
-50
0
50
100
150
T
j
, Junction Temperature (
o
C)
-V
GS
(V)
Fig 3. On-Resistance
v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
10
0.8
0.6
0.4
0.2
0
8
6
T
j
=150
o
C
T
j
=25
o
C
4
2
0
0
0.2
0.4
0.6
0.8
1
1.2
-50
0
50
100
150
T
j
, Junction Temperature (
o
C)
-V
SD
(V)
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP9923GEO-HF
f=1.0MHz
8
10000
1000
100
6
C
iss
I
D
= -7A
V
DS
= -6V
4
C
oss
C
rss
2
0
0
10
20
30
40
50
1
3
5
7
9
11
13
Q
G
, Total Gate Charge (nC)
-V
DS
(V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Duty Factor=0.5
100us
Operation in this
area limited by
0.2
10
R
DS(ON)
1ms
0.1
0.1
0.05
10ms
1
0.02
0.01
P
DM
100ms
0.01
t
T
0.1
1s
Single Pulse
Duty Factor = t/T
DC
T
A
=25
o
C
Peak T
j
= P
DM
x R
thja
+ Ta
R
thja
=208
o
C/W
Single Pulse
0.001
0.01
0.0001
0.001
0.01
0.1
1
10
100
0.01
0.1
1
10
100
-V
DS
(V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
30
25
20
15
10
5
T
j
=25
o
DS
= -5V
C
T
j
=150
o
C
V
V
G
Q
G
-4.5V
Q
GD
Q
GS
Q
Charge
0
0
1
2
3
4
-V
GS
, Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
4
AP9923GEO-HF
MARKING INFORMATION
Part Number
meet Rohs requirement
for low voltage MOSFET only
9923GEO
Package Code
YWWSSS
Date Code (YWWSSS)
Y
：
Last Digit Of
The Year
WW
：
Week
SSS
：
Sequence
5
ADVANCED POWER ELECTRONICS CORP.
Package Outline : TSSOP-8
D
Millimeters
SYMBOLS
MIN
—
NOM
MAX
A
A1
B
—
1.20
0.15
0.30
—-
0.05
0.19
—
—
—
c
0.127
3.00
6.40
4.40
0.60
0.65 REF.
—-
D
E
2.90
6.20
4.30
0.45
3.10
6.60
4.50
0.75
E
E1
E1
L
e
θ
0°
8°
e
B
θ
L
A
1.All Dimensions Are in Millimeters.
2.Dimension Does Not Include Mold Protrusions.
A1
Draw No.
M1-O8-G-v01
TSSOP-8
TSSOP-8 FOOTPRINT
：
0.4mm
7.4mm
4.2mm
1.6mm
Pin1
0.65mm
ADVANCED POWER ELECTRONICS COR
P
.
Draw No. M1-O8-G-v01
1
