ASDsemi-ASDM30N90KQ-R
| Part # | ASDsemi-ASDM30N90KQ-R |
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ASDM
3
0N
9
0
KQ
3
0V N-Channel
MOSFET
Product Summary
General Features
●
Low Gate Charge
●
A
d
v
anced
T
rench
T
echnology
●
Pro
v
ide E
x
cellent RDS(
O
N)
●
High Power and Current Handling Capability
VDS
30
3
.
6
9
0
V
RDS(on),
T
y
p
.
@ VGS=
10
V
mΩ
ID
A
Application
●
Load Swtich
●
P
WM
appli
c
ation
s
●
Power management
1
TO-252
N-channel
Absolute Maximum Ratings (T
A
=25ºC unless otherwise noted)
Parameter
Symbol
V
DS
Maximum
30
Units
Drain-Source Voltage
Gate-Source Voltage
V
V
V
GS
±
20
T
C
=25ºC
90
46
B
Continuous Drain Current
I
D
A
T
C
=100ºC
A
Pulsed Drain Current
I
DM
I
S
255
90
A
A
Avalanche Current
A
mJ
W
A
Single Pulse Avalanche Energy
L =0.3mH
T
C
=25ºC
E
AS
135
65
C
Power Dissipation
P
D
T
C
=100ºC
32
W
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
T
J
, T
STG
-55 to
175
ºC
Symbol
R
Ɵ
JC
Maximum
2.3
Units
Maximum Junction-to-Case
Steady-State
Steady-State
ºC /W
Maximum Junction-to-Ambient
R
Ɵ
JA
100
FEB
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Ascend Semicondutor
ASDM
3
0N
9
0
KQ
3
0V N-Channel
MOSFET
Electrical Characteristics(T
J
=25ºC unless otherwise noted)
Value
Units
Symbol
Parameter
Conditions
Min
Typ
Max
STATIC PARAMETERS
BV
DSS
Drain-Source Breakdown Voltage
I
D
=250µA,V
GS
=0V
30
—
—
—
—
1
V
T
J
=25ºC
I
DSS
Zero Gate Voltage Drain Current
V
DS
=30V, V
GS
=0V
μA
T
J
=125ºC
—
—
25
I
GSS
Gate-Body Leakage
Current
Gate Threshold
Voltage
V
DS
=0V, V
GS
=
±
20V
—
—
±
100
2.4
4.5
9.0
—
nA
V
V
GS(th)
V
DS
=V
GS
, I
D
=250µA
V
GS
=10V, I
D
=30A
V
GS
=4.5V, I
D
=30A
V
DS
=10V, I
D
=20A
1
1.6
3.6
6.9
—
—
mΩ
mΩ
S
R
DS(ON)
Static Drain-Source On-Resistance
—
g
FS
V
SD
I
S
Forward Transconductance
16
—
Diode Forward Voltage
I
S
=30A, V
GS
=0V
—
1
V
B
Maximum Body-Diode Continuous Current
—
—
90
A
DYNAMIC PARAMETERS
C
iss
C
oss
C
rss
Input Capacitance
—
—
—
2120
307
—
—
—
Output Capacitance
V
GS
=0V, V
DS
=15V, f =1MH
Z
pF
Reverse Transfer Capacitance
253
SWITCHING PARAMETERS
Q
g
Q
gs
Q
gd
t
D(on)
t
r
Total Gate Charge
—
—
—
—
—
—
—
—
—
40
5.4
9.6
15
32
15
12
23
48
—
—
—
—
—
—
—
—
—
Gate Source Charge
V
GS
=10V,V
DS
=15V, I
D
=30A
nC
ns
Gate Drain Charge
Turn-On Delay Time
Turn-On Rise Time
V
GS
=10V,V
DS
=15
V
,
I
D
=20A,
R
G
=3
Ω
t
D(off)
t
f
Turn-Off Delay Time
Turn-Off Fall Time
t
rr
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
I
F
=30A, di/dt =100A/μs
Q
rr
nC
A. Single
pulse width limited by maximum junction temperature.
B. The
maximum current rating is package limited.
C. The power dissipation P
D
is based on T
J(MAX)
=175ºC , using junction-to-case thermal resistance, and is more useful in setting
the upper dissipation limit for cases where additional heatsinking is used.
