ASDsemi-ASDM40N52E-R
| Part # | ASDsemi-ASDM40N52E-R |
Download  | ASDsemi-ASDM40N52E-R |
ASDM
4
0N
52
4
0V N-Channel
MOSFET
General Features
Product Summary
●
Low On-Resistance
V
DSS
40
V
mΩ
A
●
100% avalanche tested
●
Fast Switching Speed
4
.2
R
DS(ON)-
Typ
I
D
52
●
Excellent package for good heat dissipation
Application
●
DC/DC Converters
●
On board power for server
●
Synchronous rectification
Pin1
Absolute Maximum Ratings
(T
C
=25
℃
unless otherwise specified)
Symbol
Parameter
Drain-Source Voltage
Max.
Units
V
DSS
V
GSS
40
±20
52
V
V
Gate-Source Voltage
T
C
= 25
℃
A
I
D
Continuous Drain Current
Pulsed Drain Current
note1
Single Pulsed Avalanche Energy
note2
T
C
= 100
℃
35
A
I
DM
EAS
P
D
220
100
A
mJ
W
℃
/W
℃
Power Dissipation
T
C
= 25
℃
65
1.92
Thermal Resistance, Junction to Case
R
θJC
T
J
, T
STG
Operating and Storage
T
e
mperature Range
-55 to +150
Ascend Semicondutor Co.,Ltd
DEC 2018 Version1.0
1/
8
ASDM
4
0N
52
4
0V N-Channel
MOSFET
Electrical Characteristics
(T
C
=25°C Unless Otherwise Noted)
ASDM40N
52
Symbol
Parameter
Test Condition
Unit
Min.
Typ.
Max.
Static Characteristics
V
GS
=0V, I
DS
=250µA
V
DS
=40V, V
GS
=0V
BV
DSS
Drain-Source Breakdown Voltage
40
45
V
1
30
I
DSS
Zero Gate Voltage Drain Current
µA
T
J
=125°C
V
DS
=V
GS
, I
DS
=250µA
V
GS
=±20V, V
DS
=0V
V
GS
=4.5V, I
DS
=20A
V
GS
=10V, I
DS
=30A
V
GS(th)
I
GSS
1.6
Gate Threshold Voltage
Gate Leakage Current
1
2.5
±100
10
V
nA
6.5
4.2
m
Ω
m
Ω
①
R
DS(ON)
Drain-Source On-state Resistance
5.5
Diode Characteristics
①
I
SD
=26A, V
GS
=0V
Diode Forward Voltage
1.2
V
ns
V
SD
t
rr
Reverse Recovery Time
14
32
I
SD
=26A, dl
SD
/dt=100A/µs
Q
rr
Reverse Recovery Charge
nC
②
Dynamic Characteristics
V
GS
=0V,V
DS
=0V,F=1MHz
R
G
C
iss
C
oss
C
rss
t
d(ON)
t
r
Gate Resistance
1.2
980
160
80
6
Ω
V
GS
=0V,
V
DS
=20V,
Frequency=1.0MHz
Input Capacitance
pF
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
10
24
5
V
DD
=20V,I
DS
=26A,
V
GS
=10V,R
G
=4.7
Ω
ns
t
d(OFF)
t
f
Turn-off Fall Time
②
Gate Charge Characteristics
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
23
18
V
DS
=32V, V
GS
=10V,
I
DS
=26A
nC
2.5
5
Notes:
①
Pulse test;Pulse width≤300µs, duty cycle≤2%.
②Guaranteed by design, not subject to production testing.
