BORN-2SK3018

Part #	BORN-2SK3018
Download	BORN-2SK3018

2SK301

8

N

-Channel MOSFET

»

Features

3

●

V

DS (V)

= 30V

1.GATE

2.SOURCE

3.DRAIN

●

I

D

= 0.1 A

2

●

R

DS(ON)

＜

8

Ω

(V

GS

= 4V)

1

●

R

DS(ON)

＜

13

Ω

(V

GS

= 2.5V)

»

Simplified outline(SOT-23)

Drain

»

Marking

Marking

KN

Gate

Gate

Protection

Diode

Source

Equivalent circuit

»

MAXIMUM RATINGS (Ta = 25°C unless otherwise noted)

Parameter

Drain-Source Voltage

Symbol

Rating

30

Unit

V

V

DS

GS

Gate-Source Voltage

Continuous Drain Current

Pulsed Drain Current

Power Dissipation

V

±

20

100

I

D

mA

mW

℃

(Note.1)

I

DM

400

P

D

200

Junction Temperature

T

J

150

Storage Temperature Range

T

stg

-55 to 150

Note.1: PW

≤

10us, Duty Cycle

≤

1%

»

ELECTRICAL CHARACTERISTICS

(Ta=25

℃

unless otherwise spe

c

ified)

Parameter

Symbol

Test Conditions

D

=250

μ

A, V

GS

=0V

Min

30

Typ

Max

Unit

V

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate-Body Leakage Current

Gate Threshold Voltage

V

DSS

I

I

DSS

GSS

V

V

V

V

V

V

^{DS
=30V, V
GS
=0V}

1

±

1

1.5

8

uA

uA

V

I

^{DS
=0V, V
GS
=
±
20V}

V

GS(th)

^{DS
=3V , I}

^{GS
=4V, I}

^{GS
=2.5V, I}

^{DS
=3V, I =10mA}

D

=0.1mA

=10mA

=1mA

0.8

20

D

Static Drain-Source On-Resistance

R

DS(O

n

)

Ω

D

13

Forward Transconductance

Input Capacitance

g

FS

iss

oss

rss

d(on)

D

mS

C

13

9

V

^{GS
=0V, V
DS
=5V, f=1MHz}

pF

Output Capacitance

Reverse Transfer Capacitance

Turn-On DelayTime

Turn-On Rise Time

C

C

4

t

15

35

80

80

t

r

V

^{GS
=5V, V
DS
=5V,}

=10mA,R =500

Ω

,R

G

=10

Ω

ns

I

D

L

Turn-Off DelayTime

Turn-Off Fall Time

t

d(off)

t

f

Revision 2018

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2SK3018

»

Typical Characterisitics

0.15

200m

100m

2

1.5

1

V

^DS
=3V

=0.1mA

V

^DS
=3V

4V

3V

I

D

Pulsed

Ta=25

°

C

Pulsed

Pulsed

50m

3.5V

20m

10m

5m

0.1

0.05

0

2.5V

2V

2m

1m

Ta=125

°

C

75

°

C

25

°

C

−

25

°

C

0.5

0

0.5m

0.2m

0.1m

V

^GS
=1.5V

3

−

50

−

25

0

25

50

75 100

125 150

0

1

2

4

5

3

0

1

2

4

CHANNEL TEMPERATURE

: Tch (

°

C

)

DRAIN-SOURCE VOLTAGE

: V

DS

(V)

GATE-SOURCE VOLTAGE

: V

GS

(V)

Fig.1 Typical

output characteristics

Fig.3 Gate

threshold voltage vs.

channel temperature

Fig.2 Typical

transfer characteristics

50

15

10

5

50

V

^GS
=4V

Ta=25

°

C

Pulsed

V

^GS
=2.5V

Pulsed

Pulsed

Ta=125

°

C

75

°

C

25

°

C

−

25

°

C

Ta=125

°

C

20

10

5

20

10

5

75

°

C

25

°

C

−

25

°

C

2

2

I

D

=0.1A

1

1

I

D

=0.05A

0.5

0.001 0.002

0.5

0.001 0.002

0

0.005

0.01

0.02

0.05

0.1

0.2

0.5

0.005

0.01

0.02

0.05

0.1

0.2

0.5

0

5

10

15

20

DRAIN CURRENT

: I

D

(A)

