AWINIC-Shanghai-Awinic-Tech-AW5015DNR
| Part # | AWINIC-Shanghai-Awinic-Tech-AW5015DNR |
| Download | AWINIC-Shanghai-Awinic-Tech-AW5015DNR |
AW5015
产品手册
2016
年
4
月
V1.2
极低噪声系数,应用于全球导航卫星系统的低噪声放大器
特性
描述
采用专利的智能线性度增强技
术
(
SLT
)
以
减轻射频环境干扰;
AW501
5
是一款适用于
GPS
,
格
洛纳斯,
伽利略和北斗等全球导航卫星系统
(GNSS)
的低噪声放大器
。
在
射频端口内置隔直电容,
所以输入端口无需另加电容,芯片可以尽量
靠近天线,减少了线路损耗。其外围元器件
简单,只需要一个外置输入匹配电感
,
节省占
板面积
,
是一款经济高效的解决方案。
极低的噪声系数:
0.60dB
;
高功率增益:
18.5dB
;
高线性度
IIP3oob
:
+
4.5dBm
;
高输入
1dB
压缩点:
–
9.2dBm
;
简单的
PCB
应用,只需一个外置的匹配电
感;
AW5015
采用专利的智能线性度增强技
术(
SLT
)
,
具有极低噪声系数,高线性度,
高增益等特性
,
可
支持低至
1.5V
,
高
至
3.6V
的供电电压
。
所
有这些特性使得
AW5015
成
为
GNSS
低噪声放大器的最佳选择,极低的
噪声系数大大地改善了灵敏度,高线性度使
得系统能更好地抵抗带外干扰,并且降低了
前级的滤波要求,进而降低了
GNSS
接收机
的总成本。
输出内部匹配到
50
欧姆
;
工作电压:
1.5V~3.6V;
工作频率:
1550~1615MHz;
纤小的
1.1mmX0.9mmX 0.45mm DFN 6L
封装
3kV HBM
静电保
护
(
包括
RFIN
和
RFOUT
引脚)
应用
AW5015
采用纤小的
1.1mm x 0.9 mm
x 0.45 mm DFN-6L
封装,额定的工作温度
范围为
-40
℃至
85
℃。
手机、平板电脑、数码相机
个人导航设备、射频前端模组
完整的
GPS
芯片模组
防盗保护设备
引脚分布及标记图
Pin No.
Pin Name
GND
顶视图
底视图
1
2
3
4
5
6
1
2
3
6
5
4
6
5
4
1
2
3
VCC
RFOUT
GNDRF
RFIN
EN
A—AW5015DNR
;
X—
生产跟踪码
图
1.
AW5015
引脚分布及标识图
版权所有
© 2016
上海艾为电子技术有限公司
第
1
页 共
23
页
AW5015 datasheet
Apr 2016 V1.2
Ultra-Low Noise Amplifier for Global Navigation
Satellite Systems (GNSS)
FEATURES
INTRODUCTION
Reduce RF environment Interference
with patented Smart-Linearity-Tech-
nology (SLT);
Ultra low noise figure(NF)=0.60dB;
High power gain=18.5dB;
High linearity IIP3oob=+4.5dBm;
High input 1dB-compression point=
-9.2dBm;
The AW5015 is a Low Noise Amplifier
designed for Global Navigation Satellite
Systems (GNSS) as GPS, GLONASS, Ga-
lileo and Compass. With on-chip DC
blocking capacitors at RFIN and RFOUT,
The AW5015 can be close to the antenna,
requires only one external input matching
inductor, and reduces assembly complexity
and the PCB area, enabling a cost-effective
solution.
Requires only one input matching
inductor;
RF output internally matched to 50 ohm;
Supply voltage: 1.5V to 3.6V;
Operating frequencies: 1550~1615MHz;
Slim DFN-6L package:1.1mmX0.9mmX
0.45mm
The AW5015 with patented Smart Li-
nearity Technology (SLT) achieves ultra low
noise figure, high linearity, high gain, over a
wide range of supply voltages from 1.5V up
to 3.6V. All these features make AW5015
an excellent choice for GNSS LNA as it
improves sensitivity with low noise figure
and high gain, provide better immunity
against out-of-band jammer signals with
high linearity, reduces filtering requirement
of preceding stage and hence reduces the
overall cost of the GNSS receiver.
