ASDsemi-ASDM4614S-R
| Part # | ASDsemi-ASDM4614S-R |
Download  | ASDsemi-ASDM4614S-R |
ASDM
4614
S
4
0V N
A
ND P-Channel MOSFET
Features
Product Summary
●
N-Channel
●
High power and current handing capability
●
Lead free product is acquired
●
Surface mount package
BVDSS
ID
RDSON
.
Typ
@10V
40V
28mΩ
7A
●
P-Channel
Application
●
PWM applications
BVDSS
ID
RDSON
.
Typ
@10V
●
Load switch
-6A
-40V
38mΩ
●
Power management
top view
ASCEND
N-channel
P-channel
SOP-8
Absolute Maximum Ratings (T
A
=25
℃
unless otherwise noted)
Parameter
Symbol
V
DS
N-Channel P-Channel
Unit
Drain-Source Voltage
Gate-Source Voltage
40
-40
V
V
V
GS
±20
±20
7
-6
A
Continuous Drain Current
I
D
I
DM
A
Pulsed Drain Current (Note 1)
2
0
2
–
2
0
2
Maximum Power Dissipation
P
D
W
℃
Operating Junction and Storage Temperature Range
T
J
,T
STG
-55
T
o
1
50
-55
T
o
1
50
Thermal Characteristic
N-Ch
P-Ch
89
90
Thermal Resistance,Junction-to-Ambient (Note2)
R
θJA
℃
/W
NOV 2019 Version1.0
1/12
Ascend Semicondutor Co.,Ltd
ASDM
4614
S
4
0V N
A
ND P-Channel MOSFET
N-CH Electrical Characteristics (T
A
=25
℃
unless otherwise noted)
Parameter
Symbol
Condition
Min Typ
Max
Unit
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
On Characteristics (Note 3)
Gate Threshold Voltage
BV
DSS
I
DSS
V
GS
=0V I
D
=250μA
40
–
1
V
–
–
–
–
μA
nA
VDS=32V,VGS=0V
V
GS
=±20V,V
DS
=0V
I
GSS
±100
V
GS(th)
R
DS(ON
g
FS
V
DS
=V
GS
,I
D
=250μA
V
GS
=10V, I
D
=5A
V
GS
=4.5V, I
D
=4A
V
DS
=5V,I
D
=5A
1
2.5
35
V
mΩ
mΩ
S
–
–
–
28
Drain-Source On-State Resistance
36
15
45
–
Forward Transconductance
Dynamic Characteristics (Note4)
Input Capacitance
C
lss
C
oss
C
rss
–
620
110
70
–
–
–
PF
PF
PF
V
DS
=15V,V
GS
=0V,
F=1.0MHz
Output Capacitance
–
Reverse Transfer Capacitance
–
Switching Characteristics (Note 4)
Turn-on Delay Time
t
d(on)
t
r
t
d(off)
t
f
–
–
–
–
–
–
–
4.5
2.5
–
–
–
–
–
–
–
nS
nS
nS
nS
nC
nC
nC
Turn-on Rise Time
V
DD
=15V, R
L
=3Ω
V
GS
=10V,R
GEN
=3Ω
Turn-Off Delay Time
14.5
3.5
Turn-Off Fall Time
Total Gate Charge
Q
g
Q
gs
Q
gd
5.2
V
DS
=15V,I
D
=5A,
Gate-Source Charge
0.85
1.3
V
GS
=10V
Gate-Drain Charge
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
Diode Forward Current (Note 2)
1.
