ASDsemi-ASDM65N18S-SOP8

ASDM

6

5

N1

8

S  

6

5

V N-C

HA

NNE

L

MOSFET  

Features  

•

Low Input Capacitance  

Product Summary  

•

Low Miller Charge  

V

DS  

V

m

Ω

 

A

6

5  

•

Low on-resistance RDS(on) @ VGS=4.5 V  

•

Low Input/Output Leakage  

•

Pb-free lead plating; RoHS compliant  

•

R

DS(on),

Typ

@

V

GS

=10 V  

7.

0

 

I

D

18  

Application  

•

Motor / Body Load Control  

top view  

ASCEND  

SOP-8  

Absolute Maximum Ratings

(T

A

=25°C unless otherwise noted)  

Parameter  

Value  

Unit  

V

Drain-Source Voltage  

Gate-Source Voltage  

V

DS  

V

GS  

65  

±20  

V

A

T

A

=25°C  

T

A

=70°C  

18  

Drain Current-Continuous  

Drain Current-Pulsed

Note 1  

Maximum Power Dissipation  

Storage Temperature Range  

I

D  

4

0  

65  

2.5  

A

I

DM  

P

D  

A

T

A

=25°C  

T

A

=70°C  

W

W

°C  

°C  

2.0  

T

STG  

T

J  

-55 to +150  

-55 to +150  

Operating Junction Temperature Range  

Thermal Resistance Ratings  

Parameter  

Conditions  

Min.  

Typ.  

Max.  

75  

Unit  

°C/W  

°C/W  

°C/W  

Maximum Junction-to-Ambient  

Maximum Junction-to-Ambient  

Maximum Junction-to-Case  

R

θ  

Steady State  

t

≤

10s  

–

–

–

–

–

–

JA  

R

θ  

JA  

40  

R

θ  

JC  

Steady State  

24  

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ASDM

6

5

N1

8

S  

6

5

V N-C

HA

NNE

L

MOSFET  

Electrical Characteristics

(T

J

=25°C unless otherwise noted)  

OFF CHARACTERISTICS  

Parameter  

Drain-Source Breakdown Voltage  

Zero Gate Voltage Drain Current  

Gate-Body Leakage  

Symbol  

BV

DSS  

I

DSS  

Conditions  

V

GS

=0V, I

DS

=250

μ

A  

V

DS

=48V, V

GS

=0V  

Min.  

65  

–

Typ.  

Max.  

Unit  

V

–

–

–

–

1

μ

A  

nA  

I

GSS  

V

GS

=±20V, V

DS

=0V  

–

±100  

ON CHARACTERISTICS  

Parameter  

Symbol  

V

GS(TH)  

R

DS(ON)  

R

DS(ON)  

gfs  

Conditions  

V

DS

=V

GS

, I

DS

=250

μ

A  

V

GS

=10V, I

DS

=12A  

V

GS

=4.5V, I

DS

=9A  

V

DD

=10V, I

DD

=6A  

Min.  

Typ.  

1.7  

–

Max.  

2.5  

7.5  

9

Unit  

V

Gate Threshold Voltage  

1.2  

–

Drain-Source On-State Resistance  

Drain-Source On-State Resistance  

Forward Transconductance  

m

Ω

 

m

Ω  

S

–

–

–

11  

–

DYNAMIC CHARACTERISTICS  

Parameter  

Symbol  

C

iss  

Conditions  

Min.  

Typ.  

3450  

310  

Max.  

Unit  

Input Capacitance  

–

–

–

–

–

–

Output Capacitance  

C

oss  

V

DS

=30V, V

GS

=0V, f=1MHz  

pF  

115  

Reverse Transfer Capacitance  

C

rss  

SWITCHING CHARACTERISTICS  

Parameter  

Symbol  

T

d(on)  

t

r  

Conditions  

Min.  

Typ.  

28  

32  

98  

68  

75  

19  

26  

1.2  

Max.  

Unit  

Turn-On Delay Time  

Rise Time  

–

–

–

–

–

–

–

–

–

–

–

–

–

–

–

–

V

GS

=10V, V

DS

=30V, R

L

=5

Ω

,  

R

GEN

=3

Ω  

ns  

Turn-Off Delay Time  

Fall Time  

T

d(off)  

t

f  

Total Gate Charge  

Gate to Source Gate Charge  

Gate to Drain “Miller” Charge  

Gate resistance  

Q

g  

Q

gs  

V

GS

=10V, V

DS

=30V, I

D

=10A  

V

DS

=0V, V

GS

=0V, f=1MHz  

nC  

Q

gd  

Rg  

Ω

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS  

Parameter  

Drain-Source Diode Forward Voltage  

Continuous Source Current  

Symbol  

Conditions  

Min.  

