BL-Shanghai-Belling-BLM8205A

Pb Free Product  

BLM8205A  

N-Channel  

Enhancement Mode Power MOSFET  

D1  

D2  

Description  

The BLM8205A uses advanced trench technology to provide  

excellent R

DS(ON)

, low gate charge and operation with gate  

voltages as low as 2.5V. This device is suitable for use as a  

Battery protection or in other Switching application.  

G1  

G2  

S1  

S2  

Schematic diagram  

General Features  

●

V

DS

= 19.5

V

,

I

D

= 6A  

Typ.R

DS(ON)

= 21m

Ω

@ V

GS

=4.5V  

Typ.R

DS(ON)

= 27m

Ω

@ V

GS

=2.5V  

●

High Power and current handing capability  

●

Lead free product is acquired  

●

Surface Mount Package  

Marking and pin Assignment  

Application  

●

Battery protection  

●

Load switch  

●

Power management  

TSSOP-8 top view  

Package Marking And Ordering Information  

Device Marking  

Device  

Device Package  

Reel Size  

Tape width  

Quantity  

3000 units  

8205A  

BLM8205A  

TSSOP-8  

Ø330mm  

12mm  

Absolute Maximum Ratings (TA=25

℃

unless otherwise noted)  

Parameter Symbol  

Limit  

19.5  

±10  

6

Unit  

Drain-Source Voltage  

Gate-Source Voltage  

Drain Current-Continuous  

V

V

V

DS  

V

GS  

I

D  

A

Drain Current-Pulsed (Note 1)  

25  

A

I

DM  

Maximum Power Dissipation  

1.5  

W

℃

P

D  

Operating Junction and Storage Temperature Range  

-55

T

o

1

50  

T

J

,T

STG  

Thermal Characteristic  

Thermal Resistance,Junction-to-Ambient (Note 2)  

R

θ

JA  

83  

℃

/W  

Electrical Characteristics (TA=25

℃

unless otherwise noted)  

Parameter  

Symbol  

Condition  

Min Typ  

Max  

Unit  

Off Characteristics  

Drain-Source Breakdown Voltage  

Zero Gate Voltage Drain Current  

BV

DSS  

I

DSS  

V

GS

=0V I

D

=250

μ

A  

19.5  

–

21  

–

–

V

V

DS

=19.5V,V

GS

=0V  

1

μ

A  

Page 1  

V2. 1  

Pb Free Product  

BLM8205A  

Gate-Body Leakage Current  

On Characteristics (Note 3)  

Gate Threshold Voltage  

I

GSS  

V

GS

=±10V,V

DS

=0V  

–

–

±100  

nA  

V

GS(th)  

R

DS(ON)  

g

FS  

V

DS

=V

GS

,I

D

=250

μ

A  

V

GS

=4.5V, I

D

=4.5A  

V

GS

=2.5V, I

D

=3.5A  

V

DS

=5V,I

D

=4.5A  

0.5  

0.7  

21  

27  

10  

1.2  

27  

37  

–

V

–

–

–

m

Ω  

m

Ω  

S

Drain-Source On-State Resistance  

Forward Transconductance  

Dynamic Characteristics (Note4)  

Input Capacitance  

C

lss  

C

oss  

C

rss  

–

–

–

600  

330  

140  

–

–

–

PF  

PF  

PF  

V

DS

=8V,V

GS

=0V,  

F=1.0MHz  

Output Capacitance  

Reverse Transfer Capacitance  

Switching Characteristics (Note 4)  

Turn-on Delay Time  

t

d(on)  

t

r  

t

d(off)  

t

f  

–

–

–

–

–

–

–

10  

11  

35  

30  

10  

2.3  

1.5  

20  

25  

70  

60  

15  

–

nS  

nS  

nS  

nS  

nC  

nC  

nC  

Turn-on Rise Time  

V

DD

=10V,I

D

=1A  

V

Turn-Off Delay Time  

Turn-Off Fall Time  

Total Gate Charge  

Q

g  

Q

gs  

Q

gd  

V

Gate-Source Charge  

V

Gate-Drain Charge  

–

Drain-Source Diode Characteristics  

Diode Forward Voltage (Note 3)  

Diode Forward Current (Note 2)  

V

SD  

I

S  

V

GS

=0V,I

S

=1.7A  

–

–

0.75  

–

1.2  

1.7  

V

A

Notes:  

1.

Repetitive Rating: Pulse width limited by maximum junction temperature.  

2.

Surface Mounted on FR4 Board, t

≤

10 sec.  

3.

Pulse Test: Pulse Width

≤

300

μ

s, Duty Cycle

≤

2%.  

4.

Guaranteed by design, not subject to production  

Page 2  

V2. 1  

Pb Free Product  

BLM8205A  

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS  

Vdd  

t

on  

t

r  

t

off  

t

f  

t

d(on)  

t

d(off)  

Rl  

Vin  

90%  

90%  

D

Vout  

Vgs  

V

OUT  

INVERTED  

Rgen  

10%  

90%  

G

10%  

50%  

S

V

IN  

50%  

10%  

PULSE WIDTH  

Figure 1:Switching Test Circuit  

Figure 2:Switching Waveforms  

T

J

-Junction

T

e

mperature(

℃

)  

T

J

-Junction

T

e

mperature(

℃

)  

Figure 3 Power Dissipation  

Figure 4 Drain Current  

Vds Drain-Source Voltage (V)  

I

D

– Drain Current (A)  

Figure 5 Output CHARACTERISTICS  

Figure 6 Drain-Source On-Resistance  

Page 3  

V2. 1  

Pb Free Product  

BLM8205A  

Vgs Gate-Source Voltage (V)  

T

J

-Junction

T

e

mperature(

℃

)  

Figure 7 Transfer Characteristics  

Figure 8 Drain-Source On-Resistance  

Vgs Gate-Source Voltage (V)  

Vds Drain-Source Voltage (V)  

Figure 9 Rdson vs Vgs  

Figure 10 Capacitance vs Vds  

Qg Gate Charge (nC)  

Vsd Source-Drain Voltage (V)  

Figure 11 Gate Charge  

Figure 12 Source- Drain Diode Forward  

Page 4  

V2. 1  

Pb Free Product  

BLM8205A  

Vds Drain-Source Voltage (V)  

Figure 13

 

Safe Operation Area  

Square Wave Pluse Duration(sec)  

Figure 14 Normalized Maximum Transient Thermal Impedance  

Page 5  

V2. 1  

Pb Free Product  

BLM8205A  

TSSOP-8 PACKAGE INFORMATION  

Dimensions In Millimeters  

Symbol  

Min  

Max  

D

E

b

c

E1  

A

A2  

A1  

e

L

H

2.900  

4.300  

0.190  

0.090  

6.250  

3.100  

4.500  

0.300  

0.200  

6.550  

1.100  

1.000  

0.150  

0.800  

0.020  

0.65(BSC)  

0.25(TYP)  

0.500  

1°  

0.700  

7°  

Θ

Page 6  

V2. 1