3kV HBM ESD protection (including
RFIN and RFOUT pin)
APPLICATIONS
Smart phones, feature phones,
Tablet PCs,
Personal Navigation Devices,
Digital Still Cameras, Digital Video Cam-
eras;
RF Front End modules;
Complete GPS chipset modules;
Theft protection(laptop, ATM);
The AW5015 is available in a small
lead-free, RoHS-Compliant, 1.1mm
x
0.9mm x 0.45mm 6-pin DFN package
。
PIN CONFIGURATION AND MARKING
Pin No.
Pin Name
GND
Top View
Bottom View
1
2
3
4
5
6
1
2
3
6
5
4
6
5
4
1
2
3
VCC
RFOUT
GNDRF
RFIN
EN
A—AW5015DNR
;
X—Manufactory trace No.
Figure 1.
AW5015 Pin Configuration and Marking
Copyright © 2016 SHANGHAI AWINIC TECHNOLOGY CO., LTD
Page 2 of 23
AW5015 datasheet
Apr 2016 V1.2
TYPICAL APPLICATION
AW5015
RF
OUTPUT
GND
RFOUT
VCC
4
5
3
RFIN
EN
RF
SUPPLY
VOLTAGE
2
INPUT
L1
C1
(optional)
LOGIC
CONTROL
GND
BIAS
6
1
L1=9.1nH
C1=1nF
Figure 2.
Application Schematic AW5015
For a list of components see
Table 6
and
Table 7
.
ORDER INFORMATION
Table 1
.
Order Information
Package RoHS
Mark
Yes
Part Number
Temperature
AW5015DNR
SPQ
1.1mm x 0.9 mm x 0.45mm
DFN-6L
Tape and Reel
3000pcs/Reel
A
-40
℃~
85
℃
A
W
5
015
R :
Tape
&
R
eel
DN: DFN
Copyright © 2016 SHANGHAI AWINIC TECHNOLOGY CO., LTD
Page 3 of 23
AW5015 datasheet
Apr 2016 V1.2
ABSOLUTE MAXIMUM RATINGS
1)
Table 2 .
Limiting Values
Values
Min. Typ. Max.
Parameter
Symbol
Unit
Supply Voltage at pin VCC
V
CC
V
EN
I
CC
-0.3
–
5.0
5.0
30
V
V
Voltage at pin EN
2)
Current into pin VCC
-0.3
–
–
–
mA
dBm
℃
/W
℃
RF input power
3)
P
IN
–
–
–
10
Package thermal resistance
θ
JA
148.2
Junction temperature
Storage temperature range
Ambient temperature range
Solder temperature(10s)
ESD range
T
J
–
–
150
150
85
–
T
STG
T
amb
-65
-40
–
–
–
℃
℃
260
℃
HBM
4)
±
3000
V
Latch-up
+IT: +400
-IT: -400
mA
mA
Standard
:
JEDEC STANDARD NO.78D
NOVEMBER 2011
Note1
: Stresses beyond those listed under
“
absolute maximum ratings
”
may cause permanent damage to the device.
These are stress ratings only and functional operation of the device at these or any other conditions beyond those
indicated under
“
recommended operating conditions
”
is not implied. Exposure to absolute maximum rated condi-
tions for extended periods may affect device reliability.
Note2:
Warning: due to internal ESD diode protection, the applied DC voltage should not exceed 5.0V in order to
avoid excess current.
Note3:
The RF input and RF output are AC coupled through internal DC blocking capacitor.
Note4
: HBM standard: MIL-STD-883H Method 3015.8.
Copyright © 2016 SHANGHAI AWINIC TECHNOLOGY CO., LTD
Page 4 of 23
AW5015 datasheet
Apr 2016 V1.2
ELECTRICAL CHARACTERISTICS
Table 3 .
