AWINIC-Shanghai-Awinic-Tech-AW5017DNR

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AW5017DNR

2016

年

月

V1.2

AW5017:

内置可调谐电容的

低噪声放大器

特性

描述



无需耳机及拉杆天线

，

通

过复用

GSM

天线实现

AW5017

是一款低噪声放大器

，

无

需耳机和拉杆天线，

信号接收

通过复用

GSM

天线实现

信号接收。

内置一线可编程逻辑单元的可调谐电容阵列

，

有

效

AW5017

内置

管脚控制的一线可编程逻辑单元，

提升短天线在不同工作频段的天线效率

极低的噪声系数

:1.2dB

可控制

个台阶的可调谐电容阵列，有效提升短天

线增益



AW5017

具有低噪声，高增益，高线性度的特性，典

型值噪声系数

1.2dB

，增益

21dB

。

标准

CMOS

工艺

1.8V

工作电压下高达

20dB

的增益

高线性度

AW5017

的电源电压和使能

电压范围在

1.5V

到

3.6V

，典型值为

1.8/2.8V

。

管脚支持一线可编程逻辑的

4bit

可调谐电容

工作电压：

1.5V~3.6V

AW5017

将

射频开关集成在内部芯片，在关断的

条件下可以实现高阻抗，关机电流小于

0.1

。

关机电流

0.1μA

纤小的

1.5×1.0×0.55 mm

DFN-6L

封装

AW5017

采用纤小的

1.5mm×1.0mm×0.55mm

DFN-6L

封装，额定的工作温度范围为

-40

℃至

℃。

应用



功能和智能手机

便携式音频设备

引脚分布及标记图

俯视图

顶视图

管脚顺序

管脚名称

VCC

RFOUT

GND

RFIN

B—AW5017DNR; XY—

生产跟踪码

图

1 AW5017

引脚分布图

手册中提到的全部商标所有权归各自拥有者所有。

上海艾为电子技术有限公司

第

页共

页

AW5017DNR

Jan 2016

V1.2

FM Low-Noise-Amplifier with Embedded Tunable Capacitor

FEATURES

GENERAL DESCRIPTION



Without any earphone or telescopic antenna,

AW5017 is a Low-Noise-Amplifier (LNA), without

receive FM-radio signal through re-using GSM

earphone or telescopic antenna, re-using GSM

antenna

antenna to receive FM-radio signal.



Internal tunable capacitor-array using

One-

AW5017 is characterized with low noise, high gain

Line-Logic unit

and high linearity. Typical noise figure is 1.2dB and

power gain is 21dB.



Ultra-low noise-figure: 1.2dB

Standard CMOS process technology

High power gain of 20dB under 1.8V supply

High linearity

AW5017 is powered by 2.6V~3.6V supply with

typical 2.8V. EN supports 2.8V/1.8V GPIO input.

AW5017 integrates RF radio switch inside,

implementing high impedance under shut-down

condition. Shut-down current is less than 0.1

EN supports 4-bit programmable One-Line-Logic

Supply voltage: 1.5V~3.6V

AW5017

available

slim

Shut-down current:

<0.1μA

Slim 1.5×1.0×0.55 mm

DFN-6L package

1.5mm×1.0mm×0.55mm DFN-6L package. The

specified operating free- air temperature ranges

from -40

℃

to 85

℃

APPLICATIONS



Feature or Smart mobile phone

Mobile audio device

PIN CONFIGURATION AND TOP MARK

Bottom View

Top View

Pin No.

Pin Name

VCC

RFOUT

GND

RFIN

B—AW5017DNR; XY—Manufacture Code

Figure 1 AW5017 pin configuration and top mark

All trademarks are the property of their respective owners.

Page2 of 18

AW5017DNR

Jan 2016

V1.2

GSM PIF

天线

耳机

Easy FM

馈点

地点

120nH

22pF

GND

RFOUT

47nF

FM receiver

AW5017

47nF

GPIO

–

RFIN

VCC

VIO

68nH

33nH

47nF

100nH

C10

47nF

120nH

22pF

DFN-6L

设计要点：

1. AW5017

需尽量靠近天线馈点端；

2. AW5017

的接地线尽量短并且接地完好；

注意

RFIN

和

RFOUT

的隔离，

RFOUT

至

的射频走线需走

PCB

内层；

采用

50 ohm

阻抗线，并做好屏蔽，到

芯片的距离尽量短；

4. AW5017

支持耳机天线，当检测到耳机插入时，

GPIO

口拉低，关断

AW5017;

