BL-Shanghai-Belling-BLM4953
| Part # | BL-Shanghai-Belling-BLM4953 |
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Pb Free Product
BLM4953
P-Channel
Enhancement Mode Power MOSFET
DESCRIPTION
D1
D2
The BLM4953 uses advanced trench technology to prov
ide
excellent R
DS(ON)
, low gate charge and operation with gate
voltages as low as 4.5V. This device is suitable for use as a
load switch or in PWM applications.
G1
G2
S1
S2
Schematic diagram
GENERAL FE
A
T
URES
●
V
DS
= -30
V
,
I
D
= -5.1A
R
DS(ON)
< 105m
ꢀ
@ V
GS
=-4.5V
R
DS(ON)
< 55m
ꢀ
@ V
GS
=-10V
●
High Power and current handing capability
●
Lead free product is acquired
●
Surface Mount Package
Marking and pin Assignment
Application
●
PWM applications
●
Load switch
SOP-8 top view
●
Power management
Package Marking And Ordering Information
Device Marking
Device
Device Package
Reel Size
Tape width
Quantity
4953
BLM4953
SOP-8
Ø330mm
12mm
2500 units
Absolute Maximum Ratings (TA=25
℃
unless otherwise noted)
Parameter Symbol
Limit
-30
Unit
V
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
V
DS
±20
-5.1
-20
V
V
GS
A
I
D
Drain Current-Pulsed
(Note 1)
A
I
DM
P
D
Maximum Power Dissipation
2.5
W
℃
Operating Junction and Storage Temperature Range
-55
T
o
1
50
T
J
,T
STG
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note 2)
R
θ
JA
50
℃
/W
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Pb Free Product
BLM4953
Electrical Characteristics (TA=25
℃
unless otherwise noted)
Parameter
Symbol
Condition
Min Typ
Max
Unit
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
On Characteristics (Note 3)
Gate Threshold Voltage
BV
DSS
I
DSS
V
GS
=0V I
D
=-250
ꢁ
A
V
DS
=-24V,V
GS
=0V
V
GS
=±20V,V
DS
=0V
-30
-33
–
V
–
–
–
–
-1
ꢁ
A
nA
I
GSS
±100
V
GS(th)
R
DS(ON)
g
FS
V
DS
=V
GS
,I
D
=-250
ꢁ
A
V
GS
=-10V, I
D
=-5.1A
V
GS
=-4.5V, I
D
=-4.2A
V
DS
=-15V,I
D
=-4.5A
-1
–
-1.6
48
73
7
-3
55
105
–
V
m
ꢀ
m
ꢀ
S
Drain-Source On-State Resistance
–
Forward Transconductance
Dynamic Characteristics (Note4)
Input Capacitance
4
C
lss
C
oss
C
rss
–
–
–
520
130
70
–
–
–
PF
PF
PF
V
DS
=-15V,V
GS
=0V,
F=1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics (Note 4)
Turn-on Delay Time
t
d(on)
t
r
t
d(off)
t
f
–
–
–
–
–
–
–
15
13
58
21
12
2.2
3
–
–
–
–
–
–
–
nS
nS
nS
nS
nC
nC
nC
Turn-on Rise Time
V
DD
=-15V, ID=-1A,
V
GS
=-10V,R
GEN
=6
ꢀ
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Q
g
V
DS
=-15V,I
D
=-5.3A,V
GS
=-10V
V
GS
=0V,I
S
=-1.7A
Gate-Source Charge
Q
gs
Q
gd
Gate-Drain Charge
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
V
SD
–
–
-1.2
V
Notes:
1.
Repetitive Rating: Pulse width limited by maximum junction temperature.
2.
Surface Mounted on FR4 Board, t
≤
10 sec.
3.
Pulse Test: Pulse Width
≤
300
ꢁ
s, Duty Cycle
≤
2%.
4.
Guaranteed by design, not subject to production
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Pb Free Product
BLM4953
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
t
on
t
r
t
off
t
f
t
d(on)
t
d(off)
90%
90%
V
OUT
INVERTED
10%
90%
10%
50%
V
IN
50%
10%
PULSE WIDTH
Figure 1:Switching Test Circuit
Figure 2:Switching Waveforms
T
J
-Junction
T
e
mperature(
℃
)
T
J
-Junction
T
e
mperature(
℃
)
Figure 3 Power Dissipation
Figure 4 Drain Current
Vds Drain-Source Voltage (V)
I
D
– Drain Current (A)
Figure 5 Output CHARACTERISTICS
Figure 6 Drain-Source On-Resistance
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Pb Free Product
BLM4953
Vgs Gate-Source Voltage (V)
T
J
-Junction
T
e
mperature(
℃
)
Figure 7 Transfer Characteristics
Figure 8 Drain-Source On-Resistance
Vgs Gate-Source Voltage (V)
Vds Drain-Source Voltage (V)
Figure 9 Rdson vs Vgs
Figure 10 Capacitance vs Vds
Qg Gate Charge (nC)
Vsd Source-Drain Voltage (V)
Figure 11 Gate Charge
Figure 12 Source- Drain Diode Forward
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Pb Free Product
BLM4953
Vds Drain-Source Voltage (V)
Figure 13
Safe Operation Area
Square Wave Pluse Duration(sec)
Figure 14 Normalized Maximum Transient Thermal Impedance
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