BORN-BSS138
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BSS138
MOSFET
ROHS
N-Channel Enhancement-Mode
MOSFET
SOT
–
–
2
3
Features
•
Low R
DS(on)
@V
GS
=10V
•
3.3V Logic Level Control
•
N Channel SOT23 Package
• Pb−Free, RoHS Compliant
V
(BR)DSS
R
DS(ON)
Typ
1
Ω
@ 10V
I
D
Max
0.5A
Applications
•
LED Lighting Application,
•
ON/OFF switch
•
Networking
50V
1.2
Ω
@ 4.5V
Order Information
Marking
Product
Package
Packing
Min Unit Quantity
3000PCS
KN
BSS138
SOT23
3000PCS/Reel
Absolute Maximum Ratings
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above
the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions
may affect device reliability.
Symbol
Parameter
Rating
Unit
Common Ratings (T
A
=25°C Unless Otherwise Noted)
V
GS
Gate-Source Voltage
±12
50
V
V
Drain-Source Breakdown Voltage
Maximum Junction
T
e
mperature
Storage
T
e
mperature Range
V
(BR)DSS
T
J
150
°C
°C
T
STG
-50 to 150
Mounted on Large Heat Sink
=25°C
=25°C
=70°C
=25°C
=70°C
I
DM
T
A
T
A
T
A
T
A
T
A
Pulse Drain Current
T
e
sted
①
1.8
0.5
0.4
0.3
0.2
400
A
A
I
D
Continuous Drain Current
P
Maximum Power Dissipation
W
D
R
JA
Thermal Resistance Junction-Ambient
°C/W
Page 1 of 4
Rev 8: Nov 2018
BSS138
MOSFET
ROHS
N-Channel Enhancement-Mode
MOSFET
Symbol
Parameter
Condition
Min
Typ
Max Unit
Static Electrical Characteristics @ T
J
= 25°C (unless otherwise stated)
Drain-Source Breakdown Voltage
V
GS
=0V I
D
=250μA
50
—
—
—
—
1
V
V
(BR)DSS
Zero Gate Voltage Drain Current(T
A
=25
℃
)
V
DS
=50
V
,
V
GS
=0V
μA
I
DSS
Zero Gate Voltage Drain Current(T
A
=125
℃
) V
DS
=40
V
,
V
GS
=0V
—
—
—
—
100
±100
1.5
2
uA
nA
V
Gate-Body Leakage Current
Gate Threshold Voltage
V
GS
=±12
V
,
V
DS
=0V
V
DS
=V
GS
, I
D
=250μA
V
GS
=10
V
,
I
D
=0.5A
I
GSS
0.6
—
1.0
1.0
V
GS(TH)
R
DS(ON)
R
DS(ON)
Drain-Source On-State Resistance
②
Ω
Drain-Source On-State Resistance
②
Drain-Source On-State Resistance
②
V
GS
=4.5
V
,
I
D
=0.3A
V
GS
=3.3
V
,
I
D
=0.2A
—
—
1.2
1.6
2.5
4
Ω
Ω
R
DS(ON)
Dynamic Electrical Characteristics @ T
J
= 25°C (unless otherwise stated)
Input Capacitance
—
—
—
—
—
—
23
3.8
—
—
—
—
—
—
pF
pF
pF
nC
nC
nC
C
iss
V
DS
=30
V
,
V
GS
=0
V
,
Output Capacitance
C
oss
f=1MHz
Reverse Transfer Capacitance
1.5
C
rss
T
o
tal Gate Charge
0.91
0.18
0.3
Q
g
V
DS
=30V
Gate Source Charge
Gate Drain Charge
I
D
=0.5A,
V
GS
=10V
Q
gs
Q
gd
Switching Characteristics
6
Turn on Delay Time
—
—
–
—
—
—
—
ns
ns
ns
ns
t
d(on)
V
DD
=30
V
,
I
D
=0.3A,
R
G
=3.3
Ω,
V
GS
=10V
3.5
20
5.9
Turn on Rise Time
t
r
Turn Off Delay Time
t
d(off)
Turn Off Fall Time
—
t
f
Source Drain Diode Characteristics
Source drain current(Body Diode)
T
A
=25
℃
—
—
—
0.2
1.2
A
V
I
SD
T
j
=25
℃
, I
SD
=0.5A,
Forward on voltage
②
0.78
V
SD
V
GS
=0V
Notes:
①
Pulse width limited by maximum allowable junction temperature
②
Pulse test ; Pulse width
300
s, duty cycle
2%.
Page 2 of 4
Rev 8: Nov 2018
BSS138
MOSFET
Typical Characteristics
ROHS
N-Channel Enhancement-Mode
MOSFET
V
DS
, Drain -Source Voltage (V)
Tj – Junction
T
emperature (°C)
Fig1.
Typical Output Characteristics
Fig2.
Normalized Threshold Voltage Vs.
T
emperature
V
GS
, Gate -Source Voltage (V)
V
GS
, Gate -Source Voltage (V)
Fig3.
Typical Transfer Characteristics
Fig4.
Drain -Source Voltage vs Gate -Source Voltage
V
SD
, Source-Drain Voltage (V)
V
DS
, Drain -Source Voltage (V)
Fig5.
Typical Source-Drain Diode Forward Voltage
Fig6.
Maximum Safe Operating Area
Page 3 of 4
Rev 8: Nov 2018
BSS138
MOSFET
Typical Characteristics
ROHS
N-Channel Enhancement-Mode
MOSFET
V
DS
, Drain-Source Voltage (V)
Fig7.
Typical Capacitance Vs. Drain-Source Voltage
Qg,
T
o
tal Gate Charge (nC)
Fig8.
Typical Gate Charge Vs. Gate-Source Voltage
Pulse Width (s)
Fig9.
Normalized Maximum Transient Thermal Impedance
SO
T
–
23 PACKAGE
OUTLINE
Plastic surface mounted package
SOT-23
(UNIT)
：
mm
Page 4 of 4
Rev 8: Nov 2018
