BORN-BMDFN2302
| Part # | BORN-BMDFN2302 |
Download  | BORN-BMDFN2302 |
BMDFN230
2
N
-Channel MOSFET
»
Feature
s
»
Pin Configurations
V
DS
=
2
0
V
I
D
=
0.
7
1
A
D
R
R
R
@V =
4.5
V,
TYP
=
2
2
0
m
Ω
GS
DS(ON)
DS(ON)
@V =
2.
5
V,
TYP
=
26
0
m
Ω
GS
@V =
1.8
V,
TYP
=
315
m
Ω
DS(ON)
GS
G
S
»
General Description
Trench Technology
G
S
Supper high density cell design
Excellent ON resistance for higher DC current
Extremely Low Threshold Voltage
Small package DFN1006-3L
Small Signal Switching
D
DFN1006-3L
Small Moto Driver
»
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Symbol
V
DS
10 S
Steady State
20
Unit
V
Gate-Source Voltage
±5
V
GS
T
A
=25°C
T
A
=70°C
T
A
=25°C
T
A
=70°C
T
A
=25°C
T
A
=70°C
T
A
=25°C
T
A
=70°C
0.71
0.57
0.32
0.20
0.67
0.54
0.28
0.18
0.66
0.52
0.27
0.17
0.62
0.50
0.24
0.15
1.4
Continuous Drain Current
a d
Maximum Power Dissipation
a d
Continuous Drain Current
b d
Maximum Power Dissipation
b d
I
D
P
D
I
D
A
W
A
P
D
W
Pulsed Drain Current
c
A
I
DM
T
J
Operating Junction Temperature
Lead Temperature
150
°C
°C
°C
T
L
260
Storage Temperature Range
-55 to 150
T
stg
Revision 2018
1 /
6
BMDFN230
2
»
Thermal resistance ratings
Parameter
Symbol
Typical
350
Maximum
390
Unit
t ≤ 10 s
Junction-to-Ambient Thermal Resistance
a
R
θJA
395
455
Steady State
t ≤ 10 s
397
435
°C/W
Junction-to-Ambient Thermal Resistance
b
Junction-to-Case Thermal Resistance
R
θJA
R
θJC
445
505
Steady State
Steady State
240
280
a
b
Surface mounted on FR4 Board using 1 square inch pad size, 1o
z
c
opper
Surface mounted on FR4 board using minimum pad size, 1o
z
c
opper
c
Pulse width<380μs, Single pulse
d
Maximum junction temperature T
J
=150
°
C.
e
Pulse test: Pulse width <380 us duty cycle <2%.
Electrical Characteristics
@T
A
=25
℃
unless otherwise noted
»
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-to-source Leakage Current
ON CHARACTERISTICS
20
V
BV
DSS
I
DSS
I
GSS
V
GS
= 0 V,
I
D
= 250uA
V
DS
=16 V, V
GS
= 0V
V
DS
= 0 V, V
GS
=±5V
1
uA
uA
±5
Gate Threshold Voltage
0.45
0.58
220
260
315
2.0
0.85
420
500
600
V
mΩ
S
V
GS(TH)
R
DS(on)
g
FS
V
GS
= V
DS
, I
D
= 250uA
V
GS
= 4.5V, I
D
= 0.55A
V
GS
= 2.5V, I
D
= 0.45A
V
GS
= 1.8V, I
D
= 0.35A
V
DS
= 5 V, I
D
= 0.55A
Drain-to-source On-resistance
e
Forwar
d
T
ransconductance
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
50.6
13.2
8.3
C
ISS
V
GS
= 0 V, f = 1 MHz,
V
DS
10 V
=
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
pF
nC
C
OSS
C
RSS
Q
G(TOT)
Q
G(TH)
Q
GS
0.87
0.06
0.15
0.27
Threshold Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Rise Time
V
GS
= 4.5 V, V
DS
= 10
V,
I
D
= 0.55A
Q
GD
td(ON)
16
tr
11.6
36
V
GS
= 4.5 V, V
DS
= 10V,
I
D
=0.55A, R
G
=6 Ω
ns
Turn-Off Delay Time
Fall Time
td(OFF)
tf
11
BODY DIODE CHARACTERISTICS
Forward Voltage