Typ.  

–

Max.  

Unit  

V

V

SD  

I

S  

V

GS

=0V, I

S

=1A  

–

–

–

1.3  

–

13  

45  

A

I

F

=12A, dl/dt=500A/

μ

s  

Pulsed Source Current  

I

SM  

–

A

Notes:  

1. Pulse

 

Test: Pulse Width

≤

300

μ

s, Duty Cycle

≤

2%.  

2. R

θ

JA

is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of  

the drain pins. R

θ

is guaranteed by design while R

θ

is determined by the user’s board design. R

θ

JA

shown below for single device operation on FR-4 in still  

JC  

CA  

air.  

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ASDM

6

5

N1

8

S  

6

5

V N-C

HA

NNE

L

MOSFET  

Typical Characteristics  

Power Dissipation  

Drain Current  

T

j

– Junction Temperature (

°

C)  

T

j

– Junction Temperature (

°

C)  

Safe Operation Area  

Thermal Transient Impedance  

V

DS

– Drain-Source Voltage (V)  

Square Wave Pulse Duration (sec)  

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ASDM

6

5

N1

8

S  

6

5

V N-C

HA

NNE

L

MOSFET  

Typical Characteristics  

Output Characteristics  

Drain-Source On Resistance  

V

DS

– Drain-Source Voltage (V)  

Drain-Source On Resistance  

I

D

– Drain Current (A)  

Gate Threshold Voltage  

V

GS

– Gate-Source Voltage (V)  

T

j

– Junction Temperature (°C)  

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NOV 2018 Version1.0  

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ASDM

6

5

N1

8

S  

6

5

V N-C

HA

NNE

L

MOSFET  

Typical Characteristics  

Drain-Source On Resistance  

Source-Drain Diode Forward  

T

j

– Junction Temperature (°C)  

Capacitance  

V

SD

– Source-Drain Voltage (V)  

Gate Charge  

Q

G

– Gate Charge (nC)  

V

DS

– Drain-Source Voltage (V)  

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ASDM

6

5

N1

8

S  

6

5

V N-C

HA

NNE

L

MOSFET  

Avalanche Test Circuit and Waveforms  

Switching Time Test Circuit and Waveforms  

Ascend Semicondutor Co.,Ltd  

NOV 2018 Version1.0  

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ASDM

6

5

N1

8

S  

6

5

V N-C

HA

NNE

L

MOSFET  

Ordering and Marking Information  

Device  

Marking  

Package  

Packing  

Quantity  

ASDM

6

5

N1

8

S  

6

5

SOP-8  

Tape&Reel  

4

0

0

0

 

MARKING  

PACKAGE  

Lot Number  

6

5

N1

8

 

Lead Free  

Date Code  

SOP-8  

Lot Number  

6

5

N1

8

G

 

Halogen Free  

Date Code  

Ordering Number  

Lead Free

 

Halogen Free  

Package  

ASDM

6

5

N1

8

G

–

S

-R  

SOP-8  

ASDM

6

5

N1

8

–

S

-R  

1 R:Tape

 

Reel  

2

S

:

SOP-8  

3

blan

k

: Lead Free  

G:Halogen Free  

ASDM

6

5

N1

8

G

–

S

– R  

1 Packing Type  

2

Package Type  

3

Green Package  

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ASDM

6

5

N1

8

S  

6

5

V N-C

HA

NNE

L

MOSFET  

SOP-8 PACKAGE IN FORMATION  

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ASDM

6

5

N1

8

S  

6

5

V N-C

HA

NNE

L

MOSFET  

IMPORTANT NOTICE  

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incorporated

MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS  

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PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).  

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Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections  

or other changes without further notice to this document and any product described herein.

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Incorporated does not  

assume any liability arising out of the application or use of this document or any product described herein; neither does

Xi‘an Ascend  

Semiconductor

Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this  

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Ascend Semiconductor

Incorporated website, harmless against all damages.  

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Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through  

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