BORN-A1015
| Part # | BORN-A1015 |
Download  | BORN-A1015 |
A
1015
PNP
Plastic-Encapsulate Transistor
»
Feature
s
»
Pin Configurations
3 COLLECTOR
V
CE
=
–
5
0V
I
C
=
–
150m
A
1 BASE
=
80
MHZ
@
V
CE
=
-10
V
,
I
C
=
-1mA, f=30MHZ
f
T
2 EMITTER
»
General Description
3
Complementary to C
1815
Epitaxial planar die constructio
SOT-23
Plastic
Package
1
2
Absolute Maximum Ratings
@T
A
=25
℃
unless otherwise noted
»
Symbol
V
CBO
V
CEO
V
EBO
I
C
Parameter
Value
-50
Unit
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
-50
V
-5
V
-150
200
mA
mW
℃
/W
℃
P
C
Collector Power Dissipation
R
ΘJA
T
J
,
T
stg
Thermal Resistance From Junction
T
o
A
mbient
625
Operation Junction And Storage
T
e
mperature Range
-55
～
+150
Electrical Characteristics
@T
A
=25
℃
unless otherwise noted
»
Symbol
Parameter
Test conditions
I
C
=-100µA, I
E
=0
I
C
=-100µA, I
B
=0
I
E
=-100µA, I
C
=0
V
CB
=-50V, I
E
=0
V
CB
=-50V, I
B
=0
V
EB
=-5V, I
C
=0
Min
-50
-50
-5
Typ
Max
Unit
V
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V
V
-100
-1
nA
µA
nA
I
CEO
Collector cut-off current
I
EBO
Emitter cut-off current
-100
400
-0.3
-1.1
h
FE
DC current gain
V
CE
=-5V, I
C
=-1mA
120
80
V
CE(sat)
V
BE(sat)
f
T
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
V
V
I
C
=-100mA, I
B
=-10mA
V
CE
=-10V, I
C
=-1mA, f=30MHz
MHz
Revision 2018
1 /
4
A1015
»
Typical Performance Characteristics
（
(TJ = 25 °C, unless otherwise noted)
）
Revision 2018
2
/
4
A1015
»
Package Information
SOT-23
MILLIMETER
Typ
SYMBOL
MIN.
0.9
0
0.02
–
MAX
1.10
0.10
–
A
A1
A2
D
1.00
0.06
0.60
2.85
0.37
2.35
1.25
1.85
0.35
0
2.90
2.95
0.43
2.45
1.35
1.95
0.48
6
◦
b
0.40
E
2.40
E1
e
1.30
1.90
L
0.40
θ
–
»
H
FE
Classifications & Marking
h
FE
120
～
240
2
00
～
400
Marking
BA
»
Ordering information
Order code
Package
SO
T-23
Base qty
Deliver
y
m
ode
A733
3K
Tape and reel
Revision 2018
4
/
4
