Bencent-BS61089B-8
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BS61089B-8
Order Code: BS61089B-8
Version: A4 2019-12-11
Thyristor Surge Suppresser
Exterior
Dual Voltage-Programmable transient suppressor
Wide programming range -20V to -155V
Low Gate Triggering Current:5mA MAX.
Holding current:150mA MIN.
Moisture sensitivity level
：
Level 1
SOP-8
Application information
Package (top view)
SLIC
`
Agency Approvals
Schematic Symbol
Icon
Description
Compliance with 2011/65/EU
Compliance withIEC61249-2-21:2003
Absolute Maximum Ratings
Rating
Repetitive peak off-state voltage ,V
GK
=0
Repetitive peak gate-cathode voltage ,V
KA
=0
Storage temperature range
Symbol
Value
-170
Unit
V
V
DRM
V
GKRM
Tstg
-167
V
-40 to 150
-40 to 150
℃
℃
Operating junction temperature
Tj
Non-repetitive peak on-state pulse current
5/320uS(ITU-TK.20/21/45,YD/T950,open-circuit voltage wave shape 10/700uS)
I
TSP
40
A
A
Non-repetitive peak on-state current ,60HZ
0.1S
1S
6.5
3.6
2.2
0.9
I
TSM
5S
300S
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications
BS61089B-8
Order Code: BS61089B-8
Version: A4 2019-12-11
Thyristor Surge Suppresser
Electrical parameters
Value
Typ
Symbol
Parameter
Test conditions
Unit
Min
Max
Parameters Related to The Diode
V
F
Forward voltage
IF=5A,tw=200uS
2/10uS
，
IF=100A
，
Rs=50
Ω，
di/dt=80A/uS
3
V
V
V
FRM
Peak forward recovery voltage
10
Parameters Related to The Diode
I
DRM
Off-state current
V
DRM
=-170V,V
GK
=0,Tj=25
℃
2/10uS,I
TM
=-100A,Rs=50
Ω
,
di/dt=-80A/uS, V
GG
=-100V
-5
uA
V
V
S
Switching voltage
-112
I
H
Holding current
Gate reverse current
Gate trigger current
Gate trigger voltage
Anode-cathode off-state
capacitance
IT=-1A,di/dt=1A/mS
，
V
GG
=-100V
V
GG
=V
GK
=-167V,V
KA
=0
，
Tj=25
℃
IT=-3A,tp(g)
≥
20uS,V
GG
=-100V
IT=-3A,tp(g)
≥
20uS,V
GG
=-100V
-150
mA
uA
mA
V
I
GAS
I
GT
-5
5
V
GT
2.5
C
AK
F=1MHz,Vd=1V
，
I
G
=0
，
V
D
=-3V
100
pF
Part Numbering System
Mark
BS
(1)
61089
(2)
B
8
( 3)
(4)
(1)Bencent Semiconductor Surge Arrester
(2)Product coder
：
61089
1309
(3) Peak Off-state voltage level : 170V
(4)8: 8 pins of the package
B61089B: Part Number
1309:September,2013
V-I Curve
Parameters
Definition
V
DRM
I
DRM
V
S
Peak Off-state Voltage
Off-state Current
Switching Voltage
Switching Current
Holding Current
On-state Voltage
On-state Current
Forward voltage
I
S
I
H
V
T
I
T
V
F
C
O
Off-state Capacitance
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications
BS61089B-8
Order Code: BS61089B-8
Version: A4 2019-12-11
Thyristor Surge Suppresser
Surge Ratings
Current Waveform
Voltage Waveform
Ipp
5/320
μ
s
10/1000
μ
s
10/1000
μ
s
30A
10/700
μ
s
40A
-Peak pulse current rating (I
PP
) is repetitive and guaranteed for the life of the product;
-Bencent only makes the test for 10/700
μ
s@1.6KV 40
Ω
* (5/320
μ
s@40A 40
Ω
), but for other IPP value derived from
experience is just for reference only. Bencent will not take any obligation for these parameters, so before applying our parts,
please make sure to verify the parameters listed in the above table.
