BL-Shanghai-Belling-BLM7002K

Pb Free Product  

BLM7002K  

N-Channel

Enhancement Mode Power MOSFET  

General Features  

●

V

DS

= 60

V

,

I

D

= 0.3A  

R

DS(ON)

< 3

Ω

@ V

GS

=5V  

R

DS(ON)

< 2

Ω

@ V

GS

=10V  

ESD Rating

：

HBM 2300V  

●

High power and current handing capability  

●

Lead free product is acquired  

●

Surface mount package  

Schematic diagram  

Application  

●

Direct logic-level interface: TTL/CMOS  

●

Drivers: relays, solenoids, lamps, hammers,display,  

memories, transistors, etc.  

Marking and pin assignment  

●

Battery operated systems  

●

Solid-state relays  

SOT-23 top view  

Tape width  

Package Marking And Ordering Information  

Device Marking  

Device  

Device Package  

Reel Size  

Quantity  

3000 units  

7002K  

BLM7002K  

SOT-23  

Ø180mm  

8 mm  

Absolute Maximum Ratings (TA=25

℃

unless otherwise noted)  

Parameter  

Symbol  

V

DS  

Limit  

60  

Unit  

Drain-Source Voltage  

Gate-Source Voltage  

V

V

±20  

V

GS  

T

A

=25

℃  

0.3  

Continuous Drain Current (T

J

=150

℃

)  

A

I

D  

T

A

=100

℃  

0.19  

Drain Current-Pulsed

 

(Note 1)  

Maximum Power Dissipation  

0.8  

A

I

DM  

P

D  

0.35  

W

℃

Operating Junction and Storage Temperature Range  

-55

T

o

1

50  

T

J

,T

STG  

Thermal Characteristic  

Thermal Resistance,Junction-to-Ambient (Note 2)  

R

θ

JA  

350  

℃

/W  

Page1  

V2.0  

Pb Free Product  

BLM7002K  

Electrical Characteristics (TA=25

℃

unless otherwise noted)  

Parameter  

Symbol  

Condition  

Min Typ  

Max  

Unit  

Off Characteristics  

Drain-Source Breakdown Voltage  

Zero Gate Voltage Drain Current  

BV

DSS  

I

DSS  

V

GS

=0V I

D

=250

μ

A  

V

DS

=60V,V

GS

=0V  

V

GS

=±10V,V

DS

=0V  

60  

–

68  

–

–

V

1

μ

A  

nA  

uA  

–

±100  

±4  

±500  

±10  

Gate-Body Leakage Current  

I

GSS  

V

GS

=±20V,V

DS

=0V  

–

On Characteristics (Note 3)  

Gate Threshold Voltage  

V

GS(th)  

R

DS(ON)  

g

FS  

V

DS

=V

GS

,I

D

=250

μ

A  

V

GS

=5V, I

D

=0.4A  

V

GS

=10V, I

D

=0.5A  

V

DS

=10V,I

D

=0.2A  

1

–

1.7  

1.3  

1

2.5  

3

V

Ω

Ω

S

Drain-Source On-State Resistance  

–

2

Forward Transconductance  

Dynamic Characteristics (Note4)  

Input Capacitance  

0.1  

–

–

C

lss  

C

oss  

C

rss  

–

–

–

21  

11  

50  

25  

5

PF  

PF  

PF  

V

DS

=25V,V

GS

=0V,  

F=1.0MHz  

Output Capacitance  

Reverse Transfer Capacitance  

Switching Characteristics (Note 4)  

Turn-on Delay Time  

4.2  

t

d(on)  

t

r  

t

d(off)  

t

f  

–

–

–

–

10  

50  

17  

10  

–

–

–

–

nS  

nS  

nS  

nS  

Turn-on Rise Time  

V

DD

=30V,I

D

=0.2A  

V

GS

=10V,R

GEN

=10

Ω  

Turn-Off Delay Time  

Turn-Off Fall Time  

V

Total Gate Charge  

Q

g  

–

1.7  

3

nC  

V

GS

=4.5V  

Drain-Source Diode Characteristics  

Diode Forward Voltage (Note 3)  

Diode Forward Current (Note 2)  

V

SD  

I

S  

V

GS

=0V,I

S

=0.2A  

–

–

–

–

1.3  

0.2  

V

A

Notes:  

1.

Repetitive Rating: Pulse width limited by maximum junction temperature.  

2.

Surface Mounted on FR4 Board, t

≤

10 sec.  

3.

Pulse Test: Pulse Width

≤

300

μ

s, Duty Cycle

≤

2%.  

4.

Guaranteed by design, not subject to production  

Page2  

V2.0  

Pb Free Product  

BLM7002K  

Typical Electrical And Thermal Characteristics  

Vdd  

t

on  

t

r  

t

off  

t

f  

t

d(on)  

t

d(off)  

Rl  

Vin  

90%  

90%  

D

Vout  

Vgs  

V

OUT  

INVERTED  

Rgen  

10%  

90%  

G

10%  

50%  

S

V

IN  

50%  

10%  

PULSE WIDTH  

Figure 1:Switching Test Circuit  

Figure 2:Switching Waveforms  

Vds Drain-Source Voltage (V)  

Vgs Gate-Source Voltage (V)  

Figure 3 Output Characteristics  

Figure 4 Transfer Characteristics  

I

D

– Drain Current (A)  

Vgs Gate-Source Voltage (V)  

Figure 5 Drain-Source On-Resistance  

Figure 6 Rdson vs Vgs  

Page3  

V2.0  

Pb Free Product  

BLM7002K  

Qg Gate Charge (nC)  

Vsd Source-Drain Voltage (V)  

Figure 7 Gate Charge  

Figure 8 Source-DrainDiode Forward  

T

J

-Junction

T

e

mperature(

℃

)  

Vds Drain-Source Voltage (V)  

Figure 9 Drain-Source On-Resistance  

Figure 10

 

Safe Operation Area  

Vds Drain-Source Voltage (V)  

Figure 11 Capacitance vs Vds  

Page4  

V2.0  

Pb Free Product  

BLM7002K  

Square Wave Pluse Duration(sec)  

Figure 12 Normalized Maximum Transient Thermal Impedance  

Page5  

V2.0  

Pb Free Product  

BLM7002K  

SOT-23-3L Package Information  

Dimensions in Millimeters  

Symbol  

MIN.  

0.900  

0.000  

0.900  

0.300  

0.080  

2.800  

1.200  

2.250  

MAX.  

1.150  

0.100  

1.050  

0.500  

0.150  

3.000  

1.400  

2.550  

A

A1  

A2  

b

c

D

E

E1  

e

0.950TYP  

0.550REF  

e1  

L

1.800  

2.000  

L1  

θ

0.300  

0°  

0.500  

8°  

Notes  

1. All dimensions are in millimeters.  

2. Tolerance ±0.10mm (4 mil) unless otherwise specified  

3. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 5 mils.  

4. Dimension L is measured in gauge plane.  

5. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact.  

Page6  

V2.0