BORN-BML6401

BML6401  

ROHS  

MOSFET  

P-Channel MOSFET  

SOT

–

–

2

3  

Features  

Ultra low on-resistance.  

Fast switching.  





Marking:  

6401  

Maximum Ratings & Thermal Characteristics  

(

Ratings at 25

℃

ambient temperature unless otherwise specified.)  

Parameter  

Symbol  

Rating  

-12  

Unit  

V

Drain-Source Voltage  

Gate-Source Voltage  

V

DS  

GS  

V

±8  

I

D  

-4.3  

Continuous Drain Current

 

V

GS

=4.5V @

 

T

A

=25

℃

 

A

Pulsed Drain Current  

Power Dissipation  

a

I

DM  

-13  

@ TA=25

℃  

1.3  

100  

0.01  

150  

W

P

D

Thermal Resistance.Junction- to-Ambient  

Linera Derating Factor  

R

thJA  

℃

/W  

W/

℃  

Junction Temperature  

T

J

℃

Junction and Storage Temperature Range  

Notes:  

T

stg  

-55 to 150  

a.Repetitive Rating :Pulse width limited by maximum junction temperature  

b.Starting T =25

℃

, L=3.5mH,

 

R =25

Ω

, I

AS

=-4.3A  

J

G

Electrical Characteristics  

(

Ratings at 25

℃

ambient temperature unless otherwise specified).  

Parameter  

Symbol  

Test Conditions  

Min  

-12  

Typ  

Max  

Unit  

Drain-Source Breakdown Voltage  

V

DSS  

V

I

D

=-250

μ

A, V

GS

=0V  

V

V

V

V

V

V

V

V

-1  

-25  

Zero Gate Voltage Drain Current  

I

DSS  

GSS  

μ

A  

J

= 55

℃  

Gate-Body leakage current  

Gate Threshold Voltage  

I

nA  

V

±

100  

-0.95  

50  

V

GS(th)  

-0.4  

8.6  

GS

=-1.8V, I  

D

=-4.3A  

D

=-2.5A  

D

=-2A  

Static Drain-Source On-Resistance  

R

DS(O

n

)  

85  

m

Ω  

S

125  

Forward Transconductance  

Input Capacitance  

g

FS  

iss  

oss  

rss  

C

830  

180  

125  

11  

V

pF  

Output Capacitance  

C

Reverse Transfer Capacitance  

Turn-On DelayTime  

C

t

d(on)  

d(off)  

ns  

I

D

=-1.0A, V

DS

=-6.0V, R

GEN

=6

Ω  

Turn-Off DelayTime  

t

250  

22  

Body Diode Reverse Recovery Time  

Maximum Body-Diode Continuous Current  

Diode Forward Voltage  

t

rr  

S

33  

1.3  

-1.2  

I

F

=-1.3A, d

I

/d

t

=-100A/

μ

s  

I

A

V

V

SD  

I

S

=-1.3A,V

GS

=0V  

Page 1 of 3  

Rev 8: Nov 2014  

BML6401  

ROHS  

MOSFET  

P-Channel MOSFET  

100  

10  

100.0  

VGS  

TOP  

-7.0V  

-5.0V  

-4.5V  

-3.0V  

-2.5V  

– 1.8V  

-1.5V  

T

= 25°C  

J

T

= 150°C  

J

10.0  

1.0  

BOTTOM -1.0V  

1

-1.0V  

0.1  

0.01  

20µs PULSE WIDTH  

Tj = 25°C  

V

= -12V  

DS  

20µs PULSE WIDTH  

0.1  

0.1  

1

10  

100  

1.0  

1.5  

2.0  

2.5  

3.0  

3.5  

4.0  

-V ,

 

Drain-to-Source Voltage (V)  

DS  

-V ,

 

Gate-to-Source Voltage (V)  

GS  

Fig 2.

 

Typical Transfer Characteristics  

Fig 1.

 

Typical Output Characteristics  

2.0  

100  

-4.3A  

=

I

D

1.5  

1.0  

0.5  

0.0  

.

10  

°

T =

 

150 C  

J

°

T =

 

25 C  

J

1

V

= 0 V  

V

=

–

4.5V  

GS  

GS  

0.1  

0.2  

0.6  

1.0  

1.4  

1.8  

-60 -40 -20  

0

20 40 60 80

 

100 120 140 160  

°

-V ,Source-to-Drain

 

Voltage (V)  

SD  

T ,

 

Junction Temperature (

 

C)  

J

Fig 4.

 

Typical Source-Drain Diode  

Fig 3.

 

Normalized On-Resistance  

Forward Voltage  

Vs. Temperature  

5.0  

4.0  

3.0  

2.0  

1.0  

0.0  

1000  

OPERATION IN THIS AREA LIMITED  

BY R  

DS(on)  

100  

10  

1

10us  

100us  

1ms  

10ms  

°

T =

 

25 C  

C

J

°

T =

 

150 C  

Single Pulse  

0.1  

0.1  

1

10  

100  

25  

50  

75  

100  

125  

150  

-V ,

 

Drain-to-Source Voltage (V)  

DS  

°

T ,

 

Case Temperature

 

( C)  

C

Fig

5

.

 

Maximum Drain Current Vs.  

Fig 6.

 

Maximum Safe Operating Area  

Case Temperature  

Page 2 of 3  

Rev 8: Nov 2014  

BML6401  

ROHS  

MOSFET  

P-Channel MOSFET  

SO

T

–

23 PACKAGE

 

OUTLINE

Plastic surface mounted package  

SOT-23  

(UNIT)

：

mm  

Page 3 of 3  

Rev 8: Nov 2014