BORN-BMDFN2301
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BMDFN2301
P
-Channel MOSFET
»
Feature
s
»
Pin Configurations
V
DS
=
–
2
0
V
I
D
=
–
0.
74
A
D
R
R
R
R
@V =
–
4.5
V,
TYP
=
230
m
Ω
GS
DS(ON)
DS(ON)
@V =
–
2.8
V,
TYP
=
320
m
Ω
GS
@V =
–
2.5
V,
TYP
=
355
m
Ω
DS(ON)
DS(ON)
GS
@V =
–
1.8
V,
TYP
=
650
m
Ω
GS
S
G
»
General Description
G
S
Advanced trench process technology
D
High Density Cell Design For Ultra Low
On-Resistance
DFN1006-3L
for Surface Mount Package
DC-DC converter circuit
Power Switch
DFN1006-3L
»
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Symbol
V
DS
10 S
Steady State
Unit
-20
V
±
10
Gate-Source Voltage
V
GS
T
A
=25°C
T
A
=70°C
T
A
=25°C
T
A
=70°C
T
A
=25°C
T
A
=70°C
T
A
=25°C
T
A
=70°C
-0.74
-0.59
0.32
0.20
-0.70
-0.56
0.28
0.18
-0.69
-0.55
0.27
0.18
-0.65
-0.52
0.25
0.16
Continuous Drain Current
a
Maximum Power Dissipation
a
Continuous Drain Current
b
Maximum Power Dissipation
b
I
D
P
D
I
D
A
W
A
P
D
W
Pulsed Drain Current
c
I
DM
T
J
-1.5
A
-55 to 150
Operating Junction
T
e
mperature
Lead
T
emperature
°C
°C
°C
260
T
L
–
55 to 150
Storage Temperature Range
T
stg
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»
Thermal resistance ratings
Parameter
Symbol
Typical
340
Maximum
395
Unit
t ≤ 10 s
Junction-to-Ambient Thermal Resistance
a
R
θJA
Steady State
t ≤ 10 s
390
455
387
441
°C/W
Junction-to-Ambient Thermal Resistance
b
Junction-to-Case Thermal Resistance
R
θJA
R
θJC
Steady State
Steady State
445
505
240
285
a
b
c
d
Surface mounted on FR4 Board using 1 square inch pad size, 1oz copper
Surface mounted on FR4 board using minimum pad size, 1oz copper
Repetitive rating, pulse width limited by junction temperature, t
p
=10µs, Duty Cycle=1%
Repetitive rating, pulse width limited by junction temperature T
J
=150°C.
Electrical Characteristics
@T
A
=25
℃
unless otherwise noted
»
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-to-source Leakage Current
ON CHARACTERISTICS
BV
DSS
I
DSS
I
GSS
V
GS
= 0
V
,
I
D
= -250uA
V
DS
=-16
V
,
V
GS
= 0V
V
DS
= 0
V
,
V
GS
= ±10V
-20
V
-1
uA
uA
±
5
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= -250uA
V
GS
= -4.5
V
,
I
D
= -1.4A
V
GS
= -2.8
V
,
I
D
= -0.8A
V
GS
= -2.5
V
,
I
D
= -0.6A
V
GS
= -1.8
V
,
I
D
= -0.5A
-0.45
-0.7
230
320
355
650
-1.0
390
480
620
790
V
Drain-to-source On-resistance
R
DS(on)
mΩ
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
C
ISS
104
25
V
GS
= 0
V
, f =
1
.0 MHz, V
DS
-15 V
=
Output Capacitance
Reverse Transfer Capacitance
T
o
tal Gate Charge
C
OSS
C
RSS
Q
G(TOT)
Q
G(TH)
Q
GS
pF
nC
19
1.1
Threshold Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Rise Time
0.25
0.38
0.47
V
GS
= -4.5
V
,
V
DS
= -10 V,
I
D
= -1A
Q
GD
td(ON)
7.2
7.5
tr
V
GS
= -4.5
V
,
V
DS
= -10 V,
ns
R
G
=6
Ω,
ID=-1A
Turn-Off Delay Time
Fall Time
td(OFF)
tf
18.5
10.7
BODY DIODE CHARACTERISTICS
Forward Voltage
V
SD
V
GS
= 0
V
,
I
S
= -0.5A
-0.5
-0.8