Electrical Characteristics
(
AW5015 EVB
1
)
; V
CC
=1.5 to 3.6V, T
A
=-40~+85
℃
, f=1550MHz to 1615MHz; Typical values are at V
CC
=2.8V and
T
A
=+25
℃
, f=1575.42MHz, unless otherwise noted.
)
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNITS
DC ELECTRICAL CHARACTERISTICS
V
CC
I
SD
Supply Voltage
1.5
–
3.6
1.0
V
μA
mA
V
EN=Low
EN=High
Shut-Down Current
Supply Current
I
CC
6.9
15.0
V
EN
V
EN
Digital Input-Logic High
Digital Input-Logic Low
0.80
0.45
V
AC ELECTRICAL CHARACTERISTICS
dB
dB
dB
dB
Gp
Power Gain
18.5
7.0
RL
in
ISL
Input Return Loss
Reverse Isolation
Output Return Loss
31.2
12.0
RL
out
Zs=50 ohm;
No jammer
Noise Figure
2)
dB
NF
Kf
0.60
Stability factor
f=20MHz
…
10GHz
1.0
Pjam=-20dBm;
fjam=850MHz
dB
dB
0.96
1.45
0.64
0.69
-9.2
Pjam=-20dBm;
fjam= 1850MHz
NF
j
Noise Figure with jam-
mer
Pjam=-30dBm;
fjam=850MHz
dB
Pjam=-30dBm;
fjam= 1850MHz
dB
Inband input
1dB-compression point
f=1575.42MHz;
dBm
IP
1dB
f1= 1712.7MHz;
f2=1850MHz;
Pin=-20dBm
Out-of-band input
dBm
dBm
dBm
IIP3
oob
+4.1
+4.5
+7.7
3
rd
-order intercept point
f1= 1712.7MHz;
f2=1850MHz;
Pin=-30dBm
Out-of-band input
IIP3
oob
IIP2
oob
IIP2
oob
3
rd
-order intercept point
f1= 2400MHz;
f2=824.6MHz;
Pin=-20dBm
Out-of-band input
2
rd
-order intercept point
f1= 2400MHz;
f2=824.6MHz;
Pin=-30dBm
Out-of-band input
dBm
dBm
+7.7
2
rd
-order intercept point
f=787.76MHz;
Pin=-25dBm;
f
H2
=1575.52MHz
H2-input
referred
LTE band-13 2
nd
Har-
monic
-66.1
Copyright © 2016 SHANGHAI AWINIC TECHNOLOGY CO., LTD
Page 5 of 23
AW5015 datasheet
Apr 2016 V1.2
Table 3 .
Characteristics
……
continued
(
AW5015 EVB
1
)
; V
CC
=1.5 to 3.6V, T
A
=-40~+85
℃
, f=1550MHz to 1615MHz; Typical values are at V
CC
=2.8V and
T
A
=+25
℃
, f=1575.42MHz, unless otherwise noted.
)
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNITS
AC ELECTRICAL CHARACTERISTICS
Turn-on time
3)
t
on
2.2
1.7
µ
s
µ
s
Turn-off time
3)
t
off
Copyright © 2016 SHANGHAI AWINIC TECHNOLOGY CO., LTD
Page 6 of 23
AW5015 datasheet
Apr 2016 V1.2
Table 4 .
Electrical Characteristics
(AW5015 EVB
1
)
;VCC=1.5 to 3.6V, T
A
=-40~+85
℃
, f=1550MHz to 1615MHz; Typical values are at V
CC
=1.8V and
T
A
=+25
℃
, f=1575.42MHz, unless otherwise noted.