Ascend Semicondutor Co.,Ltd
DEC 2018 Version1.0
2/
8
ASDM
4
0N
52
4
0V N-Channel
MOSFET
Test Circuit
Figure1:Gate Charge Test Circuit & Waveform
Figure 2: Resistive Switching Test Circuit & Waveforms
Figure 3:Unclamped Inductive Switching Test Circuit & Waveforms
Ascend Semicondutor Co.,Ltd
DEC 2018 Version1.0
3/
8
ASDM
4
0N
52
4
0V N-Channel
MOSFET
Typical Electrical and Thermal Characteristics (Curves)
Drain-Source On Resistance
10
8
4.5V
6
4
10V
2
0
0
20
40
60
80
100
V
DS
– Drain-Source Voltage (V)
I
D
– Drain Current (A)
Drain-Source On Resistance
Source-Drain Diode Forward
2.5
2.0
1.5
1.0
0.5
0.0
100
10
1
V
GS
=10V
I
DS
=26A
T
J
=150°C
T
J
=25°C
T
J
=25°C
Rds(on)=3.5m
Ω
0.1
0.2
0.4
0.6
0.8
1
1.2
1.4
-50
-25
0
25
50
75
100 125 150
V
SD
– Source-Drain Voltage (V)
T
J
– Junction Temperature (
°
C)
Capacitance
Gate Charge
2500
2000
1500
1000
500
10
VDS=24V
IDS=26A
9
8
7
6
5
4
3
2
1
0
Ciss
Coss
Crss
0
1
10
100
0
10
20
30
Q
G
– Gate Charge (nC)
V
DS
– Drain-Source Voltage (V)
Ascend Semicondutor Co.,Ltd
DEC 2018 Version1.0
4
/
8
ASDM
4
0N
52
4
0V N-Channel
MOSFET
Power Dissipation
Drain Current
70
60
50
40
30
20
10
0
90
80
70
60
50
40
30
20
10
0
VGS=10V
50
0
25
50
75
100
125
150
25
75
100
125
150
T
J
– Junction Temperature (
°
C)
T
J
– Junction Temperature (
°
C)
Drain Current
10
8
Safe Operation Area
1000
Ids=26A
100
10
1
10µs
100µs
1ms
10ms
6
DC
4
2
T
C
=25°C
0
0.1
0
1
2
3
7
8
10
0.01
0.1
1
10
100
1000
V
GS
– Gate-Source Voltage (V)
V
DS
– Drain-Source Voltage (V)
Thermal Transient Impedance
10
1
Duty=0.5, 0.2, 0.1, 0.05, 0.02, 0.01, Single Pulse
0.1
0.01
Single Pulse
R
θ
JC
=1.92
°C/W
0.001
1E-05
0.0001
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (sec)
Ascend Semicondutor Co.,Ltd
DEC 2018 Version1.0
5
/
8
ASDM
4
0N
52
4
0V N-Channel
MOSFET
Ordering and Marking Information
Packing
Quantity
Ordering Device No.
ASDM40N52E-R
Package
Marking
40N52
Tape&Reel
4000/Reel
DFN3.3×3.3
MARKING
PACKAGE
DF
N-3
.
3
x
3
.
3
4
0N52
Ascend Semicondutor Co.,Ltd
DEC 2018 Version1.0
6
/
8
ASDM
4
0N
52
4
0V N-Channel
MOSFET
D
i
men
si
on
s(
DFN3
×
3
)
Ascend Semicondutor Co.,Ltd
DEC 2018 Version1.0
7
/
8
ASDM
4
0N
52
4
0V N-Channel
MOSFET
IMPORTANT NOTICE
Xi‘an Ascend Semiconductor
incorporated
MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS
DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR
PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Xi‘an Ascend Semiconductor
Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections
or other changes without further notice to this document and any product described herein.
Xi‘an Ascend Semiconductor
Incorporated does not
assume any liability arising out of the application or use of this document or any product described herein; neither does
Xi‘an Ascend
Semiconductor
Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this
document or products described herein in such applications shall assume
.
all risks of such use and will agree to hold
Ascendsemi
Incorporated and all the companies whose products are represented on
Xi‘an
Ascend Semiconductor
Incorporated website, harmless against all damages.
Xi‘an Ascend Semiconductor
Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through
unauthorized sales channel. Should Customers purchase or use
Xi‘an Ascend Semiconductor
Incorporated products for any unintended or
unauthorized application, Customers shall indemnify and hold
Xi‘an Ascend Semiconductor
Incorporated and its representatives harmless against
all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such
unintended or unauthorized application.
www.
ascendsemi
.com
Ascend Semicondutor Co.,Ltd
DEC 2018 Version1.0
8
/
8