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»
Typical Performance Characteristics
（
(TJ = 25 °C, unless otherwise noted)
）
5
4
3
2
1
0
5
4
3
2
1
0
V
GS
=-5.0V
V
GS
=-4.5V
V
GS
=-3.0V
T=25
o
C
T=-50
o
C
V
GS
=-2.5V
T=150
o
C
V
GS
=-1.8V
2.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0.0
0.5
1.0
1.5
2.5
3.0
-V
GS
-Gate to Source Voltage(V)
-V
DS
-Drain-to-Source Voltage (V)
Output characteristics
Transfer characteristics
1.0
0.8
0.6
0.4
0.2
0.0
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
I
D
=-1.0A
V
GS
=-3.0V
V
GS
=-2.5V
V
GS
=-4.5V
0.5
1.0
1.5
2.0
2.5
3.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
-I
D
-Drain to Source Current(A)
-V
GS
-Gate to Source Voltage (V)
On-Resistance vs. Drain current
On-Resistance vs. Gate-to-Source voltage
1.6
1.4
V
GS
=-4.5V
I
D
=-1.2A
I
D
=-250uA
1.2
1.4
1.2
1.0
0.8
0.6
1.0
0.8
0.6
0.4
-50
0
50
100
150
-50
0
50
100
150
Temperature (
o
C)
Temperature (
o
C)
On-Resistance vs. Junction temperature
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160
120
80
40
0
3.0
2.5
2.0
1.5
1.0
0.5
V
GS
=0
f=1MHz
C
iss
T=150
o
C
T=25
o
C
C
oss
C
rss
T=-50
o
C
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
0
3
12
15
-V
SD
-Source to Drain Voltage (V)
-V
DS
-Drain to Source Voltage(V)
Capacitance
Body diode forward voltage
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
10
V
GS
=-4.5V
V
DS
=-10V
I
D
=-1.0A
Limit by Rdson
1
0.1
100us
1ms
10s
10ms
100ms
1s
DC
0.01
1E-3
T
A
=25
o
C
Single Pulse
0.0
0.4
0.8
1.2
1.6
0.1
1
10
Gate Charge Characteristics (nC)
-V
DS
-Drain to Source Voltage(V)
*V
GS
>minimum V
GS
at which R
DS(ON)
is specified
Gate Charge Characteristics
Safe operating power
80
T
J(MAX)
=150
o
C
T
A
=25
o
C
70
60
50
40
30
20
10
0
1E-6
1E-5
1E-4
1E-3
0.01
0.1
1
10
100
Pulse width (S)
Single pulse power
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BMDFN2301
1
0.1
D
uty cycle=0.5
0
.2
0
.1
0
.05
P
DM
0
.02
0.01
1E-3
1E-4
s
ingle pulse
t
1
t
2
1. Duty Cycle, D=t
1
/t
2
2. Per Unit Base =R
θJA
= 390°C/W
3. T
JM
-T
A
= P
DM
R
θJA
4. Surface Mounted
1E
-6
1E-5
1E-4
1E-3
0.01
0.1
1
10
100
1000
S
quare Wave Pulse Duration (sec)
Transient thermal response (Junction-to-Ambient)
Revision 2018
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»
Package Information
DFN1006-3L
D
DIMENSIO
N
S
MILLIMETERS
NOM
E
SYM
MIN
0.4
5
0.
00
0.4
5
0.
10
0.1
2
0.9
5
MAX
0
.55
0.05
0.55
0.20
0.18
1.05
A
A1
b
0.50
L1
b1
0.02
e
0.50
b1
C
0.15
0.1
5
b
E1
D
1.00
0.65 BSC
0.60
e
E
0.5
5
0.
15
0.2
0
0.65
0.25
0.30
L1
L
E1
L
0.2
0
0.
2
5
L1
0
0
.
05
REF
A
A1
C
Suggested Land Pattern
：
DIMENSIONS
MILLIMETERS
Y1
Y2
SYM
INCHES
0.010
0.024
0.020
0.020
0.010
0.008
C
X
0.25
0.65
0.50
0.50
0.25
0.20
Z
Y3
X
Y1
Y2
Y3
Z
C
»
Ordering information
Order code
Package
DFN1006-3L
Base qty
Deliverymode
Marking
BM
DFN
230
1
M
2301
10K
Tape an
d
reel
Revision 2018
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