baocheng-Shandong-Baocheng-Elec-BCC50N06
| Part # | baocheng-Shandong-Baocheng-Elec-BCC50N06 |
Download  | baocheng-Shandong-Baocheng-Elec-BCC50N06 |
50N06
60V N-Channel Power MOSFET
TO-263
TO-252
Features
⚫
Low FOM R
DS(on)
×
Q
gd
⚫
100% avalanche tested
⚫
Easy to use/drive
⚫
RoHS compliant
TO-251
TO-220
Drain
Applications
⚫
DC/DC Converter
⚫
Battery Protection Charge/Discharge
⚫
Load Switch
Gate
⚫
Synchronous Rectification
Source
Key Performance Parameters
Parameter
V
DS@ Tc=25
℃
R
DS(on),max@10V
R
DS(on),max@4.5V
Q
g,typ
Value
60
Unit
V
17
mΩ
mΩ
nC
A
23
40
I
D@Tc=25
℃
50
I
D,pulse
200
98
A
1)
E
AS
mJ
Device Marking and Package Information
Device
Package
TO-263
TO-252
TO-251
TO-220
Marking
E50N06
D50N06
H50N06
T50N06
BCE5N06
BCD5N06
BCH5N06
BCT5N06
1
50N06
60V N-Channel Power MOSFET
Absolute Maximum Ratings
T
A
= 25ºC, unless otherwise noted
Parameter
Symbol
Values
60
Unit
Drain-Source Voltage(V
GS
=0V)
V
DS
V
T
C
= 25ºC
50
Continuous Drain Current
2)
I
D
A
T
C
= 100ºC
32
Pulsed Drain Current
3)
Gate-Source Voltage
I
D,pulse
V
GSS
E
AS
200
A
V
±
20
98
Single Pulse Avalanche Energy
1)
Power Dissipation
mJ
W
ºC
P
D
62.5
-55~+150
Operating Junction and Storage Temperature Range
T
J,
T
stg
Thermal Resistance
Parameter
Symbol
R
thJC
Max.
2
Unit
ºC /W
ºC /W
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
R
thJA
62
Notes
1) L=0.5mH, V
DD
=30V, Start T
J
=25
℃
.
2) Limited by maximum junction temperature.
3) Repetitive Rating: Pulse width limited by maximum junction temperature.
2
50N06
60V N-Channel Power MOSFET
Electrical Characteristics
T
J
= 25ºC
, unless otherwise noted
Value
Typ.
Parameter
Symbol
Test Conditions
Unit
Min.
Max.
Static Characteristics
Drain-Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0V, I
D
= 250µA
60
—
—
—
—
1
V
V
DS
= 60V
V
GS
= 0V, T
J
= 25ºC
Zero Gate Voltage Drain Current
I
DSS
μA
V
DS
= 60V
V
GS
= 0V, T
J
= 125ºC
—
—
100
Gate-Source Leakage Current
Gate-Source Threshold Voltage
I
GSS
V
GS
=
±
20V
—
1.2
—
—
1.8
13.5
18
±
100
2.5
17
nA
V
V
GS(th)
V
DS
= V
GS
, I
D
= 250µA
V
GS
= 10V, I
D
= 20A
V
GS
= 4.5V, I
D
= 20A
f = 1.0MHz open drain
mΩ
mΩ
Ω
Drain-Source On-State-Resistance
R
DS(on)
—
23
Gate Resistance
R
G
—
1.4
—
Dynamic Characteristics
Input Capacitance
C
iss
C
oss
C
rss
Q
g
—
—
—
—
—
—
—
—
—
—
—
1889
113
92
—
—
—
—
—
—
—
—
—
—
—
V
GS
= 0V, V
DS
= 30V