0.5
0.7
V
SD
V
GS
= 0 V,
I
S
= 0.35A
Revision 2018
2
/
6
BMDFN230
2
»
Typical Performance Characteristics
（
(TJ = 25 °C, unless otherwise noted)
）
2.0
1.6
1.2
0.8
0.4
0.0
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
V
GS
=4V
GS
=3V
V
DS
=0.5V
V
GS
=1.8V
V
V
GS
=2.5V
T=-55
°
C
T=125
°
C
T=25
°
C
V
GS
=1.5V
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0.0
0.5
V
1.0
1.5
2.0
2.5
3.0
V
–
D
rai
n
toSourceVoltage(V)
– Gate to Source Voltage (V)
GS
DS
Output characteristics
Transfer characteristics
0.50
0.45
0.40
1.0
0.8
0.6
I =0.55A
D
V
=1.8V
GS
0.35
0.30
0.25
0.20
0.15
0.10
V
=2.5V
GS
0.4
0.2
0.0
V
G
S
=4.5V
0.0
0.5
1.0
1.5
2.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
I
DS
– Drain to Source
Current(A)
V
GS
– Gate to Source Voltage(V)
On-Resistance vs. Drain current
On-Resistance vs. Gate-to-Sourc
e
v
oltage
1.2
V
GS
=4.5V
I
D
=0.55A
1.4
1.1
1.0
0.9
0.8
0.7
0.6
0.5
I
D
=250uA
1.2
1.0
0.8
0.6
-50 -25
0
25
50
75 100
125 150
-50 -25
0
25
50
75 100 125
150
Temperature(
o
C)
Temperature(
o
C)
On-Resistance vs. Junctio
n
t
emperature
Revision 2018
3
/
6
BMDFN230
2
1.0
0.8
60
V
G
S
=0V
F=1 Hz
M
50
40
150
o
C
0.6
0.4
0.2
0.0
Ciss
Coss
Crss
30
20
10
0
25
o
C
0
2
4
6
8
10
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
V
Drain-to-Source Voltage (V)
V –
Source to Drai
n
Voltage(V)
DS
SD
Capacitance
Body diode forward voltage
30
25
20
15
10
5
10
T
=150
°
C
J(Max)
T =25
°
C
A
I
L
i
mit
M
D
L
i
mit by Rdson
1
1ms
10ms
DC
0.1
10S
100ms
1S
T =25
°
C
A
Single pulse
BVdss Limit
10
0.01
0.1
0
1E-3
1
100
0.01
0.1
1
10
100
1000
V
– Drain to Source Voltage (V)
Pulse width (S)
DS
*V >minimum
V at
which R
is specified
DS(on)
GS
GS
Single pulse power
Safe operating power
5
V =10V
I
D
=
S
0.55A
4
3
D
2
1
0
0
150 300 450 600
Qg(pC)
750 900
Revision 2018
4
/
6
BMDFN230
2
1
0.1
Duty cycle=0.5
0.2
0.1
0.05
P
DM
0.02
0.01
1E-3
1E-4
single pulse
t
1
t
2
1. Duty Cycle, D=t
1
/t
2
2. Per Unit Base =R
θJ
A
= 395°C/W
3. T
JM
-T
A
= P
DM
R
θJA
4.
Surface Mounted
1E-6
1E-5
1E-4
1E-3
0.01
0.1
1
10
100
1000
Square Wave Pulse Duration (sec)
Transient thermal response(Junction-to-Ambient)
Revision 2018
5
/
6
BMDFN230
2
»
Package Information
DFN1006-3L
D
DIMENSIO
N
S
MILLIMETERS
NOM
E
SYM
MIN
0.4
5
0.
00
0.4
5
0.
10
0.1
2
0.9
5
MAX
0
.55
0.05
0.55
0.20
0.18
1.05
A
A1
b
0.50
L1
b1
0.02
e
0.50
b1
C
0.15
0.1
5
b
E1
D
1.00
0.65 BSC
0.60
e
E
0.5
5
0.
15
0.2
0
0.65
0.25
0.30
L1
L
E1
L
0.2
0
0.
2
5
L1
0
0
.
05
REF
A
A1
C
Suggested Land Pattern
：
DIMENSIONS
MILLIMETERS
Y1
Y2
SYM
INCHES
0.010
0.024
0.020
0.020
0.010
0.008
C
X
0.25
0.65
0.50
0.50
0.25
0.20
Z
Y3
X
Y1
Y2
Y3
Z
C
»
Ordering information
Order code
Package
DFN1006-3L
Base qty
Deliverymode
Marking
BM
DFN
230
2
M
2
0
10K
Tape an
d
reel
Revision 2018
6
/
6
