BL-Shanghai-Belling-BL3N150-B
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BL3N150
Power MOSFET
1
．
Description
BL3N150, the silicon N-channel Enhanced
MOSFETs, is obtained by advanced MOSFET
technology which reduce the conduction loss,
improve switching performance and enhance the
avalanche energy. The transistor is suitable
device for SMPS, high speed switching and
general purpose applications.
KEY CHARACTERISTICS
Parameter
V
DS
I
D
Value
1500
3
Unit
V
A
R
DS(ON).Typ
FEATURES
5.8
Ω
TO-3PN
TO-263
TO-220F
Fast Switching
Low Crss
100% avalanche tested
Improved dv/dt capability
RoHS product
APPLICATIONS
High frequency switching mode power supply
TO-220
TO-247
TO-3PF
ORDERING INFORMATION
Ordering Codes
BL3N150-P
BL3N150-A
BL3N150-W
BL3N150-K
BL3N150-F
BL3N150-B
Package
Product
3N150
Packing
Tube
Tube
Tube
Tube
Tube
Reel
TO-220
TO-220F
TO-3PN
TO-3PF
TO-247
TO-263
BL3N150-A
XXXX
：
Product Code
(2) Package
type
(1) Chip
name
XXXX
YYWW ZZ
SSSSS
YYW
W
：
Year&Week
ZZ
：
Assembly Code
SSSSS
：
Lot Code
(1)BL3N150:1500V 3A
(2) A:TO-220F
P:TO-220 W:TO-3PN
K:TO-3PF F:TO-247 B
：
TO-263
BL3N150
Rev 1.0
8/2020
1/ 17
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©2011 Belling All Rights Reserved
BL3N150
Power MOSFET
2
．
ABSOLUTE RATINGS
at T
C
= 25°C, unless otherwise specified
Symbol Parameter
Rating
Units
Drain-to-Source Voltage
V
DSS
1500
3
V
A
Continuous Drain Current
I
D
Continuous Drain Current T
C
= 100 °C
1.7
12
A
Pulsed Drain Current(Note1)
I
DM
A
Gate-to-Source Voltage
V
GS
±30
450
5.0
V
Single Pulse Avalanche Energy(Note2)
E
AS
mJ
V/ns
Peak Diode Recovery dv/dt(Note3)
dv/dt
Power Dissipation
TO-220, TO-3PN, TO-247,TO-263
140
W
W/
℃
W
P
D
Derating Factor above 25°C
1.1
Power Dissipation
TO-220F, TO-3PF
62.5
P
D
Derating Factor above 25°C
0.5
150
，
–
55 to 150
300
W/
℃
℃
Operating Junction and Storage Temperature Range
Maximum Temperature for Soldering
T
J
，
T
stg
T
L
℃
3
．
Thermal characteristics
Thermal characteristics (No FullPAK) TO-220TO-3PNTO-247TO-263
Symbol Parameter
RATINGS
0.89
Units
Junction-to-Case
R
θJC
℃
/W
℃
/W
Junction-to-Ambient
R
θJA
62.5
Thermal characteristics (FullPAK) TO-220FTO-3PF
Symbol Parameter
RATINGS
Units
℃
/W
℃
/W
Junction-to-Case
R
θJC
2
Junction-to-Ambient
R
θJA
62.5
BL3N150
Rev 1.0
8/2020
2/ 17
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BL3N150
Power MOSFET
4
．
Electrical Characteristics
at T
C
= 25°C, unless otherwise specified
OFF Characteristics
Values
Test
Conditions
Symbol
Parameter
Units
V
Min.
Typ.
Max.
Drain to Source
Breakdown Voltage
V
GS
=0V,
I
D
=250µA
V
DSS
1500
—
—
ID=250uA,
Reference25
℃
Bvdss Temperature
Coefficient
V/
℃
ΔBV
DSS
/ΔT
J
—
—
1.2
—
—
V
DS
=1500V,
V
GS
= 0V,
Tj = 25
℃
µA
µA
10
Drain to Source Leakage
Current
I
DSS
V
DS
=1200V,
V
GS
= 0V,
Tj = 125
℃
—
—
500
Gate to Source Forward
Leakage
Gate to Source Reverse
Leakage
V
GS
=+30V
V
GS
=-30V
nA
nA
I
GSS(F)
I
GSS(R)
—
—
—
—
100
100
ON Characteristics
Values
Test
Conditions
Symbol
Parameter
Units
Min.