FEB
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Ascend Semicondutor Co.,Ltd
ASDM
3
0N
9
0
KQ
3
0V N-Channel
MOSFET
Typical Characteristics
T
J
= 25
º
C, unless otherwise noted
120
100
80
60
40
20
0
120
100
80
60
40
20
0
10V
8V
6V
4.5V
4V
3.5V
V
DS
= 15V
T
J
= 125ºC
T
J
= 25ºC
0
1
2
3
4
5
0
1
2
3
4
5
6
V
DS
(Volts)
V
GS
(Volts)
Figure 1: On-Region Characteristics
Figure 2: Transfer Characteristics
10000
10
9
T
J
= 25ºC
8
C
iss
1000
100
10
7
V
GS
= 4.5V
C
oss
C
rss
6
5
V
GS
= 10V
4
V
GS
= 0
f = 1MHz
3
2
0
5
10
15
20
25
30
0
5
10
15
20
25
30
I
D
(A)
V
DS
(Volts)
Figure 3: On-Resistance vs. Drain Current
Figure 4: Capacitance Characteristics
12
10
8
100
V
DD
= 15V
T
J
= 125
º
C
10
1
6
T
J
= 25
º
C
4
2
0
0.1
0
10
20
30
40
50
0.2
0.4
0.6
0.8
1
1.2
Q
g
(nC)
Figure 5: Gate Charge Characteristics
V
SD
(Volts)
Figure 6: Body Diode Forward Voltage
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Ascend Semicondutor Co.,Ltd
ASDM
3
0N
9
0
KQ
3
0V N-Channel
MOSFET
Typical Characteristics
T
J
= 25
º
C, unless otherwise noted
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
V
GS
= 10V
I
D
= 30A
I
D
= 250µA
-50 -25
0
25
50
75
100 125 150
-50
-25
0
25
50
75
100 125 150
Temperature(ºC)
Temperature(ºC)
Figure 7: On-Resistance vs. Junction Temperature
Figure 8: Vgs(th)
vs. Junction Temperature
1.15
20
18
16
14
12
10
8
V
GS
= 0
I
D
= 250uA
V
GS
= 10V
I
D
= 30A
1.10
1.05
1.00
0.95
0.90
T
J
= 125
º
C
6
4
2
T
J
= 25
º
C
0
-50 -25
0
25
50
75
100 125 150
2
3
4
5
6
7
8
9
10
T
J
, Junction Temperature (
º
C)
Figure 9: BV
DSS
vs. Junction Temperature
V
GS
, Gate-to-Source Voltage (V)
Figure 10: On-Resistance vs. Gate-Source Voltage
1000
10
R
DS(on)
limited
100
10
1
1
D = 0.5
D = 0.2
t
p
= 10us
t
p
= 100us
t
p
= 1ms
t
p
= 10ms
DC
D = 0.1
0.1
D = 0.05
D = 0.02
D = 0.01
Single Pulse
0.1
0.01
0.1
1
10
100
1000
1E-05
0.0001
0.001
0.01
0.1
1
Pulse Width (s)
V
DS
(Volts)
Figure 11: Normalized Transient
Thermal Resistance
Figure 12: Safe Operating Area
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Version2.0
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Ascend Semicondutor Co.,Ltd
ASDM
3
0N
9
0
KQ
3
0V N-Channel
MOSFET
Figure1:Gate Charge Test Circuit & Waveform
Figure 2: Resistive Switching Test Circuit & Waveforms
Figure 3:Unclamped Inductive Switching Test Circuit & Waveforms
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Version2.0
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Ascend Semicondutor Co.,Ltd
ASDM
3
0N
9
0
KQ
3
0V N-Channel
MOSFET
Figure 4:Peak Diode Recovery dv/dt Test Circuit & Waveforms (For N-channel)
FEB
201
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Version2.0
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Ascend Semicondutor Co.,Ltd
ASDM
3
0N
9
0
KQ
3
0V N-Channel
MOSFET
Ordering and Marking Information
Ordering Device No.
Marking
Package
Packing
Quantity
ASDM30N90
KQ
-R
30N90
TO-2
5
2
Tape&Reel
2
5
00
/
Reel
MARKING
PACKAGE
TO
–
2
5
2
3
0N
9
0
FEB
201
9
Version2.0
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Ascend Semicondutor Co.,Ltd
ASDM
3
0N
9
0
KQ
3
0V N-Channel
MOSFET
TO-
252
PACKAGE IN FORMATION
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FEB
201
9
Version2.0
8
/
9
Ascend Semicondutor Co.,Ltd
ASDM
3
0N
9
0
KQ
3
0V N-Channel
MOSFET
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