ASDsemi-ASDM3010S-R

Part #ASDsemi-ASDM3010S-R
Download 
ASDsemi-ASDM3010S-R
ASDM
30
1
0
S
 
30V Dual N-Channel MOSFET  
Features  
Product Summary  
•
Dual N-Channel,5V Logic Level Control  
•
Enhancement mode  
•
Fast Switching  
V
DS  
3
0
 
1
5.5  
9
V
m
Ω
 
A
•
High Effective  
R
DS(on),TYP
@
V
GS
=10 V  
I
D  
Application  
•
Power Management in Inverter System  
•
Synchronous Rectification  
top view  
ASCEND  
SOP-8  
Maximum ratings, at
T
j
=25 °C, unless otherwise specified  
Symbol  
Parameter  
Rating  
30  
Unit  
Drain-Source breakdown voltage  
V
A
V
(BR)DSS  
=25°C  
I

S  

T

A  

Diode continuous forward current  
2.3  
=25°C  
T

A  

T

A  

9
A
A
I

D  

Continuous drain current @V
GS
=10V  
=
7
0°C  
5.
0  
=25°C  
=25°C  
I

DM  

T

A  

Pulse drain current tested
 
①
 
Avalanche energy, single pulsed
 
②  
Maximum power dissipation  
Gate-Source voltage  
3
0  
9
A
mJ  
W
V
EAS  
P
T

A  

2
.5  
D
V
GS  
MSL  
T

STG  

±20  
Level 3  
-55 to 150  
Storage temperature range  
°C  
Thermal Characteristics  
Symbol  
Parameter  
Typical  
40  
Unit  
°C/W  
R

θJL  

R

θ
JA  

Thermal Resistance-Junction to Lead  
50  
Thermal Resistance-Junction to Ambient  
°C/W  
Ascend Semicondutor Co.,Ltd  
NOV 201
9
Version
2
.1  
1/
7
 

ASDM
30
1
0
S
 
30V Dual N-Channel MOSFET  
15.5  
21.5  
1.5  
685  
95  
75  
5.6  
Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%  
Ascend Semicondutor Co.,Ltd  
NOV 201
9
Version
2
.1  
2
/
7  

ASDM
30
1
0
S  
30V Dual N-Channel MOSFET  
Ascend Semicondutor Co.,Ltd  
NOV 201
9
Version
2
.1  
3
/
7  

ASDM
30
1
0
S
 
30V Dual N-Channel MOSFET  
Ascend Semicondutor Co.,Ltd  
NOV 201
9
Version
2
.1  
4
/
7  

ASDM
30
1
0
S  
30V Dual N-Channel MOSFET  
Ordering and Marking Information  
Ordering Device No.  
Package  
Packing  
Quantity  
ASDM30
1
0S-R  
30
1
0  
SOP-8  
Tape&Reel  
4000  
MARKING  
PACKAGE  
S
O
P
–
8  
30
1
0  
Ascend Semicondutor Co.,Ltd  
NOV 201
9
Version
2
.1  
5
/
7  

ASDM
30
1
0
S  
30V Dual N-Channel MOSFET  
SOP-8 PACKAGE IN FORMATION  
Ascend Semicondutor Co.,Ltd  
NOV 201
9
Version
2
.1  
6
/
7  

ASDM
30
1
0
S  
30V Dual N-Channel MOSFET  
IMPORTANT NOTICE  
Xi‘an Ascend Semiconductor
incorporated
MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS  
DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR  
PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).  
Xi‘an Ascend Semiconductor
Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections  
or other changes without further notice to this document and any product described herein.
Xi‘an Ascend Semiconductor
Incorporated does not  
assume any liability arising out of the application or use of this document or any product described herein; neither does
Xi‘an Ascend  
Semiconductor
Incorporated convey

under its patent or trademark rights, nor the rights of others. Any Customer or user of this  
all risks of such use and will agree to hold
Ascendsemi
Incorporated and all the companies whose products are represented on
Xi‘an  
Ascend Semiconductor
Incorporated website, harmless against all damages.  
Xi‘an Ascend Semiconductor
Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through  
unauthorized sales channel. Should Customers purchase or use
Xi‘an Ascend Semiconductor
Incorporated products for any unintended or  
unauthorized application, Customers shall indemnify and hold
Xi‘an Ascend Semiconductor
Incorporated and its representatives harmless against  
all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such  
unintended or unauthorized application.  
www.
ascendsemi
.com  
Ascend Semicondutor Co.,Ltd  
NOV 201
9
Version
2
.1  
7
/
7