)
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNITS
DC ELECTRICAL CHARACTERISTICS
V
CC
I
SD
Supply Voltage
1.5
–
3.6
1.0
V
μA
mA
V
EN=Low
EN=High
Shut-Down Current
Supply Current
I
CC
6.2
15.0
V
EN
V
EN
Digital Input-Logic High
Digital Input-Logic Low
0.80
0.45
V
AC ELECTRICAL CHARACTERISTICS
dB
dB
dB
dB
Gp
Power Gain
18.0
6.5
RL
in
ISL
Input Return Loss
Reverse Isolation
Output Return Loss
31.0
13.5
RL
out
Zs=50 ohm;
No jammer
Noise Figure
2
)
dB
NF
Kf
0.61
f=20MHz
…
10GHz
Stability factor
1.0
Pjam=-20dBm;
fjam=850MHz
dB
dB
1.01
1.49
0.67
0.71
-14.5
Pjam=-20dBm;
fjam= 1850MHz
NF
j
Noise Figure with jam-
mer
Pjam=-30dBm;
fjam=850MHz
dB
Pjam=-30dBm;
fjam= 1850MHz
dB
Inband input
1dB-compression point
f=1575.42MHz
dBm
IP
1dB
f1= 1712.7MHz;
f2=1850MHz;
Pin=-20dBm;
Out-of-band input
dBm
dBm
dBm
IIP3
oob
-2.5
-0.5
+7.1
3
rd
-order intercept point
f1= 1712.7MHz;
f2=1850MHz;
Pin=-30dBm;
Out-of-band input
IIP3
oob
IIP2
oob
IIP2
oob
3
rd
-order intercept point
f1= 824.6MHz;
f2=2400MHz;
Pin=-20dBm
Out-of-band input
2
rd
-order intercept point
f1= 824.6MHz;
f2=2400MHz;
Pin=-30dBm
Out-of-band input
dBm
dBm
+7.1
2
rd
-order intercept point
f=787.76MHz;
Pin=-25dBm;
f
H2
=1575.52MHz
H2-input
referred
LTE band-13 2
nd
Har-
monic
-65.0
Copyright © 2016 SHANGHAI AWINIC TECHNOLOGY CO., LTD
Page 7 of 23
AW5015 datasheet
Apr 2016 V1.2
Table 4 . Characteristics
……
continued
(AW5015 EVB
1
)
;VCC=1.5 to 3.6V, TA=-40~+85
℃
, f=1550MHz to 1615MHz; Typical values are at V
CC
=1.8V and
T
A
=+25
℃
, f=1575.42MHz, unless otherwise noted.
)
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNITS
AC ELECTRICAL CHARACTERISTICS
Turn-on time
3)
t
on
2.2
1.7
µ
s
µ
s
Turn-off time
3)
t
off
Note1:
input matched to 50 ohm using a high quality-factor 9.1nH inductor.
Note2
: 0.08dB PCB losses are subtracted.
Note3:
Within 10% of the final gain.
Copyright © 2016 SHANGHAI AWINIC TECHNOLOGY CO., LTD
Page 8 of 23
AW5015 datasheet
Apr 2016 V1.2
TYPICAL OPERATING CHARACTERISTICS
(AW5015 EVB; Typical values are at Vcc=2.8V and T
A
=+25
℃
, f
RFIN
=1575.42MHz, unless otherwise noted.)
ICC
Noise Figure
12
10
8
1.2
1
(3)
(2)
(1)
(3)
0.8
0.6
0.4
0.2
0
(2)
(1)
6
4
2
0
1
1.5
2
2.5
3
3.5
VCC(V)
1
1.5
2
2.5
3
3.5
VCC(V)
Pi=-45dBm.
(1) T
A
=-25
℃
(2) T
A
=+25
℃
(3) T
A
=+85
℃
Pi=-45dBm.
(1) T
A
=-25
℃
(2) T
A
=+25
℃
(3) T
A
=+85
℃
Figure 3. Supply current as a function of supply
voltage; typical values
Figure 4. Noise Figure as a function of supply
voltage; typical values
Power Gain
19.5
(1)
19
Noise Figure
1.6
1.4
1.2
(2)
18.5
18
(3)
1
17.5
17
(3)
0.8
(2)
16.5
16
0.6
(1)
0.4
15.5
15
0.2
0
14.5
1
1.5
2
2.5
3
3.5
1000
1200
1400
1600
1800
2000
f(MHz)
VCC(V)
Pi=-45dBm.
(1) T
A
=-25
℃
(2) T
A
=+25
℃
(3) T
A
=+85
℃
VCC=1.8V; Pi=-45dBm.
