BORN-M8550

M8550  

RHOS  

Transistors  

SOT-23 Plastic-Encapsulate Transistors(PNP)  

Features  

SOT-23  

Complimentary to M8050  

Collector Current: I

 

=0.8A  





Maximum Ratings  

(

Ratings at 25

℃

ambient temperature unless otherwise specified.)  

Units  

V

Symbol  

V

CBO  

V

CEO  

V

EBO  

I

C  

Value  

-40  

Parameter  

1. BASE  

Collector-Base Voltage  

Collector-Emitter Voltage  

Emitter-Base Voltage  

Collector Current -Continuous  

Collector Power Dissipation  

Junction

T

e

mperature  

Storage

T

e

mperature  

V

2. EMITTER  

3. COLLECTOR  

-25  

V

-6  

8

-0.  

A

MARKING :

 

2TY  

W

℃

℃

P

C  

0.2  

150  

T

j  

T

stg  

-55-150  

Electrical Characteristics  

(

Ratings at 25

℃

ambient temperature unless otherwise specified).  

Limits  

Max  

Unit  

Parameter  

Symbols  

Test Condition  

I

C

=-100uA, I

E

=0  

Min  

-40  

-25  

-6  

V

(BR)CBO  

V

(BR)CEO  

V

(BR)EBO  

I

CBO  

V

V

Collector-base breakdown voltage  

Collector-emitter breakdown voltage  

Emitter-base breakdown voltage  

Collector cut-off current  

I

C

=-1mA, I

B

=0  

I

E

=-100uA, I

C

=0  

V

CB

=-35V, I

E

=0  

V

-100  

-100  

nA  

nA  

I

CEO  

h

FE(1)  

h

FE(2)  

h

FE(3)  

V

CE(sat)  

V

CE

=-20V, I

B

=0  

Collector cut-off current  

V

CE

=-1V, I

C

=-5mA  

V

CE

=-1V, I

C

=-100mA  

V

CE

=-1V, I

C

=-800mA  

I

C

=-800mA, I

B

=-80mA  

45  

85  

40  

DC current gain  

400  

-0.50  

-1.20  

V

V

Collector-emitter saturation voltage  

Base -emitter saturation voltage  

Transition frequency  

V

BE(sat)  

f

T  

I

C

=-800mA, I

B

=-80mA  

V

CE

=-6V, I

C

=-20mA,f=30MHz  

150  

MHz  

CLASSIFICATION OF h

FE(2)  

RANK  

L

H

RANGE  

85-300  

300-400  

Page 1 of 2  

Rev 8: Nov 2014  

M8550  

RHOS  

Transistors  

SOT-23 Plastic-Encapsulate Transistors(PNP)  

Page 2 of 2  

Rev 8: Nov 2014