当不兼容耳机线做天线时，可以省略

C7,C6

相应的一端直接连接到

芯片

;

6. C10

需预留，用于后期

AW5017

调试。

GSM

22pF

GSM transceiver

Figure

W5017 typical application circuit

ORDERING INFORMATION

Table 1 ORDERING INFORMATION

Part Number

Temperature

Package

RoHS

Marking

Delivery Form

3000 units/

1.5mm×1.0mm×0.55mm

DFN-6L

AW5017DNR

-40

℃～

℃

Yes

Tape

and Reel

AW5017

Shipping

R: Tape & Reel

Package Type

DN: DFN

Page3 of 18

AW5017DNR

Jan 2016

V1.2

PIN DEFINITION

Table 2 PIN DEFINITION AND THEIR FUNCTION DESCRIPTION

No.

NAME

VCC

DESCRIPTION

Supply connection.

Not connected. Prefer ground.

RF output.

RFOUT

GND

Ground.

EN (high level) supports 1.8V/2.8V IO with internal 150Kohm

pull-down resistor.

RFIN

RF input.

ABSOLUTE MAXIMUM RATINGS

(NOTE1)

Table 3 ABSOLUTE MAXIMUM RATINGS

PARAMETERS

Supply Voltage VCC

RANGE

-0.3 V to 4.2 V

30 mA

EN pin voltage

Supply maximum current ICC

RFIN input power Pin

20 dBm

Junction-to-ambient thermal resistance

625

℃

Maximum Junction temperature T

JMAX

Storage temperature T

STG

125

℃

-65

℃

to 150

℃

-40

℃

to 85

℃

260

℃

Operating free-air temperature range

Lead Temperature (Soldering 10 Seconds)

ESD

(NOTE 2)

RFIN/RFOUT PINs:

3500 V

PINs HBM (human body model)

Other PINs:

5000 V

Latch-up

st Condition: JEDEC STANDARD NO.78B DECEMBER 2008

+IT

：

+300 mA

-IT

：

-300 mA

Page4 of 18

AW5017DNR

Jan 2016

V1.2

ELECTRICAL CHARACTERISTICS

Table 4 INFORMATION OF ELECTRICAL CHARACTERISTICS UNDER 1.8V SUPPLY

Test condition: TA=25

℃

, VCC=1.8 V, EN=1.8 V, Rs=Ro=50 ohm

，

frequency=90 MHz for typical values

(unless otherwise noted).

PARAMETER

Shut-down Current

Static Current

TEST CONDITION

MIN

EN=0V

TYP MAX

UNIT

μA

ISD

0.1

6.8

EN=1.8V

Noise Figure

Input/Output 50ohm

(NOTE 3)

1.4

S11

S12

S21

S22

Input Return Loss

Reverse Isolation

Power Gain

-3.8

-39.0

21.0

-20.5

Output Return Loss

Stability Factor

Input 3rd-order intercept

point

IIP3

-12

-23

dBm

In-Band

IB P-1dB

Input/Output 50ohm

1dB-compression point

Output-Of-Band

(NOTE 4)

OOB P-1dB

-6

dBm

1dB- compression point

Table 5 INFORMATION OF ELECTRICAL CHARACTERISTICS UNDER 2.8V SUPPLY

Test condition: TA=25

℃

, VCC=2.8 V, EN=2.8 V, Rs=Ro=50 ohm

，

frequency=90 MHz for typical values

(unless otherwise noted).

PARAMETER

Shut-down Current

Static Current

TEST CONDITION

MIN

EN=0V

TYP MAX

UNIT

μA

ISD

0.1

9.2

EN=2.8V

Noise Figure

Input/Output 50ohm

(NOTE 3)

1.2

S11

S12

S21

S22

Input Return Loss

Reverse Isolation

Power Gain

-3.9

-37.3

21.0

-18.0

Output Return Loss

Stability Factor

Input 3rd-order intercept

point

IIP3

-9

dBm

In-Band

IB P-1dB

Input/Output 50ohm

-21

1dB-compression point

Output-Of-Band

(NOTE 4)

OOB P-1dB

-2

dBm

1dB- compression point

Page5 of 18

AW5017DNR

Jan 2016

V1.2

Table 6 ELECTRICAL CHARACTERISTICS OF TUNABLE CAPACITOR

Test condition: TA=25

℃

, VCC=1.5

～

3.6V, EN=VCC, Rs=Ro=50 ohm

，

frequency=90 MHz for typical values

(unless otherwise noted).

