ASDsemi-ASDM2301ZA-SOT23
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ASDM
2
301
2
0V P-C
HA
NNE
L
MOSFET
Product Summary
Features
●
High Power and current handing capability
●
Lead free product is acquired
●
Surface Mount Package
V
DS
R
D
S
(
O N)
R
D
S
(
O N)
I
D
(Typ)
(Typ)
@
@
-4.5V
-2.5V
-20V
6
5
m
Ω
8
3
m
Ω
-3
A
Application
●
PWM applications
●
Load switch
●
Power management
top view
D
G
SOT-23
Absolute Maximum Ratings (T
A
=25
℃
unless otherwise noted)
Parameter Symbol
V
DS
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
-20
V
V
±1
0
V
GS
I
D
-3
A
Drain Current -Pulsed (Note 1)
-10
1
A
I
DM
Maximum Power Dissipation
W
℃
P
D
Operating Junction and Storage Temperature Range
-55
T
o
1
50
T
J
,T
STG
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note 2)
R
θ
JA
125
℃
/W
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Ascend Semicondutor Co.,Ltd
ASDM
2
301
2
0V P-C
HA
NNE
L
MOSFET
Electrical Characteristics (TA=25
℃
unless otherwise noted)
Parameter
Symbol
Condition
Min Typ
Max
Unit
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
On Characteristics (Note 3)
Gate Threshold Voltage
BV
DSS
I
DSS
V
GS
=0V I
D
=-250
μ
A
-20
–
V
V
DS
=-20V,V
GS
=0V
–
–
–
–
-1
μ
A
nA
I
GSS
V
GS
=
-10
V,V
DS
=0V
–
100
V
GS(th)
R
DS(ON)
g
FS
V
DS
=V
GS
,I
D
=-250
μ
A
V
GS
=-4.5V, I
D
=-3A
V
GS
=-2.5V, I
D
=-2A
V
DS
=-5V,I
D
=-2.8A
-0.4
-0.
65
6
5
-1
85
V
m
Ω
m
Ω
S
–
–
–
Drain-Source On-State Resistance
1
2
0
8
3
Forward Transconductance
Dynamic Characteristics (Note4)
Input Capacitance
9.5
–
C
lss
C
oss
C
rss
–
–
–
405
75
–
–
–
PF
PF
PF
V
DS
=-10V,V
GS
=0V,
F=1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics (Note 4)
Turn-on Delay Time
55
t
d(on)
t
r
t
d(off)
t
f
–
–
–
–
–
–
–
11
35
–
–
nS
nS
nS
nS
nC
nC
nC
Turn-on Rise Time
V
DD
=-10V,I
D
=-1A
V
GS
=-4.5V,R
GEN
=10
Ω
Turn-Off Delay Time
30
–
Turn-Off Fall Time
10
–
Total Gate Charge
Q
g
Q
gs
Q
gd
3.3
0.7
1.3
12
–
V
DS
=-10V,I
D
=-3A,
Gate-Source Charge
V
GS
=-2.5V
Gate-Drain Charge
–
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
Diode Forward Current (Note 2)
V
SD
I
S
V
GS
=0V,I
S
=1.3A
–
–
–
–
-1.2
-1.3
V
A
Notes:
1.
Repetitive Rating: Pulse width limited by maximum junction temperature.
2.
Surface Mounted on FR4 Board, t
≤
10 sec.
3.
Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%.
4.
Guaranteed by design, not subject to production
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Ascend Semicondutor Co.,Ltd
ASDM
2
301
2
0V P-C
HA
NNE
L
MOSFET
ELECTRICAL AND THERMAL CHARACTERISTICS
t
on
t
off
t
f
t
r
t
d(on)
V
OUT
V
IN
t
d(off)
90%
90%
INVERTED
10%
90%
10%
50%
50%
10%
PULSE WIDTH
Figure 1:Switching Test Circuit
Figure 2:Switching Waveforms
T
J
-Junction
T
e
mperature(
℃
)
T
J
-Junction
T
e
mperature(
℃
)
Figure 3 Power Dissipation
Figure 4 Drain Current
Vds Drain-Source Voltage (V)
I
D
– Drain Current (A)
Figure 5 Output CHARACTERISTICS
Figure 6 Drain-Source On-Resistance
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Ascend Semicondutor Co.,Ltd
ASDM
2
301
2
0V P-C
HA
NNE
L
MOSFET
T
J
-Junction
T
e
mperature(
℃
)
Vgs Gate-Source Voltage (V)
Figure 8 Drain-Source On-Resistance
Figure 7 Transfer Characteristics
Vds Drain-Source Voltage (V)
Vgs Gate-Source Voltage (V)
Figure 10 Capacitance vs Vds
Figure 9 Rdson vs Vgs
Qg Gate Charge (nC)
Vsd Source-Drain Voltage (V)
Figure 11 Gate Charge
Figure 12 Source- Drain Diode Forward
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Ascend Semicondutor Co.,Ltd
ASDM
2
301
2
0V P-C
HA
NNE
L
MOSFET
Vds Drain-Source Voltage (V)
Figure 13
Safe Operation Area
Square Wave Pluse Duration(sec)
Figure 14 Normalized Maximum Transient Thermal Impedance
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Ascend Semicondutor Co.,Ltd
ASDM
2
301
2
0V P-C
HA
NNE
L
MOSFET
Ordering and Marking Information
Device
Marking
Package
Packing
Quantity
ASDM2301ZA
SO
T23
Tape&Reel
3
000/Reel
MARKING
PACKAGE
A1SHB
SO
T23
Ordering Number
Halogen Free
Package
SOT23
Lead Free
ASDM2301
–
ZA-R
ASDM2301
G-
ZA
–
R
1 R:Tape
Reel
ASDM2301G-ZA -R
2 ZA:
SOT23
3 blank
: Lead Free
G:Halogen Free
1 Packing Type
2
Package Type
3
Green Package
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Ascend Semicondutor Co.,Ltd
ASDM
2
301
2
0V P-C
HA
NNE
L
MOSFET
Dimensions in Millimeters
Dimensions in Inches
Symbol
Min
0.90
0.00
0.90
0.30
0.08
2.80
1.20
Max
1.15
0.10
1.05
0.55
0.15
3.00
1.40
Min
0.035
0.000
0.035
0.012
0.003
0.110
0.047
Max
0.045
0.004
0.041
0.022
0.006
0.118
0.055
A
A1
A2
b
C
D
E
0.95 TYP
0.037 T
Y
P
e
e1
H
1.80
2.25
0.30
2.00
2.55
0.50
0.071
0.089
0.012
0.079
0.100
0.020
L
θ
0
8
0
8
∘
∘
∘
∘
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Ascend Semicondutor Co.,Ltd
ASDM
2
301
2
0V P-C
HA
NNE
L
MOSFET
IMPORTANT NOTICE
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incorporated
MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS
DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR
PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
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Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections
or other changes without further notice to this document and any product described herein.
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Incorporated does not
assume any liability arising out of the application or use of this document or any product described herein; neither does
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Semiconductor
Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this
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