baocheng-Shandong-Baocheng-Elec-BCT4N65
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BCT4N65BCD4N65
N-channel 650V, 4A Power MOSFET
Description
Product Summary
The Power MOSFET is fabricated using the
advanced planar VDMOS technology. The
resulting device has low conduction resistance,
superior switching performance and high
avalance energy.
V
DSS
650V
I
D
4A
R
DS(on),max
Q
g,typ
2.70Ω
12 nC
Features
Low R
DS(on)
Low gate charge (typ. Q
= 12 nC)
g
TO-252
TO-220F
100% UIS tested
RoHS compliant
Applications
Power faction correction.
Pb
Switched mode power supplies.
LED driver.
N-Channel MOSFET
Absolute Maximum Ratings
Parameter
Symbol
Value
650
4
Unit
Drain-Source Voltage
V
DSS
V
A
A
( T
= 25°C )
C
I
D
Continuous drain current
( T
= 100°C )
C
2.5
1)
Pulsed drain current
I
DM
16
A
V
Gate-Source voltage
V
GSS
±30
2)
Avalanche energy, single pulse
E
AS
198
mJ
3)
Peak diode recovery dv/dt
dv/dt
5
V/ns
W
Power Dissipation
TO-220F ( T
= 25°C )
32
C
Derate above 25°C
Power Dissipation
0.26
W/°C
P
D
TO-252( T
= 25°C )
77
W
C
Derate above 25°C
Operating juncition and storage temperature range
Continuous diode forward current
Diode pulse current
0.61
W/°C
T
J
, T
STG
I
S
-55 to +150
°C
A
4
I
S,pulse
16
A
Thermal Characteristics
Value
TO-252
1.62
Parameter
Symbol
Unit
TO-220F
Thermal resistance, Junction-to-case
Thermal resistance, Junction-to-ambient
R
θJC
R
θJA
3.8
°C/W
°C/W
62.5
110
1
ShanDong Baocheng Electronics Co., Ltd
BCT4N65BCD4N65
Package Marking and Ordering Information
Device
Device Package
Marking
BCT4N65
BCD4N65
Units/Tube
Units/Real
BCT4N65
BCD4N65
TO-220F
50
TO-252
2500
Electrical Characteristics
Parameter
T
c
= 25°C unless otherwise noted
Symbol
Test Condition
Min.
Typ.
Max.
Unit
Static characteristics
V
V
V
=0 V, I
=0.25 mA
Drain-source breakdown voltage
Gate threshold voltage
BV
DSS
V
GS(th)
I
DSS
650
2
–
–
–
V
V
GS
DS
DS
D
=V ,
I =0.25
mA
4
GS
D
=650 V, V
=0 V,
Drain cut-off current
GS
T =
25°C
–
–
–
–
1
μA
nA
j
T =
125°C
j
100
100
V
=30 V, V
=0 V
DS
Gate leakage current, Forward
I
GSSF
–
GS
V
V
=-30 V, V
=0 V
Gate leakage current, Reverse
Drain-source on-state resistance
Dynamic characteristics
Input capacitance
I
GSSR
–
–
–
-100
2.70
nA
Ω
GS
GS
DS
=10 V, I
=2 A
R
DS(on)
2.50
D
V
= 25 V, V
= 0 V,
C
iss
C
oss
C
rss
t
d(on)
t
r
–
–
–
–
–
600
55
–
–
–
–
–
DS
GS
Output capacitance
f = 1 MHz
pF
ns
Reverse transfer capacitance
Turn-on delay time
3.2
12
V
= 325 V, I
= 4 A
DD
D
R
= 10 Ω, V
=15 V
Rise time
31
G
GS
Turn-off delay time
Fall time
t
d(off)
–
–
42
15
–
t
–
f
Gate charge characteristics
Gate to source charge
Gate to drain charge
Gate charge total
V
=520 V, I
=4 A,
Q
gs
Q
gd
–
–
–
–
3.2
5.1
12
6
–
–
–
–
DD
GS
D
V
V
=0 to 10 V
nC
V
Q
g
Gate plateau voltage
Reverse diode characteristics
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Peak reverse recovery current
Notes:
V
plateau
=0 V, I
=4 A
V
SD
t
rr
–
–
–
–
–
1.5
V
ns
μC
A
GS
F
V =400
V, I
=4 A,
282
1.4
10
–
–
–
R
F
dI /dt=100
A/μs
Q
rr
I
rrm
F
1. Pulse width limited by maximum junction temperature.
2. L=10mH, I
= 6.3A, Starting T = 25°C.
AS
j
3. I
= 4A, di/dt≤100A/us, V
≤BV ,
Starting T = 25°C.
SD
DD
DS
j
2
ShanDong Baocheng Electronics Co., Ltd
BCT4N65BCD4N65
Electrical Characteristics Diagrams
s
C
7
(
r
v
o
e
m
n
a
n
3
ShanDong Baocheng Electronics Co., Ltd
BCT4N65BCD4N65
c
a
G
A
TO-252
e
C
a
t
T
TO-252
4
ShanDong Baocheng Electronics Co., Ltd
BCT4N65BCD4N65
nt
a
1
D
e
2
n
=
)
TO-252
n
=
t
5
ShanDong Baocheng Electronics Co., Ltd
BCT4N65BCD4N65
Gate Charge Test Circuit & Waveform
Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
6
ShanDong Baocheng Electronics Co., Ltd
BCT4N65BCD4N65
Mechanical Dimensions for TO-220F
UNIT
：
mm
SYMBOL MIN
NOM
MAX
4.9
A
4.5
A1
b
2.3
2.9
0.65
1.1
0.9
b1
b2
c
1.7
1.2
1.4
0.35
14.5
6.1
0.65
16.5
6.9
D
D1
E
9.6
10.3
E1
e
6.5
2.44
12.5
9.45
15
7
7.5
2.54
2.64
14.3
10.05
16
L
L1
L2
L3
ΦP
Q
3.2
3
4.4
3.3
2.5
2.9
TO-220F Part Marking Information
7
ShanDong Baocheng Electronics Co., Ltd
BCT4N65BCD4N65
Mechanical Dimensions for TO-252
UNIT
：
mm
SYMBOL
MIN
2.10
0.80
0.50
0.50
0.45
0.45
6.35
5.10
NOM
MAX
2.50
1.25
0.85
0.90
0.60
0.60
6.75
5.50
A
B
b
b1
b2
C
D
D1
E
5.80
2.25
4.45
9.50
0.90
0.60
-0.1
6.30
2.35
4.75
10.20
1.45
1.10
0.10
e1
e2
L1
L2
L3
K
2.30
TO-252 Part Marking Information
8
ShanDong Baocheng Electronics Co., Ltd
