ASDsemi-ASDM3400ZA-SOT23
| Part # | ASDsemi-ASDM3400ZA-SOT23 |
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ASDM
3
4
00
30V N-C
HA
NNE
L
MOSFET
Product Summary
FEATURES
V
DS
=
30
V, I
D
=
5
A
R
DS(ON)
<
52
m
Ω
@
V
GS
=
2
.
5
V
R
DS(ON)
<
3
6
m
Ω
@ =
4
.
5
V
R
DS
(ON)
(
Max
)
R
DS
(ON)
I
D
V
DS
R
DS
(ON)
(
Max
)
@
@
10V
2.5V
(
Max
)
@
4.5V
V
GS
36mΩ
30V
52mΩ
35mΩ
5A
R
DS(ON)
<
35
m
Ω
@
V
=
10
V
GS
High Power and current handing capability
Lead free product is acquired
Surface Mount Package
Available in SOT23 Package
APPLICATIONS
top view
D
PWM applications
Load switch
Power management
G
S
SOT23
Absolute Maximum Ratings
T
A
=25
°
C
u
nless otherwise noted
Parameter
Symbol
V
DS
Maximum
Units
Drain-Source Voltage
Gate-Source Voltage
30
±12
V
V
V
GS
T
A
=25
°
C
T
A
=70
°
C
5
Continuous Drain
Current
I
D
3
.9
A
Pulsed Drain Current
C
I
DM
P
D
30
T
A
=25
°
C
T
A
=70
°
C
1.4
W
°C
Power Dissipation
B
0.9
Junction and Storage Temperature Range
T
J
, T
STG
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
70
Max
90
Units
°
C
/W
°
C
/W
°
C
/W
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A D
Maximum Junction-to-Lead
t
≤
10s
R
θ
JA
Steady-State
Steady-State
100
63
125
80
R
θ
JL
NOV 2018 Version
1.0
1
/
8
Ascend Semicondutor Co.,Ltd
ASDM
3
4
00
30V N-C
HA
NNE
L
MOSFET
Electrical Characteristics (T
J
=25
°
C
u
nless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
I
D
=250
µ
A, V
GS
=0V
V
DS
=
24
V, V
GS
=0V
BV
DSS
Drain-Source Breakdown Voltage
30
V
1
I
DSS
Zero Gate Voltage Drain Current
µ
A
5
T
J
=55
°
C
V
DS
=0V, V
GS
= ±12V
I
GSS
Gate Threshold Voltage
On state drain current
100
nA
V
V
GS(th)
I
D(ON)
V
DS
=V
GS
I
D
=250
µ
A
V
GS
=4.5V, V
DS
=5V
V
GS
=10V, I
D
=5A
0.
6
1.
1
1.
5
30
A
29
3
5
39
3
6
52
m
Ω
T
J
=125
°
C
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
=4.5V, I
D
=5A
V
GS
=2.5V, I
D
=4A
V
DS
=5V, I
D
=5A
I
S
=1A,V
GS
=0V
32
40
m
Ω
m
Ω
S
g
FS
V
SD
I
S
Forward Transconductance
Diode Forward Voltage
15
0.7
7
1
2
V
Maximum Body-Diode Continuous Current
A
DYNAMIC PARAMETERS
C
iss
C
oss
C
rss
R
g
Input Capacitance
823
99
77
4
pF
pF
pF
Ω
V
GS
=0V, V
DS
=15V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
V
GS
=0V, V
DS
=0V, f=1MHz
2
6
SWITCHING PARAMETERS
t
D(on)
t
r
t
D(off)
t
f
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
3
.3
4.8
ns
ns
ns
ns
V
GS
=10V, V
DS
=15V, R
L
=2.6
Ω
,
R
GEN
=3
Ω
2
6.3
4
.1
A. The value of R
θ
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25
°
C. The
value in any given application depends on the user’s specific board design.
B. The power dissipation P
D
is based on T
J(MAX)
=150
°
C, using
≤
10s junction-to-ambient thermal resistance.
C. Repetitive
rating, pulse width limited by junction temperature T
J(MAX)
=150
°
C. Ratings are based on low frequency and duty cycles to keep
initialT
J
=25
°
C.
