BL-Shanghai-Belling-BLM8205
| Part # | BL-Shanghai-Belling-BLM8205 |
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Pb Free Product
BLM8205
N-Channel
Enhancement Mode Power MOSFET
D1
D2
Description
The BLM8205 uses advanced trench technology to provide
excellent R
DS(ON)
, low gate charge and operation with gate
voltages as low as 2.5V. This device is suitable for use as a
Battery protection or in other Switching application.
G1
G2
S1
Schematic diagram
S2
General Features
●
V
DS
= 19.5
V
,
I
D
= 4A
Typ.R
DS(ON)
= 21m
Typ.R
DS(ON)
= 27m
Ω
@ V
GS
=4.5V
@ V
GS
=2.5V
Ω
●
●
●
High Power and current handing capability
Lead free product is acquired
Surface Mount Package
Marking and pin Assignment
Application
●
●
●
Battery protection
Load switch
Power management
SOT23-6L top view
Package Marking And Ordering Information
Device Marking
Device
Device Package
Reel Size
Tape width
Quantity
3000 units
8205
BLM8205
SOT23-6L
Ø180mm
8mm
Absolute Maximum Ratings (TA=25
℃
unless otherwis
e
n
oted)
Parameter Symbol
Limit
19.5
±8
Unit
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
V
V
A
A
V
DS
V
GS
I
D
4
Drain Current-Pulsed (Note 1)
25
I
DM
Maximum Power Dissipation
1.25
W
P
D
℃
Operating Junction and Storage Temperature Range
-55 To 150
T
J
,T
STG
Thermal Characteristic
℃
/W
Thermal Resistance,Junction-to-Ambient (Note 2)
R
θJA
100
Electrical Characteristics (TA=25
℃
unless otherwis
e
n
oted)
Parameter
Symbol
Condition
Min Typ
Max
Unit
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
BV
DSS
I
DSS
V
GS
=0V I
D
=250µA
V
DS
=19.5V,V
GS
=0V
19.5
–
21
–
–
V
1
µA
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V2.2
Pb Free Product
BLM8205
Gate-Body Leakage Current
On Characteristics (Note 3)
Gate Threshold Voltage
I
GSS
V
GS
=±8V,V
DS
=0V
–
–
±100
nA
V
GS(th)
R
DS(ON)
g
FS
V
DS
=V
GS
,I
D
=250µA
V
GS
=4.5V, I
D
=4A
V
GS
=2.5V, I
D
=3A
V
DS
=5V,I
D
=4A
0.45
0.7
21
27
10
1.2
27
40
–
V
–
–
–
mΩ
mΩ
S
Drain-Source On-State Resistance
Forward Transconductance
Dynamic Characteristics (Note4)
Input Capacitance
C
lss
C
oss
C
rss
–
–
–
800
155
125
–
–
–
PF
PF
PF
V
DS
=8V,V
GS
=0V,
F=1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics (Note 4)
Turn-on Delay Time
t
d(on)
t
r
t
d(off)
t
f
–
–
–
–
–
–
–
18
5
–
–
–
–
–
–
–
nS
nS
nS
nS
nC
nC
nC
Turn-on Rise Time
V
DD
=10V,I
D
=1A
V
GS
=4V,R
GEN
=10Ω
Turn-Off Delay Time
43
20
11
2.3
2.5
Turn-Off Fall Time
Total Gate Charge
Q
g
Q
gs
Q
gd
V
DS
=10V,I
D
=4A,
V
GS
=4.5V
Gate-Source Charge
Gate-Drain Charge
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
Diode Forward Current (Note 2)
V
SD
I
S
V
GS
=0V,I
S
=2A
–
–
1.3
2
V
A
–
Notes:
1.
Repetitive Rating: Pulse width limited by maximum junction temperature.
2.
Surface Mounted on FR4 Board, t ≤ 10 sec.
3.
Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
4.
Guaranteed by design, not subject to production
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V2.2
Pb Free Product
BLM8205
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
Vdd
t
on
t
r
t
off
t
f
t
d(on)
t
d(off)
Rl
Vin
90%
90%
D
Vout
Vgs
V
OUT
INVERTED
Rgen
10%
90%
G
10%
50%
S
V
IN
50%
10%
PULS
E
W
IDTH
Figure 1:Switching Test Circuit
Figure 2:Switching Waveforms
T
J
-Junction Temperature(
℃
)
T
J
-Junction Temperature(
℃
)
Figure 3 Power Dissipation
Figure 4 Drain Current
Vds Drain-Source Voltage (V)
I
D
– Drain Current (A)
Figure 6 Drain-Source On-Resistance
Figure 5 Output CHARACTERISTICS
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Pb Free Product
BLM8205
T
J
-Junction Temperature(
℃
)
Vgs Gate-Source Voltage (V)
Figure 8 Drain-Source On-Resistance
Figure 7 Transfer Characteristics
Vds Drain-Source Voltage (V)
Vgs Gate-Source Voltage (V)
Figure 10 Capacitance vs Vds
Figure 9 Rdson vs Vgs
Vsd Source-Drain Voltage (V)
Qg Gate Charge (nC)
Figure 12 Source- Drain Diode Forward
Figure 11 Gate Charge
Page4
V2.2
Pb Free Product
BLM8205
Vds Drain-Source Voltage (V)
Figure 13
Safe Operation Area
Square Wave Pluse Duration(sec)
Figure 14 Normalized Maximum Transient Thermal Impedance
Page5
V2.2