(1) T
A
=-25
℃
(2) T
A
=+25
℃
(3) T
A
=+85
℃
Figure 5. Power Gain as a function of supply
voltage; typical values
Figure 6. Noise Figure as a function of frequen-
cy; typical values
Copyright © 2016 SHANGHAI AWINIC TECHNOLOGY CO., LTD
Page 9 of 23
AW5015 datasheet
Apr 2016 V1.2
Noise Figure
Power Gain
1.6
1.4
1.2
1
20
18
16
14
12
10
8
(1)
(2)
(3)
(3)
0.8
0.6
0.4
0.2
0
(2)
(1)
6
1000
1200
1400
1600
1800
2000
f(MHz)
1000
1200
1400
1600
1800
2000
f(MHz)
VCC=2.8V; Pi=-45dBm.
(1) T
A
=-25
℃
VCC=1.8V; Pi=-45dBm.
(1) T
A
=-25
℃
(2) T
A
=+25
℃
(2) T
A
=+25
℃
(3) T
A
=+85
℃
(3) T
A
=+85
℃
Figure 7. Noise Figure as a function of frequen-
Figure 8. Power Gain as a function of frequency;
cy ; typical values
typical values
Power Gain
Power Gain
19
18
17
16
15
14
13
12
11
10
22
20
18
16
14
12
10
8
(1)
(2)
(1)
(2)
(3)
(3)
6
-35
-29
-23
-17
-11
-5
1000
1200
1400
1600
1800
2000
f(MHz)
Pin(dBm)
VCC=1.8V; f=1575.42MHz.
(1) T
A
=-25
℃
VCC=2.8V; Pi=-45dBm.
(1) T
A
=-25
℃
(2) T
A
=+25
℃
(2) T
A
=+25
℃
(3) T
A
=+85
℃
(3) T
A
=+85
℃
Figure 10. Power Gain as a function of input
power; typical values
Figure 9. Power Gain as a function of frequency;
typical values
Copyright © 2016 SHANGHAI AWINIC TECHNOLOGY CO., LTD
Page 10 of 23
AW5015 datasheet
Apr 2016 V1.2
Power Gain
Power Gain
20
19
18
17
16
15
14
13
12
19
18
17
16
15
14
13
12
11
10
9
(1)
(2)
(1)
(3)
(4)
(2)
(3)
(5)
-35
-29
-23
-17
-11
-5
Pin(dBm)
-35
-29
-23
-17
-11
-5
Pin(dBm)
T
A
=+25
℃
; f=1575.42MHz.
(1) VCC=3.6V
VCC=2.8V; f=1575.42MHz.
(1) T
A
=-25
℃
(2) VCC=3.1V
(2) T
A
=+25
℃
(3) VCC=2.8V
(3) T
A
=+85
℃
(4) VCC=1.8V
(5) VCC=1.5V
Figure 11. Power Gain as a function of input
power; typical values
Figure 12. Power Gain as a function of input
power; typical values
out-of-band IIP3
out-of-band IIP3
6
1
5
0
(1)
4
-1
(1)
3
-2
(2)
2
(2)
-3
1
(3)
(3)
-4
0
-5
-6
-7
-1
-2
-3
-30 -28 -26 -24 -22 -20 -18 -16 -14 -12 -10
Pin(dBm)
-30 -28 -26 -24 -22 -20 -18 -16 -14 -12 -10
Pin(dBm)
VCC=1.8V; f1=1713MHz; f2=1851MHz.
(1) T
A
=-25
℃
VCC=2.8V; f1=1713MHz; f2=1851MHz.
(1) T
A
=-25
℃
(2) T
A
=+25
℃
(2) T
A
=+25
℃
(3) T
A
=+85
℃
(3) T
A
=+85
℃
Figure 13. out-of-band input IP3 as a function of
input power; typical values
Figure 14. out-of-band input IP3 as a function of
input power; typical values
Copyright © 2016 SHANGHAI AWINIC TECHNOLOGY CO., LTD
Page 11 of 23
AW5015 datasheet
Apr 2016 V1.2
out-of-band IIP2
out-of-band IIP2
13
11
9
11
9
(3)
(2)
(3)
7
(2)
7
5
(1)
(1)
5
3
3
1
1
-1
-3
-1
-3
-30 -28 -26 -24 -22 -20 -18 -16 -14 -12 -10
Pin(dBm)
-30 -28 -26 -24 -22 -20 -18 -16 -14 -12 -10
Pin(dBm)
VCC=1.8V; f1=824.6MHz; f2=2400MHz.