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
pF
40
Gate-Source Charge
Gate-Drain Charge
Gate Plateau Voltage
Turn-on Delay Time
Turn-on Rise Time
Q
gs
Q
gd
V
Plateau
t
d(on)
t
r
7.8
8.3
3.7
13
nC
V
V
DS
= 30V, I
D
= 20A
V
GS
= 10V
25
V
DS
= 30V, V
GS
=10V
R
G
= 3
Ω, I
D
= 20A
ns
Turn-off Delay Time
Turn-off Fall Time
t
d(off)
t
f
60
9
Drain-Source Body Diode Characteristics
T
J
= 25ºC, I
SD
= 20A
V
GS
= 0V
Body Diode Forward Voltage
V
SD
—
—
1.2
V
Continuous Diode Forward Current
Reverse Recovery Time
I
S
t
rr
—
—
—
—
50
—
A
29
21
ns
nC
I
F
= 20A, di
F
/dt =
100A/
μs
Reverse Recovery Charge
Q
rr
—
3
50N06
60V N-Channel Power MOSFET
Typical Characteristics
T
J
= 25
º
C, unless otherwise noted
70
60
50
40
30
20
10
0
1000
100
10
Limited by R
DS(on)
DC
Single Pulse
T
C
=25
℃
T
J
=150
℃
1
0.1
0
25
50
75
100
125
150
0.1
1
10
100
T
C
, Case Temperature (
℃
)
V
DS
, Drain-to-Source Voltage (V)
Figure 1. Maximum Safe Operating Area
Figure 2. Maximum Power Dissipation vs
Case Temperature
60
50
40
30
20
10
0
60
50
40
30
20
10
0
10V
6V
4.0V
4.5V
3.5V
V
GS
=3.0V
0
1
2
3
25
50
75
100
125
150
V
DS
, Drain-to-Source Voltage (V)
T
C
, Case Temperature (
℃
)
Figure 3. Maximum Continuous Drain Current vs
Figure 4. Typical output Characteristics
Case Temperature
10
1
D = 1.0
0.1
0.01
D = 0.5
D = 0.2
D = 0.1
D = 0.05
D = 0.02
D = 0.01
Single Pulse
Notes:
1.Duty Cycle,
D=t1/t2
2.T
JM
= P
DM
*R
θ
JC
+ T
C
0.001
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
T, Rectangular Pulse Duration (s)
Figure 5. Maximum Effective Thermal Impedance, Junction to Case
4
50N06
60V N-Channel Power MOSFET
Typical Characteristics
T
J
= 25
º
C, unless otherwise noted
100
100
T
J
=150
℃
T
J
=150
℃
10
10
T
J
=25
℃
1
T
J
=25
℃
1
0.1
Note:
1.V
DS
=5V
2.250μs Pulsed Test
0.1
0.01
0.01
0.001
0.2
0.4
0.6
0.8
1
1.2
0
1
2
3
4
5
6
V
GS
, Gate-to-Source Voltage (V)
V
SD
, Source-to-Drain Voltage (V)
Figure 7. Typical Body Diode Transfer
Characteristics
Figure 6. Typical Transfer Characteristics
22
20
18
16
14
12
10
2
1.8
1.6
1.4
1.2
1
Pulsed Test
T
J
= 25
℃
V
GS
= 4.5V
0.8
0.6
0.4
Pulsed Test
V
GS
= 10V
I
D
= 20A
V
GS
= 10V
0
5
10
15
20
25
30
-50
0
50
100
150
T
J
, Junction Temperature (
℃
)
I
D
, Drain Current (A)
Figure 8. Drain-to-Source On Resistance vs
Drain Current
Figure 9. Normalized On Resistance vs
Junction Temperature
1.2
1.1
1
1.12
1.1
V
GS
