ASDsemi-ASDM2300ZA-SOT23
| Part # | ASDsemi-ASDM2300ZA-SOT23 |
Download  | ASDsemi-ASDM2300ZA-SOT23 |
AS
DM
2300ZA
2
0V N-C
HA
NNE
L
MO
S
FET
Features
Product Summary
●
V
DS
= 20V,I
D
= 4.5A
20
3
8
V
m
Ω
m
Ω
A
V
DS
R
DS(ON)
<
38
mΩ @ V
GS
=2.5V
R
DS(ON)
<
27
mΩ @ V
GS
=4.5V
●
High power and current handing capability
●
Lead free product is acquired
●
Surface mount package
R
DS(on),max
V
GS
=2.5V
R
DS(on),max
V
GS
=4.5V
I
D
2
7
4
.5
Application
●
Battery protection
●
Load switch
●
Power management
top view
D
G
SOT-23
Absolute Maximum Ratings (T
A
=25
℃
unless otherwise noted)
Parameter
Symbol
Limit
20
Unit
V
Drain-Source Voltage
Gate-Source Voltage
V
DS
±12
4.5
V
V
GS
T
A
=25
℃
T
A
=70
℃
Continuous Drain Current
A
I
D
3.6
Drain Current-Pulsed (Note 1)
Maximum Power Dissipation
13.5
1.25
A
I
DM
P
D
W
℃
Operating Junction and Storage Temperature Range
-55
T
o
1
50
T
J
,T
STG
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note 2)
R
θJA
100
℃
/W
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1.0
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Ascend Semicondutor Co.,Ltd
AS
DM
2300ZA
2
0V N-C
HA
NNE
L
MO
S
FET
Electrical Characteristics (T
A
=25
℃
unless otherwise noted)
Parameter
Symbol
Condition
Min Typ
Max
Unit
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
On Characteristics (Note 3)
Gate Threshold Voltage
BV
DSS
I
DSS
V
GS
=0V I
D
=250μA
20
–
1
V
–
–
–
–
μA
nA
V
DS
=
16
V,V
GS
=0V
I
GSS
V
GS
=±12V,V
DS
=0V
±100
V
GS(th)
R
DS(ON)
g
FS
V
DS
=V
GS
,I
D
=250μA
V
GS
=2.5V, I
D
=
3.5
A
V
GS
=4.5V, I
D
=4.5A
V
DS
=10V,I
D
=4A
0.
4
5 0.65
1
V
–
–
–
27.8
22
38
27
–
mΩ
mΩ
S
Drain-Source On-State Resistance
Forward Transconductance
Dynamic Characteristics (Note4)
Input Capacitance
10
C
lss
C
oss
C
rss
–
–
–
500
300
140
–
–
–
PF
PF
PF
V
DS
=8V,V
GS
=0V,
F=1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics (Note 4)
Turn-on Delay Time
t
d(on)
t
r
t
d(off)
t
f
–
–
–
–
–
–
–
20
18
60
28
10
2.3
2.9
40
40
108
56
15
–
nS
nS
nS
nS
nC
nC
nC
Turn-on Rise Time
V
DD
=10V,I
D
=1A
V
GS
=4.5V,R
GEN
=6Ω
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Q
g
Q
gs
Q
gd
V
DS
=10V,I
D
=3A,V
GS
=4.5V
V
GS
=0V,I
S
=1A
Gate-Source Charge
Gate-Drain Charge
–
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
Diode Forward Current (Note 2)
V
SD
I
S
–
–
–
–
1.2
1
V
A
Notes:
1.
Repetitive rating: pulse width limited by maximum junction temperature.
2.
Surface mounted on FR4 Board, t ≤ 10 sec.
3.
Pulse test: pulse width ≤ 300μs, duty cycle ≤ 2%.
4.