(1) T
A
=-25
℃
VCC=2.8V; f1=824.6MHz; f2=2400MHz.
(1) T
A
=-25
℃
(2) T
A
=+25
℃
(2) T
A
=+25
℃
(3) T
A
=+85
℃
(3) T
A
=+85
℃
Figure 15. out-of-band input IP2 as a function of
Figure 16. out-of-band input IP2 as a function of
input power; typical values
input power; typical values
Input Return Loss
Input Return Loss
0.00
-1.00
-2.00
-3.00
-4.00
-5.00
-6.00
-7.00
-8.00
-9.00
0
-1
-2
-3
-4
(2)
(3)
(2)
(3)
-5
-6
-7
(1)
(1)
-8
-9
-10
1000
1200
1400
1600
1800
2000
f(MHz)
1000
1200
1400
1600
1800
2000
f(MHz)
VCC=1.8V; Pin=-35dBm.
(1) T
A
=-25
℃
VCC=2.8V; Pin=-35dBm.
(1) T
A
=-25
℃
(2) T
A
=+25
℃
(2) T
A
=+25
℃
(3) T
A
=+85
℃
(3) T
A
=+85
℃
Figure 17. Input return loss as a function of
frequency; typical values
Figure 18. Input return loss as a function of
frequency; typical values
Copyright © 2016 SHANGHAI AWINIC TECHNOLOGY CO., LTD
Page 12 of 23
AW5015 datasheet
Apr 2016 V1.2
Input Return Loss
Output Return Loss
0
-1
0
-5
(5)
(4)
(3)
(2)
-2
-3
-10
-15
-20
-25
-30
(5)
(4)
(3)
(2)
(1)
(1)
-4
-5
-6
-7
-8
-9
-10
1000
1200
1400
1600
1800
2000
f(MHz)
1000
1200
1400
1600
1800
2000
f(MHz)
T
A
=+25
℃
; Pin=-35dBm.
(1) VCC=1.5V
T
A
=+25
℃
; Pin=-35dBm.
(1) VCC=1.5V
(2) VCC=1.8V
(2) VCC=1.8V
(3) VCC=2.8V
(3) VCC=2.8V
(4) VCC=3.1V
(4) VCC=3.1V
(5) VCC=3.6V
(5) VCC=3.6V
Figure 19. Input return loss as a function of
frequency; typical value
Figure 20. Output return loss as a function of
frequency; typical values
Output Return Loss
Output Return Loss
0
0
-5
-5
(1)
(1)
(2)
(2)
-10
(3)
(3)
-10
-15
-15
-20
-25
-20
-25
-30
1000
1200
1400
1600
1800
2000
f(MHz)
1000
1200
1400
1600
1800
2000
f(MHz)
VCC=2.8V; Pin=-35dBm.
(1) T
A
=-25
℃
VCC=1.8V; Pin=-35dBm.
(1) T
A
=-25
℃
(2) T
A
=+25
℃
(2) T
A
=+25
℃
(3) T
A
=+85
℃
(3) T
A
=+85
℃
Figure 22. Output return loss as a function of
frequency; typical values
Figure 21. Output return loss as a function of
frequency; typical values
Copyright © 2016 SHANGHAI AWINIC TECHNOLOGY CO., LTD
Page 13 of 23
AW5015 datasheet
Apr 2016 V1.2
Isolation
Isolation
-25
-30
-35
-40
-45
-50
-55
-25
-30
-35
-40
-45
-50
-55
(1)
(2)
(3)
(1)
(2)
(3)
1000
1200
1400
1600
1800
2000
f(MHz)
1000
1200
1400
1600
1800
2000
f(MHz)
VCC=1.8V; Pin=-35dBm.
(1) T
A
=-25
℃
VCC=2.8V; Pin=-35dBm.