Typ.
Max.
Drain-to-Source On-
Resistance
VGS=10V,
ID=1.5A(Note4)
R
DS(ON)
V
GS(TH)
—
5.8
—
8
Ω
VDS = VGS,
ID = 250µA(Note4)
Gate Threshold Voltage
3.0
5.0
V
Dynamic Characteristics
Values
Typ.
Symbol
Parameter
Test Conditions
Units
Min.
Max.
Gate resistance
f = 1.0MHz
R
g
—
3
—
Ω
Input Capacitance
Output Capacitance
C
iss
C
oss
— 1450 —
VGS = 0V
VDS = 25V
f = 1.0MHz
—
—
87.5
4.7
—
—
PF
Reverse Transfer
Capacitance
C
rss
BL3N150
Rev 1.0
8/2020
3/ 17
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BL3N150
Power MOSFET
Switching Characteristics
Values
Units
Symbol
Parameter
Test Conditions
Min.
—
Typ.
25
46
45
60
36
11
14
Max.
Turn-on Delay Time
Rise Time
t
d(ON)
tr
t
d(OFF)
t
f
—
ID =1.25A
VDD = 750V
VGS = 10V
RG =5
Ω
—
—
ns
Turn-Off Delay Time
Fall Time
—
—
—
—
Total Gate Charge
Gate to Source Charge
Gate to Drain (“Miller”)Charge
Q
g
—
—
ID =3A
VDD =1000V
VGS = 10V
Q
gs
Q
gd
—
—
nC
—
—
Source-Drain Diode Characteristics
Values
Typ.
Test
Conditions
Symbol
Parameter
Units
Min.
—
Max.
3
Continuous Source Current (Body
Diode)
Maximum Pulsed Current (Body
Diode)
I
S
—
—
—
A
A
V
TC=25 °C
I
SM
V
SD
—
12
1.2
IS=3A,
VGS=0V(Note4)
Diode Forward Voltage
—
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
405
2400
11.8
T
rr
IS=2.5A,
Tj = 25°C
dIF/dt=100A/us,
VGS=0V
—
—
—
—
—
—
ns
nC
A
Q
rr
I
rrm
Note1: Pulse width limited by maximum junction temperature
Note2: IDS=2.5A, VDD=50V, Start TJ=25
℃
Note3: ISD =3A
,di/dt ≤100A/us,VDD≤BVDS, Start TJ=25
℃
Note4:
Pulse width tp≤300µs, δ≤2%
BL3N150
Rev 1.0
8/2020
4/ 17
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BL3N150
Power MOSFET
5.
Characteristics Curves
Figure 1a Safe Operating Area (No FullPAK)
Figure 1b Safe Operating Area (FullPAK)
Figure 2a Power Dissipation (No FullPAK)
Figure 2b Power Dissipation (FullPAK)
BL3N150
Rev 1.0
8/2020
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BL3N150
Power MOSFET
Figure 3a Max Thermal Impendance (No FullPAK)
Figure 3b Max Thermal Impendance (FullPAK)
Figure 4 Typical Output Characteristics
Figure 5 Typical Transfer Characteristics
BL3N150
Rev 1.0
8/2020
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BL3N150
Power MOSFET
Figure 6 Typical Drain to Source ON Resistance
vs Drain Current
Figure 7 Typical Drian to Source on Resistance
vs Junction Temperature
Figure 8 Typical Theshold Voltage vs Junction
Temperature
Figure 9 Typical Breakdown Voltage vs Junction
Temperature
BL3N150
Rev 1.0
8/2020
7/ 17
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BL3N150
Power MOSFET
Figure 10
Typical Capacitance vs Drain to
Source Voltage
Figure 11 Typical Gate Charge vs Gate to Source
Voltage
BL3N150
Rev 1.0
8/2020
8/ 17
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BL3N150
Power MOSFET
6. Test Circuit and Waveform
Figure 12 Gate Charge Test Circuit
Figure 13 Gate Charge Waveforms
Figure 14 Resistive Switching Test Circuit
Figure 15 Resistive Switching Waveforms
BL3N150
Rev 1.0
8/2020
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BL3N150
Power MOSFET
Figure 16 Diode Reverse Recovery Test Circuit
Figure 17 Diode Reverse Recovery Waveform
Figure 18 Unclamped Inductive Switching Test Circuit
Figure 19 Unclamped Inductive Switching Waveform
BL3N150
Rev 1.0
8/2020
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BL3N150
Power MOSFET
7.