Guaranteed by design, not subject to production
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1.0
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8
Ascend Semicondutor Co.,Ltd
AS
DM
2300ZA
2
0V N-C
HA
NNE
L
MO
S
FET
Typical Electrical and Thermal Characteristics
Vdd
t
on
t
off
t
f
t
r
t
d(on)
V
OUT
V
IN
t
d(off)
Rl
Vin
90%
D
Vout
90%
Vgs
INVERTED
Rgen
G
10%
90%
10%
50%
S
50%
10%
PULSE WIDTH
Figure 1:Switching Test Circuit
Figure 2:Switching Waveforms
T
J
-Junction
T
e
mperature(
℃
)
T
J
-Junction
T
e
mperature(
℃
)
Figure 4 Drain Current
Figure 3 Power Dissipation
Vds Drain-Source Voltage (V)
I
D
– Drain Current (A)
Figure 5 Output CHARACTERISTICS
Figure 6 Drain-Source On-Resistance
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1.0
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Ascend Semicondutor Co.,Ltd
AS
DM
2300ZA
2
0V N-C
HA
NNE
L
MO
S
FET
Vgs Gate-Source Voltage (V)
T
J
-Junction
T
e
mperature(
℃
)
Figure 7 Transfer Characteristics
Figure 8 Drain-Source On-Resistance
Vgs Gate-Source Voltage (V)
Vds Drain-Source Voltage (V)
Figure 9 Rdson vs Vgs
Figure 10 Capacitance vs Vds
Qg Gate Charge (nC)
Vsd Source-Drain Voltage (V)
Figure 11 Gate Charge
Figure 12 Source- Drain Diode Forward
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1.0
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Ascend Semicondutor Co.,Ltd
AS
DM
2300ZA
2
0V N-C
HA
NNE
L
MO
S
FET
Vds Drain-Source Voltage (V)
Figure 13
Safe Operation Area
Square Wave Pluse Duration(sec)
Figure 14 Normalized Maximum Transient Thermal Impedance
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1.0
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Ascend Semicondutor Co.,Ltd
AS
DM
2300ZA
2
0V N-C
HA
NNE
L
MO
S
FET
Ordering and Marking Information
Device
Marking
Package
Packing
Quantity
ASDM
230
0
ZA
SO
T23
A0SHB
Tape&Reel
3
000/Reel
MARKING
PACKAGE
A0SHB
SO
T23
Ordering Number
Package
Lead Free
Halogen Free
SO
T23
ASDM
2300
–
ZA
-R
ASDM
2300
G
–
ZA
–
R
1 R:Tape
Reel
ASDM
230
0
G
–
ZA
– R
2
ZA
:
SO
T23
1 Packing Type
2
Package Type
3
Green Package
3 blank
: Lead Free
G:Halogen Free
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1.0
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Ascend Semicondutor Co.,Ltd
AS
DM
2300ZA
2
0V N-C
HA
NNE
L
MO
S
FET
Dimensions in Millimeters
Dimensions in Inches
Symbol
Min
0.90
0.00
0.90
0.30
0.08
2.80
1.20
Max
1.15
0.10
1.05
0.55
0.15
3.00
1.40
Min
0.035
0.000
0.035
0.012
0.003
0.110
0.047
Max
0.045
0.004
0.041
0.022
0.006
0.118
0.055
A
A1
A2
b
C
D
E
0.95 TYP
0.037 T
Y
P
e
e1
H
1.80
2.25
0.30
2.00
2.55
0.50
0.071
0.089
0.012
0.079
0.100
0.020
L
θ
0
8
0
8
∘
∘
∘
∘
NOV 2018 Version
1.0
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8
Ascend Semicondutor Co.,Ltd
AS
DM
2300ZA
2
0V N-C
HA
NNE
L
MO
S
FET
IMPORTANT NOTICE
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incorporated
MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS
DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR
PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Xi‘an Ascend Semiconductor
Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections
or other changes without further notice to this document and any product described herein.
Xi‘an Ascend Semiconductor
Incorporated does not
assume any liability arising out of the application or use of this document or any product described herein; neither does
Xi‘an Ascend
Semiconductor
Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this
all risks of such use and will agree to hold
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Incorporated and all the companies whose products are represented on
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Ascend Semiconductor
Incorporated website, harmless against all damages.
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1.0
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