PARAMETER

Supply Voltage

MIN

1.5

0.4

TYP

MAX

3.6

UNIT

2.8

EN High Level Duration Time

EN Low Level Duration Time

EN State Latch Time

(NOTE 5)

EN Off Delay Time

(NOTE 6)

LATCH

OFF

150

500

Tunable Stage Number

Minimum Tunable Capacitor

Maximum Tunable Capacitor

Minimum Stage

min

max

step

NOTE1

Conditions out of those ranges listed in “absolute maximum ratings” may cause permanent damages

to the device. In spite of the limits above, functional operation conditions of the device should within the

ranges listed in “recommended operating conditions”. Exposure to absolute-maximum-rated conditions for

prolonged periods may affect device reliability.

NOTE2

The human body model is a 100pF capacitor

discharged through a 1.5kΩ resistor into each pin. Test

method: MIL-STD-883G Method 3015.7

NOTE3: Measure IIP3 parameter through two tones of -40dBm/tone with the frequency of 97M and 98MHz

NOTE4: Input/Output are both 50-ohm; Input signal is composed of in-band 90-MHz signal and out-of-band

900MHz signal. Signal of 90-MHz is fixed to -40-dBm; signal of 900MHz varies and power level is measured

when power gain of 90MHz signal drops 1dB.

NOTE5: Latch mechanism is already designed inside. When pulse width of high-level is wider than state latch

time, chip will keep latch state inside unchanged and won

’

t accept any new pulses, until off state.

NOTE6: Latch mechanism is already designed inside. When EN is changed from high-level to low-level, state

inside will be changed to off after off delay time.

Pulse N

umber

Tunable

Capacit

or State

OFF

Figure 3 One-Line-Logic Timing Diagram

Page6 of 18

AW5017DNR

Jan 2016

V1.2

TYPICAL CHARACTERISTICS

Test condition: TA=25

℃

, VCC=1.8 V, EN=1.8 V, Rs=Ro=50 ohm

，

frequency=90 MHz for typical values

(unless otherwise noted).

Table 7 TABLE OF FIGURES

INDEX

FIGURE No.

FIGURE 4/5/6/7

S parameter

Noise Figure

S11/S21/S12/S22

FIGURE 8

FIGURE 9

FIGURE 10

FIGURE 11

Stability Factor

P1dB Compression Point

Noise Figure

P1dB(In-band/Out-of-Band)

-1

-2

-3

-4

-5

-6

-7

Frequency(MHz)

Figure 5

Power Gain(S21)

Figure 4

Input Return Loss(S11)

-2

-4

-6

-8

-10

-12

-14

-16

-18

-20

-10

-20

-30

-40

-50

-60

Frequency(MHz)

Figure 7

Output Return Loss(S22)

Figure 6

Reverse Isolation(S12)

Page7 of 18

AW5017DNR

Jan 2016

V1.2

1.8

1.6

1.4

1.2

0.8

0.6

0.4

0.2

Frequency(MHz)

Figure 8

Noise Figure(NF)

Figure 9

Stability Factor(K

)

Out-Of-Band P1dB

In-Band P1dB

-50 -35 -24 -21 -18 -15

-8 -5 -2

0 1 2 3 4 5 6 7 8 9

101112131415

Input Power(dBm)

Pulse Number

Figure 10

P1dB(In-Band/Out-Of-Band)

Figure 11

Tunable Capacitor(C

)

Page8 of 18

AW5017DNR

Jan 2016

V1.2

Test condition: TA=25

℃

, VCC=2.8 V, EN=2.8 V, Rs=Ro=50 ohm

，

frequency=90 MHz for typical values

(unless otherwise noted).

Table 8 TABLE OF FIGURES

INDEX

FIGURE No.