DRAIN CURRENT

: I

D

(A)

GATE-SOURCE VOLTAGE

: V

GS

(V)

Fig.5 Static

drain-source on-state

Fig.4 Static

drain-source on-state

Fig.6 Static

drain-source

on-state resistance vs.

gate-source voltage

resistance vs. drain current (

Ι

Ι

)

resistance vs.

drain current (

Ι

)

9

200m

V

^GS
=4V

0.5

V

^DS
=3V

V

^GS
=0V

Pulsed

8

7

Pulsed

Pulsed

100m

50m

0.2

Ta=

−

25

°

C

25

°

C

75

°

C

125

°

C

I

D

=100mA

0.1

6

5

4

3

2

1

20m

Ta=125

°

C

0.05

I

D

=50mA

10m

5m

75

°

C

25

°

C

−

25

°

C

0.02

0.01

2m

1m

0.005

0.5m

0.002

0.001

0.2m

0.1m

0

−

50

−

25

0

25

50

75 100

125

150

0.0001 0.0002

0.0005 0.001

0.002

0.005

0.01

0.02

0.05

0.1

0.2

0.5

0

0.5

1

1.5

CHANNEL TEMPERATURE

: Tch (

°

C)

DRAIN CURRENT

: I

D

(A)

SOURCE-DRAIN VOLTAGE

: V

SD

(V)

Fig.7 Static

drain-source on-state

resistance vs. channel

temperature

Fig.8 Forward

transfer

Fig.9 Reverse drain current vs.

admittance vs. drain current

source-drain voltage

(

Ι

)

Revision 2018

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/

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2SK3018

»

Typical Characterisitics

1000

500

50

2

0

0m

Ta

=25

°

C

Ta=25

°

C

Pulsed

t

f

Ta

=25

°

C

f=1MH

^GS
=0V

V

V

^DD
=5V

^GS
=5V

100m

50m

Z

t

d(off)

V

20

10

5

R

G

=10

Ω

200

100

Pulsed

C

iss

20m

10m

5m

V

^GS
=4V

0V

50

t

r

C

oss

2m

1m

20

10

5

t

d(on)

C

rss

2

0.5m

1

0.2m

0.1m

0.5

0.1

0.2

2

0.1 0.2

0.5

1

2

5

10 20 50

100

0.5

1

2

5

10

20

50

0

0.5

1

1.5

DRAIN CURRENT

: I

D

(mA)

DRAIN-SOURCE VOLTAGE

: V

DS

(V)

SOURCE-DRAIN VOLTAGE

: V

SD

(V)

Fig.11 Typical

capacitance vs.

drain-source voltage

Fig.12 Switching

characteristics

Fig.10 Reverse drain current vs.

(See Figures 13 and 14 for

the measurement circuit

and resultant waveforms)

source-drain voltage

(

ΙΙ

)

Pulse width

50%

90%

50%

V

GS

DS

10%

V

GS

I

D

V

DS

10%

R

L

V

D.U.T.

10%

90%

R

G

V

DD

90%

t

d(on)

t

r

t

f

t

d(off)

t

off

t

on

Fig.14 Switching

time waveforms

Fig.13 Switching

time measurement

circuit

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2SK3018

»

Package Information

SOT-23

D

B

E

A

X

H

v

M

A

E

3

Q

A

A

1

c

1

2

e

1

b

p

w

M

B

L

p

e

detail X

0

1

2 mm

scale

DIMENSIONS (mm are the original dimensions)

A

1

UNIT

b

c

D

E

e

e

H

L

Q

v

w

A

p

p

1

E

max.

1.1

0.9

0.48

0.38

0.15

0.09

3.0

2.8

1.4

1.2

2.5

2.1

0.45

0.15

0.55

0.45

mm

0.1

1.9

0.95

0.2

0.1

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