BORN-2SC2712
| Part # | BORN-2SC2712 |
Download  | BORN-2SC2712 |
2SC2712
N
PN Plastic-Encapsulate Transistor
»
Feature
s
»
Pin Configurations
V
CE
=
5
0V
3 COLLECTOR
I
C
=
150m
A
=
80
MHZ
@
V
CE
=
6
V
,
I
C
=10mA
f
T
1 BASE
2 EMITTER
»
General Description
3
Complementary to 2SA1162
Epitaxial planar die constructio
SOT-23
Plastic
Package
1
2
Absolute Maximum Ratings
@T
A
=25
℃
unless otherwise noted
»
Symbol
Parameter
Value
Unit
V
V
CBO
V
CEO
V
EBO
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
60
50
5
V
V
I
C
150
mA
mW
℃
P
Collector Power Dissipation
150
C
T
,T
Operation Junction And Storage
T
e
mperature Range
-55
～
+150
J
stg
Electrical Characteristics
@T
A
=25
℃
unless otherwise noted
»
Symbol
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Test conditions
I =100µA,
I =0
Min
60
50
5
Typ
Max
Unit
V
V
V
V
(BR)CBO
(BR)CEO
(BR)EBO
C
E
I =1mA,
I =0
V
C
B
I =100µA,
I =0
V
E
C
I
V
=60V, I
=0
100
100
700
0.25
1.0
nA
nA
CBO
CB
E
I
Emitter cut-off current
V
=5V, I
=0
C
EBO
EB
h
FE
DC current gain
V
=6V, I
=2mA
70
80
CE
C
V
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
0.1
V
V
CE(sat)
BE(sat)
I =100mA,
I =10mA
C
B
V
f
T
V
=10V, I
=10mA
MHz
pF
CE
C
Cob
Output capacitance
V
=10V, I
=0,f=1 MHz
2.0
1.0
3.5
10
CB
E
V
=6V,I =0.1mA,
CE
C
NF
Noise Figure
dB
f=1kHz, Rg=10kΩ
Revision 2018
1 /
4
2SC2712
»
Typical Performance Characteristics
（
(TJ = 25 °C, unless otherwise noted)
）
Revision 2018
2
/
4
2SC2712
»
Package Information
SOT-23
MILLIMETER
SYMBOL
MIN.
0.9
0
0.02
–
Typ
1.00
0.06
0.60
2.90
0.40
2.40
1.30
1.90
0.40
–
MAX
1.10
0.10
–
A
A1
A2
D
2.85
0.37
2.35
1.25
1.85
0.35
0
2.95
0.43
2.45
1.35
1.95
0.48
6
◦
b
E
E1
e
L
θ
»
H
FE
Classifications & Marking
h
FE
7
0
～
1
4
0
1
20
～
2
4
0
200
～
400
3
5
0
～
7
00
Marking
L
O
L
G
L
L
L
Y
»
Ordering information
Order code
Package
Base qty
3K
Deliver
y
m
ode
2SC2712
SO
T-23
Tape and reel
Revision 2018
4
/
4