FIGURE 12/13/14/15

FIGURE 16

S parameter

Noise Figure

S11/S21/S12/S22

FIGURE 17

Stability Factor

FIGURE 18

P1dB Compression Point

Noise Figure

P1dB(In-band/Out-of-Band)

FIGURE 19

-1

-2

-3

-4

-5

-6

-7

Frequency(MHz)

Figure 13

Power Gain(S21)

Figure 12

Input Return Loss(S11)

-5

-10

-20

-30

-40

-50

-60

-70

-10

-15

-20

-25

Frequency(MHz)

Figure 15

Output Return Loss(S22)

Figure 14

Reverse Isolation(S12)

Page9 of 18

AW5017DNR

Jan 2016

V1.2

1.8

1.6

1.4

1.2

0.8

0.6

0.4

0.2

Frequency(MHz)

Figure 16

Noise Figure(NF)

Figure 17

Stability Factor(K

)

Out-Of-Band P1dB

In-Band P1dB

-5

–

10 -8

-6 -4 -2

0 1 2 3 4 5 6 7 8 9

10 11 12 13 14 15

Input Power(dBm)

Pulse Number

Figure 18

P1dB(In-Band/Out-Of-Band)

Figure 19

Tunable Capacitor(C

)

Page10 of 18

AW5017DNR

Jan 2016

V1.2

FUNCTIONAL BLOCK DIAGRAM

VCC

LDO

Reference

4bit

DCAP

RFIN

LNA

GND

Figure 20

AW5017 FUNCTION BLOCK DIAGRAM

MEASUREMENT DIAGRAM

Test DC Characteristics (Current&Power)

2.8V

VCC

RFIN

AW5017

GPIO

1.8V/2.8V

EZ-FM

Pout

RFOUT

GND

Figure 21

AW5017 DC Test diagram

Page11 of 18

AW5017DNR

Jan 2016

V1.2

Test S-parameter

2.8V

VCC

RFIN

AW5017

GPIO

1.8V/2.8V

EZ-FM

Pout

RFOUT

GND

NetWork Analyzer

Figure 22

AW5017 S-parameter measurement Diagram

Test Noise-Figure

2.8V

VCC

RFIN

AW5017

GPIO

1.8V/2.8V

EZ-FM

Pout

RFOUT

GND

Noise

Source

NF Analyzer

Figure 23

AW5017 Noise Figure Measurement Diagram

Page12 of 18

AW5017DNR

Jan 2016

V1.2

Test IIP3

Signal

Generator

Power

Combiner

2.8V

VCC

RFIN

Signal

Generator

AW5017

GPIO

1.8V/2.8V

EZ-FM

Pout

Signal Analyzer

RFOUT

GND

Figure 24

AW5017 IIP3 Measurement Diagram

Test Tunable Capacitor

2.8V

NetWork Analyzer

VCC

RFIN

AW5017

Arbitrary Waveform

Generator

EZ-FM

RFOUT

GND

Figure 25

AW5017 Tunable Capacitor Measurement Diagram

Page13 of 18

AW5017DNR

Jan 2016

V1.2

APPLICATION INFORMATION

Choice of components

Take Figure 2 for example:

Filter block near PIFA antenna is composed of L6 and C3. These two components can be removed for

Dipole antenna. Typical value of L6 is 68 nH and of C3 is 39 pF.

Filter block of FM signal is composed of C1 and L1. GSM signal could go through and FM signal will be

blocked. GSM antenna

-type matching circuit is composed of C2, L3 and L4, adjustable based on GSM

antenna characteristics. Typically C1 is 39 pF and L1 is 68 nH.

Matching circuit of FM signal path is composed of C4, L4, L5 and L7. FM signal could go through and

GSM signal will be blocked. Typically L4 is 100 nH, L5 is 68 nH and L7 is 33 nH.

C5 is supply filtering capacitor. C6 is DC-blocking capacitor. Both are 47 nF typically.

Only when supporting earphone antenna application, C7 is added with the value of 47 nF.

Table 9 shows recommended inductor type and values. Table 10 shows recommended capacitor type

and values.

Table 9 CHOICE OF INDUCTOR

PART No.

TYP.

33nH

Q(min) Frequency

MFR

SIZE

0402

LQG15HS33NJ02

LQG15HS68NJ02

LQG15HSR12J02

LQG15HSR10J02

100MHz

68nH

Murata

120nH

100nH

SDCL1005C33NJTDF 33nH

SDCL1005C68NJTDF 68nH

SDCL1005CR12JTDF 120nH

SDCL1005CR10JTDF 100nH

Sunlord

Table 10

CHOICE OF INDUCTOR

PART No.

TYP.

MFR

SIZE

0402

Voltage

25V

GRM1555C1H220JA01 22pF

GRM1555C1H390JA01 39pF

GRM155R71C473KA01 47nF

25V

Murata 0402

0402

16V

EN Control

AW5017 supports earphone. When baseband detects earphone inserting, GPIO will pull down, cutting off

AW5017 to avoid unnecessary power consumption.