(1) T
A
=-25
℃
(2) T
A
=+25
℃
(2) T
A
=+25
℃
(3) T
A
=+85
℃
(3) T
A
=+85
℃
Figure 23. Isolation as a function of frequency;
typical values
Figure 24. Isolation as a function of frequency;
typical values
Isolation
-25
-30
-35
(5)
(4)
-40
(3)
(2)
(1)
-45
-50
-55
1000
1200
1400
1600
1800
2000
f(MHz)
T
A
=+25
℃
; Pin=-35dBm.
(1) VCC=1.5V
(2) VCC=1.8V
(3) VCC=2.8V
(4) VCC=3.1V
(5) VCC=3.6V
Figure 25. Isolation as a function of frequency;
typical values
Copyright © 2016 SHANGHAI AWINIC TECHNOLOGY CO., LTD
Page 14 of 23
AW5015 datasheet
Apr 2016 V1.2
AW5015 APPLICATION BOARD
Figure 26.
Drawing of Application Board
Vias
Copper
35um
FR4
AW5015DN
R
_
a
pplicatio
n
_
b
oar
d
_
s
ideview
Figure 27.
Application Board Cross-Section
Copyright © 2016 SHANGHAI AWINIC TECHNOLOGY CO., LTD
Page 15 of 23
AW5015 datasheet
Apr 2016 V1.2
TEST CIRCUITS
1. DC
Characteristics test: including power suppl
y
, pin voltage, supply current, standby current
AW5015
RF
OUTPUT
GND
RFIN
RFOUT
VCC
4
5
3
SUPPLY
VOLTAGE
A
RF
2
INPUT
L1
C1
(optional)
V
EN
LOGIC
CONTROL
GND
BIAS
6
1
L1=9.1nH
C1=1nF
Figure 28.
Circuit for DC test
2. S
Parameter test: including input return loss, output return loss, reverse isolation, forward
gain, 1dB gain compression.
RF
INPUT
RF
OUTPUT
AW5015 EVB
NetWork Analyzer
Figure 29.
Circuit for S Parameter test
3. Noise
Figure test: including noise figure, power gain.
RF
INPUT
RF
OUTPUT
AW5015 EVB
Noise
Source
NF Analyzer
Figure 30.
Circuit for Noise Figure test
Copyright © 2016 SHANGHAI AWINIC TECHNOLOGY CO., LTD
Page 16 of 23
AW5015 datasheet
Apr 2016 V1.2
4. Intermodulation
distortion test: including third-order intercept point.
Signal
Generator
RF
OUTPUT
Power
Combiner
RF
INPUT
Signal Analyzer
AW5015 EVB
Signal
Generator
Figure 31.
Circuit for intermodulation distortion test
Copyright © 2016 SHANGHAI AWINIC TECHNOLOGY CO., LTD
Page 17 of 23
AW5015 datasheet
Apr 2016 V1.2
APPLICATION INFORMATIONS
2. The
output of AW5015 is internally
matched to 50 ohm and a DC
blocking capacitor is integrated
on-chip, thus no external compo-
nent is required at the output.
1.1
EN control
The AW5015 includes an internal
switch to turn off the entire chip:
apply logic high to EN to turn on,
and a logic low to shut down.
1.2
List of components
3. The AW5015 should be placed
close to the GPS antenna with the
input-matching inductor. Use 50-
ohm microstrip lines to connect RF
INPUT and RF OUTPUT. Bypass
capacitor should be located close to
the device. For long Vcc lines, it
may be necessary to add more
1. The
AW5015 requires only one ex-
ternal inductor for input matching. If
the device/phone manufacturers
implement very good power supply
filtering on their boards, the bypass
capacitor mentioned in this applica-
tion circuit may be optional. With
the capacitor we can get better
performance like a little higher gain
etc. The value is optimized for the
best gain, noise figure, return loss
performance. Typical value of in-
ductor is 9.1nH, capacitor is 1n
F
.
For schematics see
Figure2
.
decoupling
capacitors.
Proper
grounding of the GND pins is very
important.
Table6 lists the recommended inductor types and values; Table 7 lists the recommended
capacitor types and values.