3
V
SD
I
S
–
–
–
–
V
A
V
GS
=0V,I
S
=
3
A
4
NOV 2019 Version1.0
2/12
Ascend Semicondutor Co.,Ltd
ASDM
4614
S
4
0V N
A
ND P-Channel MOSFET
P-CH Electrical Characteristics (T
A
=25
℃
unless otherwise noted)
Parameter
Symbol
Condition
Min Typ
Max
Unit
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
BV
DSS
I
DSS
V
GS
=0V I
D
=-250μA
-40
–
–
V
V
DS
=-32V , V
GS
=0V
–
–
-1
μA
Gate-Body Leakage Current
On Characteristics (Note 3)
Gate Threshold Voltage
I
GSS
V
GS
=±20V,V
DS
=0V
–
±100
nA
V
GS(th)
R
DS(ON)
g
FS
V
DS
=V
GS
,I
D
=-250μA
V
GS
=-10V, I
D
=-
6
A
V
GS
=-4.5V, I
D
=-
3
A
V
DS
=-5V,I
D
=-4.1A
-1
–
–
2
.5
46
70
–
V
mΩ
mΩ
S
38
4
9
–
Drain-Source On-State Resistance
–
Forward Transconductance
Dynamic Characteristics (Note4)
Input Capacitance
10
C
lss
C
oss
C
rss
–
–
–
980
120
95
–
–
–
PF
PF
PF
V
DS
=-15V,V
GS
=0V,
F=1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics (Note 4)
Turn-on Delay Time
t
d(on)
t
r
t
d(off)
t
f
–
–
–
–
–
–
–
9
5
–
–
–
–
–
–
–
nS
nS
nS
nS
nC
nC
nC
Turn-on Rise Time
V
DD
=-15V,R
L
=3.6Ω
V
GS
=-10V,R
GEN
=3Ω
Turn-Off Delay Time
28
13.5
14
3.1
3.
Turn-Off Fall Time
Total Gate Charge
Q
g
Q
gs
Q
gd
V
DS
=-15V,I
D
=-4A,V
GS
=-10V
V
GS
=0V,I
S
=-1A
Gate-Source Charge
Gate-Drain Charge
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
-1.
3
V
SD
–
–
V
Notes:
1.
Repetitive Rating: Pulse width limited by maximum junction temperature.
2.
Surface Mounted on FR4 Board, t ≤ 10 sec.
3.
Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4.
Guaranteed by design, not subject to production
NOV 2019 Version1.0
3/12
Ascend Semicondutor Co.,Ltd
ASDM
4614
S
4
0V N
A
ND P-Channel MOSFET
N- Channel Typical Electrical and Thermal Characteristics (Curves)
t
on
t
off
t
f
Vdd
Rl
t
r
t
d(on)
V
OUT
V
IN
t
d(off)
Vin
90%
90%
D
Vout
Vgs
INVERTED
Rgen
10%
90%
G
10%
50%
S
50%
10%
PULSE WIDTH
Figure 1:Switching Test Circuit
Figure 2:Switching Waveforms
Vds Drain-Source Voltage (V)
Vgs Gate-Source Voltage (V)
Figure 3 Output Characteristics
Figure 4 Transfer Characteristics
I
D
– Drain Current (A)
T
J
-Junction
T
e
mperature(
℃
)
Figure 5 Drain-Source On-Resistance
Figure 6 Drain-Source On-Resistance
NOV 2019 Version1.0
4/12
Ascend Semicondutor Co.,Ltd
ASDM
4614
S
4
0V N-
A
ND P-Channel MOSFET
Vgs Gate-Source Voltage (V)
T
J
-Junction
T
e
mperature(
℃
)
Figure7 Rdson vs Vgs
Figure 8 Drain-Source On-Resistance
Qg Gate Charge (nC)
Vds Drain-Source Voltage (V)
Figure 9 Gate Charge
Figure 10 Source- Drain Diode Forward
Vds Drain-Source Voltage (V)
Vds Drain-Source Voltage (V)
Figure 11 Capacitance vs Vds
Figure 12
Safe Operation Area
NOV 2019 Version1.0
5/12
Ascend Semicondutor Co.,Ltd
ASDM
4614
S
4
0V N
A
ND P-Channel MOSFET
Square Wave Pluse Duration(sec)
Figure 13 Normalized Maximum Transient Thermal Impedance
NOV 2019 Version1.0
6/12
Ascend Semicondutor Co.,Ltd
ASDM
4614
S
4
0V N-
A
ND P-Channel MOSFET
P-Channel Typical Electrical and Thermal Characteristics
t
on
t
r
t
off
t
f
t
d(on)
V
OUT
V
IN
t
d(off)
90%
90%
INVERTED
10%
