Axelite-Tech-AM9435SA

AM9435  

-30V P-Channel

 

Enhancement Mode MOSFET  

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DESCRIPTION  

■

FEATURE  

The AM9435 is the P-Channel logic enhancement  

mode power field effect transistors are produced  

using high cell density, DMOS trench technology.  

This high density process is especially tailored to  

minimize on-state resistance.  

‹

‹

-30V/-5.2A, R

DS(ON)

＜

60m

Ω

@V

GS

= -10V  

-30V/-4.0A, R

DS(ON)

＜

90m

Ω

@V

GS

= -4.5V  

‹

Super high density cell design for extremely low  

R

DS(ON)  

‹

Exceptional on-resistance and maximum DC  

current capability  

These devices are particularly suited for low voltage  

application, notebook computer power management  

and other battery powered circuits where high-side  

switching.  

‹

‹

Full RoHS compliance  

SOP-8 package design  

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APPLICATIONS  

‹

‹

‹

‹

‹

‹

‹

Power Management in Note book  

Portable Equipment  

Battery Powered System  

DC/DC Converter  

Load Switch  

DSC  

LCD Display inverter  

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PIN CONFIGURATION  

S S S  

Top View  

1

2

3

4

8

7

6

5

S

S

S

G

D

D

D

D

G

SOP-8  

D D

 

D D  

TOP VIEW  

SOP-8  

P-Channel  

1

Axelite Confidential Materials, do not copy or distribute without written consent

.  

Rev.1.1 May 19, 2016  

AM9435  

■

PART MARKING INFORMATION  

AM9435

X

– X  

Package  

S : SOP-8  

Packing  

Packing  

Blank : Tube  

A : Taping  

Package  

MARKING  

YY: Year Code

 

WW: Week Code  

A: Process Code  

AM9435  

YYWWA  

ORDERING INFORMATION  

■

Part Number  

Package Code  

Package  

SOP-8  

Shipping  

AM9435S-A  

S

2500 /Tape&Reel  

※

Year Code : 00 ~ 99  

※

Week Code : 01~52  

※

SOP-8 : Only available in tape and reel packaging.

 

(A reel contains 2500 devices)  

ABSOLUTE MAXIMUM RATINGS  

(T

A

= 25  

Unless otherwise noted )  

■

℃

Symbol  

V

DSS  

V

GSS  

I

D  

Parameter  

Typical  

-30  

Unit  

V

Drain-Source Voltage  

Gate-Source Voltage  

±20  

V

Continuous Drain Current (T

J

=150 )  

℃

V

GS

= -10V  

-5.2  

A

I

DM  

Pulsed Drain Current  

-20  

A

I

S  

Continuous Source Current (Diode Conduction)  

Operation Junction Temperature  

-2.4  

A

T

J  

-55~150  

-55~150  

℃

℃

T

STG  

Storage Temperature Range  

T

A

=25  

T

A

=70  

2.8  

1.8  

℃

℃

P

D  

Power Dissipation  

W

R

θ

JA  

Thermal Resistance-Junction to Ambient  

70  

℃

/W  

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.  

Absolute maximum ratings are stress ratings only and functional device operation is not implied.  

2

Axelite Confidential Materials, do not copy or distribute without written consent

.  

Rev.1.1 May 19, 2016  

AM9435  

ELECTRICAL CHARACTERISTICS  

(T

A

= 25

 

Unless otherwise noted )  

■

℃

Symbol  

Static Parameters  

Parameter  

Condition  

Min Typ Max Unit  

V

(BR)DSS  

V

GS(th)  

I

GSS  

Drain-Source Breakdown Voltage  

Gate Threshold Voltage  

V

GS

=0V,I

D

=-250

μ

A  

V

DS

=V

GS

,I

D

=-250

μ

A  

V

DS

=0V,V

GS

=±20V  

-30  

V

V

-1.0  

-3.0  

Gate Leakage Current  

±100 nA  

V

V

DS

=-30V,V

GS

=0V  

T

J

=55  

-1  

I

DSS  

Zero Gate Voltage Drain Current  

μ

A  

-5  

℃

I

D(ON)  

R

DS(ON)  

G

fs  

On-State Drain Current  

-25  

A

V

DS

≦

–

5V,V

GS

≦

-10V  

V

GS

=-10V,I

D

=-5.2A  

V

GS

=-4.5V, I

D

=-4.0A  

48  

74  

10  

60  

Drain-source On-Resistance  

Forward Transconductance  

m

Ω  

90  

V

DS

=-10V,I

D

=-5.2A  

I

S

=-2.0A,V

GS

=0V  

S

Source-Drain Doide  

Is  

Diode forward Current (Max.)  

Diode Forward Voltage  

2.6  

-0.8 -1.2  

A

V

V

SD  

Dynamic Parameters  

Q

g  

Total Gate Charge  

15  

4.0  

2.0  

680  

120  

75  

10  

V

DS

=-15V,V

GS

=-10V  

I

D

=-5.0A  

Q

gs  

Q

gd  

C

iss  

C

oss  

C

rss  

t

d(on)  

t

r  

Gate-Source Charge  

Gate-Drain Charge  

nC  

pF  

Input Capacitance  

V

DS

=-15V,V

GS

=0V  

f =1MHz  

Output Capacitance  

Reverse Transfer Capacitance  

7.0  

10  

15  

20  

80  

40  

Turn-On Time  

V

DD

=-15V,R

L

=15

Ω  

I

D

=-1.0A,V

GEN

=-10V  

R

G

=6

Ω  

nS  

t

d(off)  

40  

Turn-Off Time  

t

f  

20  

Note : 1. Pulse test: pulse width <= 300us, duty cycle<= 2%  

2. Static parameters are based on package level with recommended wire-bonding  

3

Axelite Confidential Materials, do not copy or distribute without written consent

.  

Rev.1.1 May 19, 2016  

AM9435  

■

TYPICAL CHARACTERISTICS

(25

℃

Unless Note)  

4

Axelite Confidential Materials, do not copy or distribute without written consent

.  

Rev.1.1 May 19, 2016  

AM9435  

■

TYPICAL CHARACTERISTICS

(25

℃

Unless Note)  

5

Axelite Confidential Materials, do not copy or distribute without written consent

.  

Rev.1.1 May 19, 2016  

AM9435  

SOP-8 PACKAGE DIMENSIONS  

■

6

Axelite Confidential Materials, do not copy or distribute without written consent

.  

Rev.1.1 May 19, 2016