BORN-BSS84

B

SS84  

P

-Channel MOSFET  

»

Feature

s

 

»

Pin Configurations  

V

DS

=

–

5

0

V  

I

D

=

–

0.1

3

A  

R

R

@V =

 

–

10

V,

TYP

=

2

Ω  

GS  

DS(ON)  

DS(ON)  

@V =

 

–

4

.5

V,

TYP

=

2.5

Ω  

GS  

»

General Description  





Advanced trench process technology  

High Density Cell Design For Ultra Low  

On-Resistance  



SOT-23 for Surface Mount Package.  

Absolute Maximum Ratings

@T

A

=25

℃

unless otherwise noted  

»

Symbol  

V

DS  

V

GS  

I

D  

Parameter  

Value  

Unit  

V

Drain-Source Voltage  

Gate-Source Voltage  

-50  

±20  

V

Continuous Drain Current  

Pulsed Drain Current

(tp=10s)  

Power Dissipation  

-0.13  

-0.5  

A

I

DM  

A

P

D  

350  

mW  

R

ΘJA  

Thermal Resistance From Junction

T

o

A

mbient (t

≤

5s)  

350  

℃

/W  

Operation Junction And Storage

T

e

mperature Range  

-55

～

+150  

℃

T

J

,

T

stg  

Revision 2018  

1 /

4

 

B

SS84  

Electrical Characteristics

@T

A

=25

℃

unless otherwise noted  

»

Symbol  

Parameter  

Test conditions  

Min  

Typ  

Max  

Unit  

Static  

V

(BR)DSS  

V

GS(th)  

I

GSS  

Drain-source breakdown voltage  

Gate threshold voltage  

V

=0, I

 

=250µA  

-50  

V

V

GS  

D

V

=V ,

 

I =-250µA  

-0.8  

-2.0  

±10  

-10  

-100  

5

DS GS  

D

V

=0, V

 

=±10V  

µA  

µA  

nA  

Ω

Gate-body leakage current  

DS  

GS  

V

=-50V, V

 

=0V  

DS  

DS  

GS  

=-40V, V

 

=0V  

I

DSS  

Zero gate voltage drain current  

V

GS  

V

=-10V, I

 

=-0.13A  

2

GS  

D

R

DS(on)  

a

Drain-source on-resistance  

V

=-4.5V, I

 

=-0.13A  

2.5  

6

Ω

GS  

D

a

g

FS  

V

SD  

Forward transconductance  

V

=-25

V

, I

 

=

-0.13A  

50  

mS  

V

DS  

D

Diode forward voltage  

I =-0.13A,V

 

=0V  

-1.0  

S

GS  

Dynamic  

C

iss  

Input capacitance  

Output capacitance  

25  

15  

V

=-25V, V

 

=0V, f=1MHz  

GS  

pF  

nS  

DS  

C

oss  

C

rss  

b

3.5  

Reverse transfer capacitance  

b

Switching  

t

d(on)  

Turn-on delay time  

Rise time  

16.7  

8.6  

V

=-10

V

,

V =-15V  

DS  

GS  

t

r  

t

d(off)  

t

f  

I =-200mA,

 

R  

D GEN  

=25Ω  

Turn-off delay time  

Fall time  

17.9  

5.3  

Notes :  

a. Pulse

T

est : Pulse width≤300µs, duty cycle ≤2%.  

b.

Guaranteed by design, not subject to producting

.  

Revision 2018  

2

/

4

 

B

SS84  

»

Typical Performance Characteristics

（

(TJ = 25 °C, unless otherwise noted)

）  

Revision 2018  

3

/

4

 

B

SS84  

»

Package Information

-SOT23  

MILLIMETER  

SYMBOL  

MIN.  

0.9

0

 

0.02  

–

Typ.  

1.00  

0.06  

0.60  

2.90  

0.40  

2.40  

1.30  

1.90  

0.40  

–

MAX.  

1.10  

0.10  

–

A

A1  

A2  

D

2.85  

0.37  

2.35  

1.25  

1.85  

0.35  

0

2.95  

0.43  

2.45  

1.35  

1.95  

0.48  

6

◦  

b

E

E1  

e

L

θ

»

Marking  

PD  

»

Ordering information  

Order code  

Package  

SO

T-23  

Base qty  

3K  

Deliver

y

m

ode  

B

SS84  

Tape and reel  

Revision 2018  

4

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4