BORN-2SC2412
| Part # | BORN-2SC2412 |
| Download | BORN-2SC2412 |
2SC2412
N
PN Plastic-Encapsulate Transistor
»
Feature
s
»
Pin Configurations
V
CE
=
5
0V
3 COLLECTOR
I
C
=
0.
15
A
f
T
=300MHZ
@
V
CE
=
12
V
,
I
C
=
2
mA,
f=
100MHz
1 BASE
2 EMITTER
»
General Description
Excellent hFE linearity, Complementary
pair with 2SA1037AK.
Epitaxial planar die constructio
SOT-23
Plastic
Package.
Absolute Maximum Ratings
@T
A
=25
℃
unless otherwise noted
»
Symbol
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Value
Units
V
V
CBO
V
CEO
V
EBO
I
C
60
50
V
7
V
Collector Current -Continuous
T
o
tal Device Dissipation
Thermal Resistance Junction to Ambient
Junction
T
e
mperature
150
mA
mW
℃
/W
℃
P
C
225
R
θJA
T
J
625
150
T
stg
Storage
T
e
mperature
-55 to +150
℃
Revision 2018
1 /
4
2SC2412
Electrical Characteristics
@T
A
=25
℃
unless otherwise noted
»
Parameter
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
Test
conditions
MIN
60
50
7
MAX
UNIT
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off
current
I
C
= 50
μ
A, I
E
=0
I
C
= 1mA, I
B
=0
I
E
=50
μ
A, I
C
=0
V
CB
=60
V
,
I
E
=0
V
V
0.1
50
μ
A
nA
μ
A
Collector cut-off
current
I
CEX
V
CE
=30
V
,
V
BE(off)
=3V
Emitter cut-off
current
I
EBO
V
EB
=
7
V
,
I
C
=0
0.1
h
FE
V
CE
=6
V
,
I
C
=1mA
120
560
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
V
CE(sat)
V
BE(sat)
f
T
I
C
=50mA, I
B
= 5mA
0.4
1.0
V
V
I
C
= 100mA, I
B
= 10mA
300
MHz
pF
V
CE
=12
V
,
I
C
=2m
A
,
f=
100MHz
V
CE
=12
V
,
I
C
=0m
A
,
f=
100MHz
Collector Output Capacitance
2.0
3.0
Cob
CLASSIFICATION OF
h
FE(1)
Rank
Q
R
S
Range
270~560
120~270
180~390
Revision 2018
2
/
4
2SC2412
»
Typical Performance Characteristics
(
(TJ = 25 °C, unless otherwise noted)
)
Revision 2018
3
/
4
2SC2412
»
Package Information
SOT-23
»
Ordering information
Order code
Package
SOT-23
Base qty
Deliverymode
Tape an
d
reel
Marking
2SC2412
BR
3
K
Revision 2018
4
/
4