90%
10%
50%
50%
10%
PULSE WIDTH
Figure 1:Switching Test Circuit
Figure 2:Switching Waveforms
T
J
-Junction
T
e
mperature(
℃
)
T
J
-Junction
T
e
mperature(
℃
)
Figure 3 Power Dissipation
Figure 4 Drain Current
Vds Drain-Source Voltage (V)
I
D
– Drain Current (A)
Figure 5 Output CHARACTERISTICS
Figure 6 Drain-Source On-Resistance
NOV 2019 Version1.0
7/12
Ascend Semicondutor Co.,Ltd
ASDM
4614
S
4
0V N
A
ND P-Channel MOSFET
Vgs Gate-Source Voltage (V)
T
J
-Junction
T
e
mperature(
℃
)
Figure 7 Transfer Characteristics
Figure 8 Drain-Source On-Resistance
Vgs Gate-Source Voltage (V)
Vds Drain-Source Voltage (V)
Figure 9 Rdson vs Vgs
Figure 10 Capacitance vs Vds
Qg Gate Charge (nC)
Vsd Source-Drain Voltage (V)
Figure 11 Gate Charge
Figure 12 Source- Drain Diode Forward
NOV 2019 Version1.0
8/12
Ascend Semicondutor Co.,Ltd
ASDM
4614
S
4
0V N
A
ND P-Channel MOSFET
Vds Drain-Source Voltage (V)
Figure 13
Safe Operation Area
Square Wave Pluse Duration(sec)
Figure 14 Normalized Maximum Transient Thermal Impedance
NOV 2019 Version1.0
9/12
Ascend Semicondutor Co.,Ltd
ASDM
4614
S
4
0V N
A
ND P-Channel MOSFET
Ordering and Marking Information
Ordering Device No.
Marking
Package
Packing
Quantity
ASDM4
61
4S-R
4
61
4
SOP-8
Tape&Reel
4000
/
Reel
MARKING
PACKAGE
Lot Number
4
6
14
SOP
-8
Date code
NOV 2019 Version1.0
10/12
Ascend Semicondutor Co.,Ltd
ASDM
4614
S
4
0V N
A
ND P-Channel MOSFET
SOP-8 PACKAGE IN FORMATION
NOV 2019 Version1.0
11/12
Ascend Semicondutor Co.,Ltd
ASDM
4614
4
0V N
A
ND P-Channel MOSFET
IMPORTANT NOTICE
Xi‘an Ascend Semiconductor incorporated
MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS
DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR
PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Xi‘an Ascend Semiconductor
Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections
or other changes without further notice to this document and any product described herein.
Xi‘an Ascend Semiconductor
Incorporated does not
assume any liability arising out of the application or use of this document or any product described herein; neither does
Xi‘an Ascend
Semiconductor
Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this
document or products described herein in such applications shall assume
.
all risks of such use and will agree to hold
Ascendsemi
Incorporated and all the companies whose products are represented on
Xi‘an
Ascend Semiconductor
Incorporated website, harmless against all damages.
Xi‘an Ascend Semiconductor
Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through
unauthorized sales channel. Should Customers purchase or use
Xi‘an Ascend Semiconductor
Incorporated products for any unintended or
unauthorized application, Customers shall indemnify and hold
Xi‘an Ascend Semiconductor
Incorporated and its representatives harmless against
all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such
unintended or unauthorized application.
www.
ascendsemi
.com
Ascend Semicondutor Co.,Ltd
NOV 2019 Version1.0
12/12
