ASDsemi-ASDM3010S-R
| Part # | ASDsemi-ASDM3010S-R |
| Download | ASDsemi-ASDM3010S-R |
ASDM
30
1
0
S
30V Dual N-Channel MOSFET
Features
Product Summary
•
Dual N-Channel,5V Logic Level Control
•
Enhancement mode
•
Fast Switching
V
DS
3
0
1
5.5
9
V
m
Ω
A
•
High Effective
R
DS(on),TYP
@
V
GS
=10 V
I
D
Application
•
Power Management in Inverter System
•
Synchronous Rectification
top view
ASCEND
SOP-8
Maximum ratings, at
T
j
=25 °C, unless otherwise specified
Symbol
Parameter
Rating
30
Unit
Drain-Source breakdown voltage
V
A
V
(BR)DSS
=25°C
I
S
T
A
Diode continuous forward current
2.3
=25°C
T
A
T
A
9
A
A
I
D
Continuous drain current @V
GS
=10V
=
7
0°C
5.
0
=25°C
=25°C
I
DM
T
A
Pulse drain current tested
①
Avalanche energy, single pulsed
②
Maximum power dissipation
Gate-Source voltage
3
0
9
A
mJ
W
V
EAS
P
T
A
2
.5
D
V
GS
MSL
T
STG
±20
Level 3
-55 to 150
Storage temperature range
°C
Thermal Characteristics
Symbol
Parameter
Typical
40
Unit
°C/W
R
θJL
R
θ
JA
Thermal Resistance-Junction to Lead
50
Thermal Resistance-Junction to Ambient
°C/W
Ascend Semicondutor Co.,Ltd
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9
Version
2
.1
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7
ASDM
30
1
0
S
30V Dual N-Channel MOSFET
15.5
21.5
1.5
685
95
75
5.6
Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%
Ascend Semicondutor Co.,Ltd
NOV 201
9
Version
2
.1
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/
7
ASDM
30
1
0
S
30V Dual N-Channel MOSFET
Ascend Semicondutor Co.,Ltd
NOV 201
9
Version
2
.1
3
/
7
ASDM
30
1
0
S
30V Dual N-Channel MOSFET
Ascend Semicondutor Co.,Ltd
NOV 201
9
Version
2
.1
4
/
7
ASDM
30
1
0
S
30V Dual N-Channel MOSFET
Ordering and Marking Information
Ordering Device No.
Package
Packing
Quantity
ASDM30
1
0S-R
30
1
0
SOP-8
Tape&Reel
4000
MARKING
PACKAGE
S
O
P
–
8
30
1
0
Ascend Semicondutor Co.,Ltd
NOV 201
9
Version
2
.1
5
/
7
ASDM
30
1
0
S
30V Dual N-Channel MOSFET
SOP-8 PACKAGE IN FORMATION
Ascend Semicondutor Co.,Ltd
NOV 201
9
Version
2
.1
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7
ASDM
30
1
0
S
30V Dual N-Channel MOSFET
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MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS
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PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
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Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections
or other changes without further notice to this document and any product described herein.
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Incorporated does not
assume any liability arising out of the application or use of this document or any product described herein; neither does
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Semiconductor
Incorporated convey
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under its patent or trademark rights, nor the rights of others. Any Customer or user of this
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