Package Description
C
A
D
ΦP
G
C1
F
E
N
N
Values(mm)
Items
MIN
MAX
10.4
A
B
9.60
15.4
8.90
4.30
2.10
2.40
0.60
0.30
1.12
16.2
9.50
4.90
3.00
3.00
1.00
0.60
1.42
B1
C
C1
D
E
F
G
3.40
1.60
12.0
3.80
2.90
14.0
H
L
N
Q
2.34
3.15
2.90
2.74
3.55
3.30
TO-220F
Package
BL3N150
Rev 1.0
8/2020
11/ 17
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BL3N150
Power MOSFET
Values(mm)
Items
MIN
MAX
10.6
A
B
9.60
15.0
8.90
4.30
2.30
1.20
0.70
0.30
1.17
2.70
12.6
2.34
2.40
3.50
16.0
9.50
4.80
3.10
1.40
0.90
0.60
1.37
3.80
14.8
2.74
3.00
3.90
B1
C
C1
D
E
F
G
H
L
N
Q
TO-220
Package
BL3N150
Rev 1.0
8/2020
12/ 17
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BL3N150
Power MOSFET
Values(mm)
Items
MIN
15.00
MAX
A
B
C
D
16.00
20.60
5.00
19.20
4.60
1.40
1.60
E
F
0.90
0.50
2.00
3.00
3.00
1.20
2.70
19.00
5.25
3.10
1.10
0.70
2.20
3.20
3.70
1.70
2.90
21.00
5.65
3.30
G1
G2
H
I
L
N
TO-3PN Package
BL3N150
Rev 1.0
8/2020
13/ 17
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BL3N150
Power MOSFET
TO-3PF Package
BL3N150
Rev 1.0
8/2020
14/ 17
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BL3N150
Power MOSFET
Values(mm)
Items
MIN
4.6
MAX
5.2
A
A1
B
2,2
0.9
2.6
1.4
B1
B2
B3
B4
C
1.75
1.75
2.8
2.35
2.15
3.35
3.15
0.7
2.8
0.5
D
20.60
16
21.30
18
D1
E
15.5
13
16.10
14.7
5.3
E1
E2
E3
e
3.80
0.8
2.60
5.7
5.2
L
19
20.5
4.6
L1
Φ
P
Q
3.9
3.3
3.70
6.00
6.6
5.2
S
5.8
TO-247 Package
BL3N150
Rev 1.0
8/2020
15/ 17
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BL3N150
Power MOSFET
C
A
D
I
G
E
F
N
N
Values(mm)
Items
MIN
MAX
A
B
9.80
8.90
0
10.40
9.50
0.10
4.80
1.37
0.95
0.60
1.47
1.80
1.37
B1
C
4.40
1.16
0.70
0.30
1.07
1.30
0.95
14.50
1.60
0
D
E
F
G
H
K
L1
L2
I
16.50
2.30
0.2
Q
R
0
°
8
°
0.4
N
2.39
2.69
TO-263 Package
BL3N150
Rev 1.0
8/2020
16/ 17
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BL3N150
Power MOSFET
NOTE:
Exceeding the maximum ratings of the device in performance may cause damage to the device, even
the permanent failure, which may affect the dependability of the machine. Please do not exceed the
absolute maximum ratings of the device when circuit designing.
1.
When installing the heat sink, please pay attention to the torsional moment and the smoothness
of the heat sink.
2.
MOSFETs is the device which is sensitive to the static electricity, it is necessary to protect the
device from being damaged by the static electricity when using it.
3.
Shanghai Belling reserves the right to make changes in this specification sheet and is subject to
change without prior notice.
CONTACT:
上海贝岭股份有限公司（总部）
地址：上海市宜山路
810
号
邮编：
200233
电话：
021-24261000
产品业务咨询及技术支持
电话：
021-24261326
传真：
021-64852222
上海贝岭深圳分公司（华南区）
地址：深圳市福田中心区民田路新华保险大厦
1510
室
邮编：
518031
电话：
0755-33336776 0755-33336770
传真：
0755-33336788
上海贝岭北京办事处（华北区）
地址：北京市西城区新华里
16
号院锦官苑小区
10
号楼
1
单元
1505
室
邮编：
100044
电话：
010-64179374
传真：
010-8835 9236
BL3N150
Rev 1.0
8/2020
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©2011 Belling All Rights Reserved
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