= V
DS
I
D
= 250
μ
A
V
GS
= 0V
I
D
= 250
μ
A
1.08
1.06
1.04
1.02
1
0.9
0.8
0.7
0.6
0.98
0.96
0.94
0.92
-50
0
50
100
150
-50
0
50
100
150
T
J
, Junction Temperature (
℃
)
Figure 11. Normalized Breakdown Voltage vs
Junction Temperature
T
J
, Junction Temperature (
℃
)
Figure 10. Normalized Threshold Voltage vs
Junction Temperature
5
50N06
60V N-Channel Power MOSFET
Typical Characteristics
T
J
= 25
º
C, unless otherwise noted
10
10000
1000
100
V
DS
=30V
I
D
=20A
C
iss
8
6
4
C
oss
C
rss
2
V
GS
=0V, f=1MHz
10
0
0
20
40
60
0
10
20
30
40
50
V
DS
, Drain-to-Source Voltage (V)
Figure 12. Capacitance Characteristics
Qg, Gate Charge (nC)
Figure 13. Typical Gate Charge vs
Gate to Source Voltage
6
50N06
60V N-Channel Power MOSFET
Figure A
：
Gate Charge Test Circuit and Waveform
Figure B
：
Resistive Switching Test Circuit and Waveform
Figure C
：
Unclamped Inductive Switching Test Circuit and Waveform
7
50N06
60V N-Channel Power MOSFET
Outlines TO-263 Package
SYMBOL
MIN
4.4
NOM
4.5
0.1
2.4
—
MAX
4.6
A
A1
A2
b
0
0.25
2.6
2.2
0.76
0.75
1.23
1.22
0.47
0.46
1.25
9.1
0.89
0.85
1.37
1.32
0.6
b1
b2
b3
c
0.8
—
1.27
—
c1
c2
D
0.51
1.3
9.2
—
0.56
1.35
9.3
D1
E
8
—
9.8
9.9
10
—
E1
e
7.8
—
2.54 BSC
15.3
H
14.9
2
15.7
2.6
L
2.3
L1
L2
L3
L4
Ɵ
1.17
—
1.27
1.4
—
1.75
0.25 BSC
4.60 REF
—
0°
1°
8°
5°
Ɵ1
3°
8
50N06
60V N-Channel Power MOSFET
Outlines TO-252 Package
SYMBOL
MIN
2.2
NOM
2.3
—
MAX
2.4
A
A1
A2
b
0
0.2
0.9
1.035
—
1.17
0.9
0.645
5.13
0.43
0.41
5.98
5.244
6.4
b3
c
5.326
—
5.46
0.61
0.61
6.22
—
c2
D
—
6.1
—
D1
E
6.6
—
6.73
—
E1
e
4.63
2.186
9.4
2.286
10.04
1.5
2.872
0.509
—
2.386
10.5
1.75
3
H
L
1.38
2.6
L1
L2
L3
L4
L6
Ɵ
0.5
0.52
1.28
1
0.88
0.5
—
1.5
1.7
—
1.95
10
°
0
°
9
50N06
60V N-Channel Power MOSFET
Outlines TO-251 Package
SYMBOL
MIN
NOM
2.30
1.04
—
MAX
2.38
1.17
0.90
5.46
1.05
0.61
0.61
6.22
—
A
A1
b
2.20
0.90
0.56
5.20
—
b4
b5
c
5.33
—
0.43
0.43
5.98
5.2
—
c2
D
—
6.10
—
D1
E
6.40
4.60
2.24
4.47
16.18
9
6.60
—
6.73
—
E1
e
2.29
4.57
16.50
9.35
1.05
2.34
4.67
16.82
9.65
1.28
e1
H
L
L2
0.88
1
0
50N06
60V N-Channel Power MOSFET
Outlines TO-220 Package
SYMBOL
MIN
NOM
4.535
1.3
MAX
4.7
A
A1
A2
b
4.37
1.25
2.2
1.4
2.4
2.6
0.7
—
0.95
1.47
0.6
b1
c
1.17
0.45
15.1
8.8
—
0.5
D
15.65
9.15
—
16.1
9.4
D1
D2
E
11.8
9.7
—
9.95
—
10.3
—
E1
e
7
2.54 BSC
5.08 BSC
6.5
e1
H1
L
6.25
12.75
—
6.85
13.8
3.5
3.8
3
13.29
—
L1
ΦP
Q
3.4
3.67
—
2.6
1
1