Thermal Considerations
Product Characteristics
Symbol
Parameter
Value
Unit
Lead Material
Copper Alloy
Operating Junction
Temperature Range
UL recognized epoxy meeting
T
J
-40 to +150
℃
Body Material
fl
ammability classi
fi
cation 94V-0
Storage Temperature
Range
T
e
rminal Finish
100% Matte-Tin Plated
T
S
-60 to +150
℃
Environmental Characteristics
T
e
sting items
T
e
chnical standards
T
e
mperature: 125±3
℃
, Bias=80%V
DRM
Time:168H
High
T
e
mperature Reverse Bias Test
T
e
mperature: 150
℃
Time:168H
High
T
e
mperature Life
T
e
st
T
e
mperature:From -40
℃
to125
℃
Dwell time: 30min, 10-100 cycles
T
e
mperature: 85
℃
Humidity:85%
T
e
st time:168H
T
e
mperature: 121
℃
, 2atm. Humidity:100%
T
e
st time: 24H to 168H
High-low
T
e
mperature Cycle
T
e
st
High
T
e
mperature &High Humidity
T
e
st
Pressure Cooker
T
e
st
T
e
mperature: 260±5
℃
Time of dip soldering: 10s, 3times
Resistance of Soldering Heat
Note: The above testing items
can be specified by customer’s
special request
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications
BS61089B-8
Order Code: BS61089B-8
Version: A4 2019-12-11
Thyristor Surge Suppresser
Product Dimensions
REF
A
B
mm
inch
1.35~1.75
0.33~0.53
0.05~0.25
4.60~5.20
5.70~6.30
3.80~4.00
1.27BSC
0.053~0.069
0.013~0.021
0.002~0.010
0.181~0.25
0.224~0.248
0.150~0.157
0.050BSC
C
D
E
E1
e
c
0.15~0.25
0.30~1.30
0.006~0.010
0.012~0.051
L
Recommended Soldering Pad
REF
A
mm
1.52
0.6
4
inch
0.060
0.024
0.157
0.276
0.050
B
C
D
7
E
1.27
Reflow Profile
Reflow Condition
Temperature Min.
Pb-Free Assembly
+150°C
Pre Heat
Temperature Max.
Time(Min to Max)
+200°C
T
P
60
–
180 secs.
T
P
Critical Zone
T
L
to T
P
Average ramp up rate(Liquidus
Temp(T
L
) to peak)
3°C/sec. Max.
3°C/sec. Max.
+217°C
Ramp-up
T
L
T
L
T
S
(max)
to T
L
– Ramp-up Rate
–
T
emperature (T
L
)
max)
Ramp-down
(Liquidus)
Preheat
Reflow
–
T
emperature (T
L
)
60
–
150 secs.
T
S(min)
T
S
Peak Temp (T
P
)
+(260+0/-5 )°C
Time within 5°C of actual Peak
T
e
mp
(T
P
)
30 secs.
25
time to peak temperature
Time
Ramp-down Rate
6°C/sec. Max.
8 min. Max.
+260°C
Time 25°C to peak
T
e
mp (T
P
)
Do not exceed
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications
BS61089B-8
Order Code: BS61089B-8
Version: A4 2019-12-11
Thyristor Surge Suppresser
Package Reel Information
REF
A
mm
inch
6.40+/-0.20
5.40+/-0.20
1.50+0.1/-0
1.80+/-0.1
0.252+/-0.008
0.213+/-0.008
0.059+0.004/-0
0.71+/-0.004
12.992+/-0.079
3.937+/-0.118
0.512+/-0.020
0.069+/-0.004
0.217+/-0.008
0.315+/-0.008
0.157+/-0.008
0.079+/-0.008
0.472+/-0.008
0.492+/-0.039
B
d
C
D
330.00+/-2.00
100.00+/-3.00
13.00+/-0.50
1.75+/-0.10
5.50+/-0.20
8.00+/-0.20
4.00+/-0.20
2.00+/-0.20
12.00+/-0.20
12.50+/-1.00
D1
D2
E
F
P
P0
P1
W
W1
REEL
DIAMETERS
(mm)
CARTON SIZE(mm)
REEL
OUTLINE
PER CARTON
(PCS)
(PCS)
L
W
H
TAPING
4000
64000
330
360
360
380
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications
