BORN-2N7002
| Part # | BORN-2N7002 |
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2N7002
ROHS
MOSFET
N-Channel Enhancement-Mode
MOSFET
SOT
–
–
2
3
Features
60V/0.2A,
R
DS(ON)
= 7.5
(MAX) @V
GS
= 10
V
.
I
d = 0.5A
Ω
DS(ON)
= 7.5
(MAX) @V
GS
= 5V . Id = 0.05A
R
Ω
Super High dense cell design for extremely low R
DS(ON) .
Reliable and Rugged.
SO
T
–
23 for Surface Mount Package.
MAXIMUM RANTINGS
Parameter
Drain-Source
V
o
ltage
Symbol
V
DS
Limit
60
Units
V
V
A
Gate-Source
V
o
ltage
V
GS
±
20
0.2
Drain Current-Continuous
Power Dissipation
I
D
P
D
0.225
556
W
℃
/W
T
h
ermal
R
e
sistance f rom
J
u
ncti
n
o to Ambient
J
u
nction
T
e
mperature
R
θ
JA
150
T
J
℃
T
stg
Storage
T
e
mperature
-50~+150
Electrical Characteristics
Parameter
Off Characteristics
Symbol
T
e
st Conditions
Min
Typ.
Max
Units
Drain to Source Breakdown
V
o
ltage
Zero-Gate
V
o
ltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
BVDSS
IDSS
VGS=0
V
,
I
D=250µA
VDS=60
V
,
V
GS=0V
VGS=20
V
,
V
DS=0V
VGS=-20
V
,
V
DS=0V
60
–
–
–
–
–
–
V
1
µA
nA
IGSSF
IGSSR
–
100
-100
–
nA
On Characteristics
Gate Threshold
V
o
ltage
Static Drain-source
VGS(th)
VGS= VDS, ID=250
µ
A
VGS =10
V
,
I
D =0.5A
VGS =5
V
,
I
D =0.05A
1
–
–
V
Ω
Ω
7.5
7.5
RDS(ON)
*
On-Resistance
–
Drain-Source Diode Characteristics and Maximum Ratings
Drain-Source Diode Forward
V
o
ltage
VSD
VGS =0
V
,
I
S=0.2A
2.5
V
Notes :
*Pulse Test : Pulse Width
≤
300µs, Duty Cycle
≤
2%.
Page 1 of 3
Rev 8: Nov 2014
2N7002
ROHS
MOSFET
N-Channel Enhancement-Mode
MOSFET
0.6
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
VGS=4
，
4.5
，
5
，
6
，
7
，
8
～
10V
0.5
0.4
0.3
0.2
0.1
0
VGS=3V
Tj
＝
125
℃
Tj
＝
25
℃
VGS=2.0V
0
1
2
VDS,Drain-to-Source Voltage(Volts)
3
4
5
0
1
2
3
4
5
VGS,Gate-to-Source Voltage(Volts)
Figure 1
．
Output Characteristics
Figure 2
．
Transfer Characteristics
1.7
72
71
70
69
68
67
66
65
64
63
62
ID=250uA
I
D=250uA
1.6
1.5
1.4
1.3
1.2
1.1
0
50
Tj.Junction Temperature(℃)
100
150
200
0
50
Tj.Junction Temperature(℃)
100
150
200
Figure 3
．
Breakdown Voltage Variation
Figure 4
．
Gate Threshold
V
a
riation
with
T
e
mperature
with
T
e
mperature
9
10
9
8
7
8
7
6
10V/0.5A
6
VGS=4.5V
5
4
5
4
VGS=10V
4.5V/0.2A
3
3
2
1
0
2
1
0
0
50
100
150
200
0
0.2
0.4
0.6
0.8
1
Figure 5
．
O
n
T
–
j
R
.
J
e
u
s
n
i
c
s
t
t
i
a
o
n
n
c
T
e
e
m
p
V
e
r
a
a
r
t
i
u
a
r
e
t
(
i
o
℃
n
)
Figure 6
．
O
n
I
–
D
R
–
D
e
r
s
a
i
i
s
n
t
a
C
u
n
r
c
r
e
e
n
t
v
(
s
A
.
)
Drain Current
with Temperature
Page 2 of 3
Rev 8: Nov 2014
2N7002
ROHS
MOSFET
N-Channel Enhancement-Mode
MOSFET
12
10
8
10
Tj
＝
150
℃
6
1
ID=0.5A
4
Tj
＝
25
℃
ID=0.2A
2
0
0.1
0
2
4
6
8
10
0
0.5
1
1.5
2
2.5
VGS,Gate-to-Source Voltage(Volts)
VSD-Source-to-Drain Voltage(V)
Figure 7
．
On-Resistance vs. Gate-to-Source
Figure 8
．
Source-Drain Diode Forward
V
o
ltage
V
o
ltage
SO
T
–
23 PACKAGE
OUTLINE
Plastic surface mounted package
SOT-23
(UNIT)
：
mm
Page 3 of 3
Rev 8: Nov 2014