D. The R
θ
JA
is the sum of the thermal impedence from junction to lead R
θ
JL
and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300
µ
s pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in
2
FR-4 board with
2oz. Copper, assuming a maximum junction temperature of T
J(MAX)
=150
°
C. The SOA curve provides a single pulse rating.
2
/
8
NOV 2018 Version
1.0
Ascend Semicondutor Co.,Ltd
ASDM
3
4
00
30V N-C
HA
NNE
L
MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
Fig 1: On-Region Characteristics (Note E)
Figure 2: TransferCharacteristics (Note E)
4
0
1.8
1.6
1.4
1.2
1
V
GS
=4.5V
Id=5A
V
GS
=4.5V
30
V
GS
=10V
20
10
=10
V
V
GS
Id=5.8
A
0.8
0
25
50
75
100
125
150
175
0
5
10
I
D
(A)
15
20
18
Temperature (
°
C
)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
50
40
30
20
10
1.0E+01
I
D
=5.8A
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
125
°
C
125
°
C
25
°
C
25
°
C
0.0
0.2
0.4
0.6
0.8
1.0
0
2
4
6
8
10
V
GS
(Volts)
V
SD
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Figure 6: Body-Diode Characteristics (Note E)
3
/
8
NOV 2018 Version
1.0
Ascend Semicondutor Co.,Ltd
ASDM
3
4
00
30V N-C
HA
NNE
L
MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5
4
3
2
1
0
1000
V
DS
=15V
I
D
=5.8A
800
600
400
200
0
C
iss
C
oss
C
rss
0
2
4
6
8
0
5
10
15
20
25
30
Q
g
(nC)
V
DS
(Volts)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
1000
100
10
100.0
10.0
1.0
T
A
=25
°
C
10
µ
s
R
DS(ON)
limited
100
µ
s
1ms
10ms
0.1
T
J(Max)
=150
°
C
10s
T
A
=25
°
C
DC
1
0.0
0.00001
0.001
0.1
10
1000
0.01
0.1
1
10
100
V
DS
(Volts)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
D=T
on
/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
J,PK
=T
A
+P
DM
.Z
θ
JA
.R
θ
JA
1
0.1
R
θ
JA
=125
°
C/W
P
D
0.01
0.001
Single Pulse
0.001
T
on
T
0.00001
0.0001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
NOV 2018 Version
1.0
4
/
8
Ascend Semicondutor Co.,Ltd
ASDM
3
4
00
30V N-C
HA
NNE
L
MOSFET
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
VDC
+
Qgs
Qgd
Vds
VDC
–
–
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & W
aveforms
RL
Vds
Vds
90%
10%
+
DUT
Vdd
Vgs
VDC
Rg
–
Vgs
Vgs
t
d
(on)
t
r
t
d
(off)
t
f
t
o
n
t
o
ff
D
i
ode Recovery Test Circuit & Waveforms
Q
rr
= –
Idt
Vds +
DUT
Vgs
t
rr
Vds –
L
Isd
I
F
Isd
Vgs
dI/dt
I
R
M
+
Vdd
VDC
Vdd
–
Vds
Ig
5
/
8
NOV 2018 Version
1.0
Ascend Semicondutor Co.,Ltd
ASDM
3
4
00
30V N-C
HA
NNE
L
MOSFET
Ordering and Marking Information
Device
Marking
Package
Packaging
Quantity
Reel Size
Tape width
ASDM
340
0
Z
A
Tape&Reel
SO
T23
340
0
3
000/Reel
–
–
MARKING
PACKAGE
340
0
SO
T23
Ordering Number
Package
Lead Free
Halogen Free
SO
T23
ASDM
340
0
–
Z
A
-R
ASDM
340
0
G
–
Z
A
–
R
1 T:Tube,R:Tape
Reel
ASDM
340
0
G
–
Z
A
–
R
2
Z
A
:
SO
T23
1 Packing Type
2 Package Type
3 Green Package
3 blank
: Lead Free
G:Halogen Free and Lead Free
NOV 2018 Version
1.0
6
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8
Ascend Semicondutor Co.,Ltd
ASDM
3
4
00
30V N-C
HA
NNE
L
MOSFET
SOT23
Dimensions in Millimeters
Dimensions in Inches
Symbol
Min
0.90
0.00
0.90
0.30
0.08
2.80
1.20
Max
1.15
0.10
1.05
0.55
0.15
3.00
1.40
Min
0.035
0.000
0.035
0.012
0.003
0.110
0.047
Max
0.045
0.004
0.041
0.022
0.006
0.118
0.055
A
A1
A2
b
C
D
E
0.95 TYP
0.037 T
Y
P
e
e1
H
1.80
2.25
0.30
2.00
2.55
0.50
0.071
0.089
0.012
0.079
0.100
0.020
L
θ
0
8
0
8
∘
∘
∘
∘
NOV 2018 Version
1.0
7
/
8
Ascend Semicondutor Co.,Ltd
ASDM
3
4
00
30V N-C
HA
NNE
L
MOSFET
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