BORN-BM2300
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BM2300
MOSFET
ROHS
N-Channel MOSFET
SOT
–
–
2
3
Features
Advanced trench process technology
High Density Cell Design For
Ultra Low On-Resistance
Maximum Ratings & Thermal Characteristics
(
Ratings at 25
ambient temperature unless otherwise specified.)
℃
Parameter
Symbol
V
DS
V
GS
I
D
Limit
20
Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
1)
V
±
12
3.6
A
I
DM
8
TA = 25
o
C
TA = 75
o
C
1.25
0.8
Maximum Power Dissipation
P
D
W
Operating Junction and Storage Temperature Range
T
J
, T
stg
R
q
JA
-55 to 150
78
o
C
o
C/W
Junction-to-Ambient Thermal Resistance (PCB mounted)
2)
Notes
1)
Pulse width limited by maximum junction temperature.
Surface Mounted on FR4 Board, t
v
5 sec.
2)
Electrical Characteristics
(
Ratings at 25
℃
ambient temperature unless otherwise specified).
Min.
Parameter
Symbol
Typ.
Miax.
Unit
Test Condition
Static
3)
Drain-Source Breakdown Voltage
Drain-Source On-State Resistance
Drain-Source On-State Resistance
Gate Threshold Voltage
Zero Gate Voltage Drain Current 0
Gate Body Leakage
BV
DSS
V
GS
= 0V, I
D
= 250uA
R
DS(on)
V
GS
= 2.5V, I
D
= 3.1A
R
DS(on)
V
GS
= 4.5V, I
D
= 3.6A
V
GS(th)
V
DS
=V
GS
, I
D
= 250uA
I
DSS
V
DS
= 20V, V
GS
= 0V
I
GSS
V
GS
=
±
12V, V
DS
= 0V
20
V
70.0
60.0
0.76
80.0
70.0
m
W
0.6
V
uA
nA
S
1
±
100
Forward Transconductance
Dynamic
4)
g
fs
V
DS
= 5V, I
D
= 4.2A
5
Total Gate Charge
Q
g
Q
gs
Q
gd
t
d(on)
t
r
5.4
0.65
1.5
12
V
DS
= 10V, I
D
= 3.6A
V
GS
= 4.5V
Gate-Source Charge
Gate-Drain Charge
nC
ns
Turn-On Delay Time
Turn-On Rise Time
V
DD
= 10V, R
G
= 6
Ω
I
D
= 1A,
V
GS
= 4.5V
RL = 5.
5
Ω
36
Turn-Off Delay Time
t
d(off)
t
f
34
Turn-Off Fall Time
10
Input Capacitance
C
iss
C
oss
C
rss
340
115
33
V
DS
= 10
V
, V
GS
= 0V
f = 1.0 MHz
pF
Output Capacitance
Reverse Transfer Capacitance
Source-Drain Diode
Max. Diode Forward Current
Diode Forward Voltage
I
S
1.6
1.0
A
V
V
SD
I
S
= 1.0A, V
GS
= 0V
Notes
3)
Short duration test pulse used to minimize self-heating effect.
4)
Pulse test pulse width
=300us,duty cycle
= 2%.
<
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Page 1 of 3
Rev 8: Nov 2014
BM2300
MOSFET
ROHS
P-Channel MOSFET
Output Characteristics
Transfer Characteristics
10
8
10
8
V
= 5 thru 2.5 V
GS
2 V
6
6
T
C
= 125
_
C
4
4
2
2
25
_
C
1.5 V
0, 0.5, 1 V
–55
_
C
0
0
0
1
V
2
3
4
5
0
0.5
V
1.0
1.5
2.0
2.5
– Drain-to-Source
Voltage (V)
– Gate-to-Source
Voltage (V)
DS
GS
On-Resistance vs. Drain Current
Capacitance
0.15
1000
800
600
400
200
0
0.12
0.09
0.06
0.03
0
V
GS
= 2.5 V
V
GS
= 4.5 V
C
iss
C
oss
C
rss
0
2
4
6
8
10
0
4
V
DS
8
12
16
20
I
D
– Drain
Current (A)
– Drain-to-Source
Voltage (V)
Gate Charge
On-Resistance vs. Junction Temperature
5
4
3
2
1
0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
V
= 10 V
= 3.6 A
V
GS
= 4.5 V
DS
I
D
I =
3.6 A
D
0
1
2
3
4
5
6
7
–50
0
50
100
150
Q
–
T
o
tal
Gate Charge (nC)
– Junction
T
e
mperature (
_
C)
T
g
J
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.20
10
0.16
0.12
0.08
0.04
0
T
J
= 150
_
C
I
= 3.6 A
D
T
J
= 25
_
C
1
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
V
SD
– Source-to-Drain
Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
–
Page 2 of 3
Rev 8: Nov 2014
BM2300
MOSFET
ROHS
P-Channel MOSFET
SO
T
–
23 PACKAGE
OUTLINE
Plastic surface mounted package
SOT-23
(UNIT)
：
mm
Page 3 of 3
Rev 8: Nov 2014