Page14 of 18

AW5017DNR

Jan 2016

V1.2

When One-Line-Logic is enabled to change the capacitance of tunable capacitor to improve the voltage

gain at the input port, based equivalent diagram is shown as figure 26.

In operation frequency band of FM, short antenna can be approximated to series of open induced voltage

and equivalent inductor. Therefore, through tuning capacitance value in input port, the voltage gain can be

achieved in specified frequency. Meanwhile the receiver performance will be improved.

Gain=Vin/Vi

Short Antenna Model

Tunable Input Capacitor

Vin

68nH

33nH

Lant

47nF

100nH

Open Induced Voltage

68 nH

39pF

Cin

–

Figure 26

AW5017 Frequency Tuning Equivalent Schematic

In schematic, the value of tunable capacitor will be derived as following. f

boost

is FM operation frequency

，

eqq

is equivalent inductance of input port towards antenna side, which depends on the type and size of short

antenna, C

is tunable capacitance of input port.

boost



(Hz)



eqq



Figure 27 shows an example of voltage gain influenced by tunable capacitor. Blue and red curves are

voltage gain (equal to input voltage / open induced voltage) with maximum and minimum tunable capacitor,

respectively. The equivalent inductance of short antenna is 150nH.

-5

-10

-15

-20

frequency(MHz)

Figure 27

Voltage Gain with Different Tunable Capacitor

Page15 of 18

AW5017DNR

Jan 2016

V1.2

PACKAGE DESCRIPTION

Figure 28

Package outline

Page16 of 18

AW5017DNR

Jan 2016

V1.2

TAPE&REEL DESCRIPTION

2.0±0.05

＇

1.55±0.05

4.0±0.1

0.25±0.05

1.72±0.05

＇

REF 5°

Section B-B

＇

4.0±0.1

0.55±0.05

0.7±0.05

1.12±0.05

Section A-A

＇

Figure 29.

Tape and Reel

Page17 of 18

AW5017DNR

Jan 2016

V1.2

REVISION HISTORY

Table 1

evision history

Change notice

Document ID

Release date

Supersedes

Added Tape & Reel Description and corrected the

marking location of Pin1

AW5017_V1.2

2016-01

AW5017_V1.1

AW5017_V1.0

AW5017_V0.9

2015-12

2015-11

2014-12

Modified Marking A into B

Added matching capacitor C10

Preliminary data sheet

AW5017_V1.0

AW5017_V0.9

–

DISCLAIMER

Information in this document is believed to be accurate and reliable. However, Shanghai AWINIC Technology

Co., Ltd (AWINIC Technology) does not give any representations or warranties, expressed or implied, as to the

accuracy or completeness of such information and shall have no liability for the consequences of use of such

information.

AWINIC Technology reserves the right to make changes to information published in this document, including

without limitation specifications and product descriptions, at any time and without notice. Customers shall

obtain the latest relevant information before placing orders and shall verify that such information is current and

complete. This document supersedes and replaces all information supplied prior to the publication hereof.

AWINIC Technology products are not designed, authorized or warranted to be suitable for use in medical,

military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an AWINIC

Technology product can reasonably be expected to result in personal injury, death or severe property or

environmental damage. AWINIC Technology accepts no liability for inclusion and/or use of AWINIC

Technology products in such equipment or applications and therefore such inclusion and/or use is at the

customer’s own risk.

Applications that are described herein for any of these products are for illustrative purposes only. AWINIC

Technology makes no representation or warranty that such applications will be suitable for the specified use

without further testing or modification.

All products are sold subject to the general terms and conditions of commercial sale supplied at the time of

order acknowledgement.

Nothing in this document may be interpreted or construed as an offer to sell products that is open for

acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other

industrial or intellectual property rights.

Reproduction of AWINIC information in AWINIC data books or data sheets is permissible only if reproduction is

without alteration and is accompanied by all associated warranties, conditions, limitations, and notices.

AWINIC is not responsible or liable for such altered documentation. Information of third parties may be subject

to additional restrictions.

Resale of AWINIC components or services with statements different from or beyond the parameters stated by

AWINIC for that component or service voids all express and any implied warranties for the associated AWINIC

Page18 of 18

AW5017DNR

Jan 2016

V1.2

component or service and is an unfair and deceptive business practice. AWINIC is not responsible or liable for

any such statements.

Page19 of 18

AWINIC-Shanghai-Awinic-Tech-AW5017DNR

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