BL-Shanghai-Belling-BLM2305
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Pb Free Product
BLM2305
P-Channel
Enhancement Mode Power MOSFET
Description
D
The BLM2305 uses advanced trench technology to provide
excellent R
DS(ON)
, low gate charge and operation with gate
voltages as low as 2.5V. This device is suitable for use as a
load switch or in PWM applications.
G
S
Schematic diagram
General Features
●
V
DS
= -20
V
,
I
D
= -4.1A
R
DS(ON)
<75
mΩ @ V
GS
=-2.5V
R
DS(ON)
< 52
mΩ @ V
GS
=-4.5V
●
High power and current handing capability
●
Lead free product is acquired
●
Surface mount package
Marking and pin assignment
Application
●
PWM applications
●
Load switch
●
Power management
SOT-23 top view
Tape width
Package Marking and Ordering Information
Device Marking
Device
Device Package
Reel Size
Quantity
3000 units
2305
BLM2305
SOT-23
Ø180mm
8 mm
Absolute Maximum Ratings (T
A
=25
℃
unless otherwise noted)
Parameter
Symbol
Limit
-20
Unit
Drain-Source Voltage
Gate-Source Voltage
V
V
V
DS
±12
V
GS
T
C
=25
℃
T
C
=70
℃
T
A
=25
℃
T
A
=70
℃
-4.1
-3.2
Continuous Drain Current
Drain Current -Pulsed
(Note 1)
A
I
D
-3
-2.3
-15
A
I
DM
P
D
Maximum Power Dissipation
1.7
W
℃
Operating Junction and Storage Temperature Range
-55
T
o
1
50
T
J
,T
STG
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient
(Note 2)
R
θJA
74
℃
/W
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Pb Free Product
BLM2305
Electrical Characteristics (T
A
=25
℃
unless otherwise noted)
Parameter
Symbol
Condition
Min Typ
Max
Unit
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
On Characteristics
(Note 3)
BV
DSS
I
DSS
V
GS
=0V I
D
=-250
μA
V
DS
=-20V,V
GS
=0V
V
GS
=±12V,V
DS
=0V
-20
–
–
–
–
V
–
–
-1
μA
nA
I
GSS
±100
Gate Threshold Voltage
V
GS(th)
R
DS(ON)
g
FS
V
DS
=V
GS
,I
D
=-
250μA
V
GS
=-4.5V, I
D
=-4.1A
V
GS
=-2.5V, I
D
=-3A
V
DS
=-5V,I
D
=-2A
-0.45 -0.7
-1.0
52
75
–
V
43
58
–
–
–
Drain-Source On-State Resistance
mΩ
Forward Transconductance
Dynamic Characteristics
(Note4)
Input Capacitance
6
S
C
lss
C
oss
C
rss
–
–
–
740
290
190
–
–
–
PF
PF
PF
V
DS
=-4V,V
GS
=0V,
F=1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
(Note 4)
Turn-on Delay Time
t
d(on)
t
r
t
d(off)
t
f
–
–
–
–
–
–
–
12
35
–
–
–
–
–
–
–
nS
nS
nS
nS
nC
nC
nC
Turn-on Rise Time
V
DD
=-4V,I
D
=-3.3A ,
R
L
=-1.2
Ω
,V
GEN
=-4.5V,R
g
=1
Ω
Turn-Off Delay Time
30
Turn-Off Fall Time
10
Total Gate Charge
Q
g
Q
gs
Q
gd
7.8
1.2
1.6
Gate-Source Charge
V
DS
=-4V,I
D
=-4.1A,V
GS
=-4.5V
V
GS
=0V,I
S
=-4.1A
Gate-Drain Charge
Drain-Source Diode Characteristics
Diode Forward Voltage
(Note 3)
Diode Forward Current
(Note 2)
V
SD
I
S
–
–
–
–
-1.2
-4.1
V
A
Notes:
1.
Repetitive Rating: Pulse width limited by maximum junction temperature.
2.
Surface M
ounted on FR4 Board, t ≤ 10 sec.
3.
Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4.
Guaranteed by design, not subject to production
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Pb Free Product
BLM2305
Typical Electrical and Thermal Characteristics
t
on
t
r
t
off
t
f
t
d(on)
V
OUT
V
IN
t
d(off)
90%
90%
INVERTED
10%
90%
10%
50%
50%
10%
PULSE WIDTH
Figure 1:Switching Test Circuit
Figure 2:Switching Waveforms
T
J
-Junction
T
e
mperature(
℃
)
T
J
-Junction
T
e
mperature(
℃
)
Figure 3 Power Dissipation
Figure 4 Drain Current
Vds Drain-Source Voltage (V)
I
D
– Drain Current (A)
Figure 5 Output Characteristics
Figure 6 Drain-Source On-Resistance
Page 3
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Pb Free Product
BLM2305
Vgs Gate-Source Voltage (V)
T
J
-Junction
T
e
mperature(
℃
)
Figure 7 Transfer Characteristics
Figure 8 Drain-Source On-Resistance
Vgs Gate-Source Voltage (V)
Vds Drain-Source Voltage (V)
Figure 9 Rdson vs Vgs
Figure 10 Capacitance vs Vds
Qg Gate Charge (nC)
Vsd Source-Drain Voltage (V)
Figure 11 Gate Charge
Figure 12 Source- Drain Diode Forward
Page 4
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Pb Free Product
BLM2305
Vds Drain-Source Voltage (V)
Figure 13 Safe Operation Area
Square Wave Pluse Duration(sec)
Figure 14 Normalized Maximum Transient Thermal Impedance
Page 5
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Pb Free Product
BLM2305
SOT-23 Package Information
Dimensions in Millimeters
Symbol
MIN.
MAX.
1.150
A
A1
A2
b
0.900
0.000
0.900
0.300
0.080
2.800
1.200
2.250
0.100
1.050
0.500
c
0.150
D
3.000
E
1.400
E1
e
2.550
0.950TYP
2.000
e1
L
1.800
0.550REF
0.500
L1
θ
0.300
0°
8°
Notes
1. All dimensions are in millimeters.
2. Tolerance ±0.10mm (4 mil) unless otherwise specified
3. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 5 mils.
4. Dimension L is measured in gauge plane.
5. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact.
Page 6
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