Table6: list of inductor
Part Number
Inductance Q(min)
Q Test
Supplier Size
Frequency
Units
nH
9.1
9.1
MHz
250
250
LQW15A
25
24
Murata 0402
Sunlord 0402
SDWL1005C
Table7: list of capacitor
Part Number
Capacitance Rated
Voltage Supplier Size
Units
pF
V
GRM155
1000
50
Murata 0402
Copyright © 2016 SHANGHAI AWINIC TECHNOLOGY CO., LTD
Page 18 of 23
AW5015 datasheet
Apr 2016 V1.2
PACKAGE INFORMATION
A
//
C
ccc
C
bbb
A1
D
A
B
E
SEATING PLANE
M
1
PIN1 CORNER
M
A3
A2
aaa
C
TOP VIEW
SIDE VIEW
CONTROLLING DIEMENSION
MILLIMETER
PIN1 ID
SYMBOL
MIN
0.40
0.00
0.25
NOM
0.45
—
MAX
0.50
1
6
A
A1
A2
0.05
0.35
0.30
e
A3
b
D
E
e
0.150 REF
0.20
0.90
1.10
0.40 BSC
0.30
0.30
1.00
1.20
0.10
0.80
1.00
L
0.40
0.25
0.20
0.1
0.1
0.08
0.1
0.1
aaa
bbb
ccc
ddd
eee
4
6xb
3
ddd
M
C A B
6xL
L1
eee
C A B
L1
0.15
0.20
BOTTOM VIEW
Figure 32.
Package Outline
Copyright © 2016 SHANGHAI AWINIC TECHNOLOGY CO., LTD
Page 19 of 23
AW5015 datasheet
Apr 2016 V1.2
TAPE&REEL DESCRIPTION
2.0±0.05
B
'
Φ
1.55±0.05
4.0±0.1
0.25±0.05
Pin1
Marking
1.22±0.05
A
'
A
REF 5°
Section B-B
'
4.0±0.1
B
Φ
0.55±0.05
0.6±0.05
1.02±0.05
Section A-A
'
Figure 33. Tape & Reel
Copyright © 2016 SHANGHAI AWINIC TECHNOLOGY CO., LTD
Page 20 of 23
AW5015 datasheet
Apr 2016 V1.2
REFLOW
Copyright © 2016 SHANGHAI AWINIC TECHNOLOGY CO., LTD
Page 21 of 23
AW5015 datasheet
Apr 2016 V1.2
FOOTPRINT INFORMATION
NSMD: Non-Solder Mask Defined pads
0.4mm
0.4mm
0.25mm
0.25mm
(stencil thickness 100um)
Stencil apertures
Copper
Solder mask
Figure 34.
Footprint
Copyright © 2016 SHANGHAI AWINIC TECHNOLOGY CO., LTD
Page 22 of 23
AW5015 datasheet
Apr 2016 V1.2
REVISION HISTORY
Table 8.
Revision history
Document ID
Release date
Change notice
Supersedes
AW5015_V1.2
AW5015_V1.1
2016-04
2015-12
Added REFLOW NOTES
AW5015_V1.1
Added Tape & Reel Description and cor-
AW5015_V1.0
rected the marking location of Pin1
AW5015_V1.0
2014-04
Product data sheet
AW5015_V0.8
Updated typical operating characteris-
tics with temperature variation
Added ESD characteristics
Added IIP2oob
Added Jammed noise figure
Added footprint information
Added revision history
AW5015_V0.8
AW5015_V0.7
2014-02
2013-11
Preliminary data sheet
AW5015_V0.7
Updated electrical characteristics
Updated typical operating characte-
ristics under T
A
=+25
℃
Preliminary data sheet
–
Notice
:
Shanghai Awinic Technology Co. ltd cannot assume responsibility for use of any
circuitry other than circuitry entirely embodied in an Awinic product. No circuit patent
licenses are implied. Awinic reserves the right to change the circuitry and specifications
without notice at any time.
Copyright © 2016 SHANGHAI AWINIC TECHNOLOGY CO., LTD
Page 23 of 23
