BORN-MMBT4401
| Part # | BORN-MMBT4401 |
Download  | BORN-MMBT4401 |
MMBT4401
RHOS
Transistors
SOT-23 Plastic-Encapsulate Transistors(NPN)
SOT-23
Features
Power Dissipation of 300mW
High Stability and High Reliability
1. BASE
2. EMITTER
3. COLLECTOR
Marking: 2X
Maximum Ratings
(
Ratings at 25
℃
ambient temperature unless otherwise specified.)
Parameters
Collector-Base Voltage
Symbol
V
CBO
V
CEO
V
EBO
I
C
Value
60
Unit
V
Collector-Emitter Voltage
40
V
Emitter -Base Voltage
6
V
Collector Current-Continuous
Collector Power Dissipation
Junction
T
e
mperature
600
300
150
-55-+150
417
mA
mW
℃
P
C
T
j
Storage
T
e
mperature
T
s
tg
R
θJA
℃
Thermal resistance From junction to ambient
℃
/W
Electrical Characteristics
(
Ratings at 25
℃
ambient temperature unless otherwise specified).
Limits
Max
Symbols
Test Condition
I
C
=100uA, I
E
=0
I
C
=1mA, I
B
=0
I
E
=100uA, I
C
=0
V
CB
=50V, I
E
=0
V
CE
=35V, V
EB(off)
=0.4V
V
EB
=5V, I
C
=0
Unit
Parameter
Min
60
40
6
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CEX
I
EBO
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
V
V
V
nA
nA
nA
100
100
100
h
FE(1)
h
FE(2)
h
FE(3)
h
FE(4)
V
CE
=1V, I
C
=0.1mA
V
CE
=1V, I
C
=1mA
V
CE
=1V, I
C
=10mA
V
CE
=1V, I
C
=150mA
V
CE
=1V, I
C
=500mA
I
C
=150mA, I
B
=15mA
I
C
=500mA, I
B
=50mA
I
C
=150mA, I
B
=15mA
I
C
=500mA, I
B
=50mA
20
40
80
100
40
DC current gain
300
h
FE(5)
0.40
0.75
0.95
1.20
V
V
V
V
CE(sat)
Collector-emitter saturation voltage
Base -emitter saturation voltage
V
BE(sat)
V
f
T
t
d
Transition frequency
Delay time
V
CE
=10V, I
C
=20mA,f=100MHz
250
MHz
nS
15
20
V
CC
=30V, V
BE(off)
=-2V,
I
C
=150mA, I
B1
=15mA
Rise time
t
r
nS
Storage time
Fall time
ts
tf
225
60
nS
nS
V
CC
=30V, I
C
=150mA, I
B1=
I
B2
=15mA
Page 1 of 2
Rev 8: Nov 2014
MMBT4401
RHOS
Transistors
SOT-23 Plastic-Encapsulate Transistors(NPN)
–
Page 2 of 2
Rev 8: Nov 2014
