BORN-MMBTA44

MMBT

A44  

N

PN Plastic-Encapsulate Transistor  

»

Pin Configurations  

»

Feature

s

 

V

3 COLLECTOR  

1 BASE  

I

C

=

0.2

A  

f

T

=

50

MHZ

@

V

CE

=

2

0

V

,

I

C

=

10

mA,

f=

3

0MHz  

2 EMITTER  

»

General Description  

3





Epitaxial planar die construction  

1

SOT-23

Plastic

Package.  

2

Absolute Maximum Ratings

@T

A

=25

℃

unless otherwise noted  

»

Symbol  

V

CBO  

V

CEO  

V

EBO  

I

C  

Parameter  

Value  

400  

Unit  

V

Collector-Base Voltage  

Collector-Emitter Voltage  

Emitter-Base Voltage  

Collector Current  

400  

V

6

V

200  

mA  

mA  

mW  

I

CM  

Collector Current -Pulsed  

Collector Power Dissipation  

300  

P

C  

350  

R

ΘJA  

T

J

,

T

stg  

Thermal Resistance From Junction

T

o

A

mbient  

350  

℃

/W  

Operation Junction And Storage

T

e

mperature Range  

-55

～

+150  

℃

Revision 2018  

1 /

4  

MMBT

A44  

Electrical Characteristics

@T

A

=25

℃

unless otherwise noted  

»

Symbol  

V

(BR)CBO  

V

(BR)CEO  

V

(BR)EBO  

I

CBO  

Parameter  

Test conditions  

I =100µA,

 

I =0  

Min  

400  

400  

6

Typ  

Max  

Unit  

V

Collector-base breakdown voltage  

Collector-emitter breakdown voltage  

Emitter-base breakdown voltage  

Collector cut-off current  

C

E

I =1mA,

 

I =0  

V

C

B

I =10µA,

 

I =0  

V

E

C

V

=400V, I

 

=0  

100  

100  

nA  

nA  

CB  

E

I

EBO  

Emitter cut-off current  

V

=4V, I

 

=0  

EB C  

h

FE

(1)  

h

FE

(2)  

h

h

*

V

=10V, I

 

=1mA  

40  

50  

45  

40  

CE  

C

DC current gain(1)  

*

V

=10V, I

 

=10mA  

200  

CE  

CE  

C

DC current gain(2)  

*

V

=10V, I

 

=50mA  

C

DC current gain(3)  

*

V

=10V, I

 

=100mA  

C

CE  

DC current gain4)  

V

CE(sat)  

1

1

2

2

3

3

*

0.4  

0.7  

V

V

Collector-emitter saturation voltage  

I =1mA,

 

I =0.1mA  

C

B

V

BE(sat)  

V

CE(sat)  

V

BE(sat)  

V

CE(sat)  

V

BE(sat)  

f

T  

*

Base-emitter saturation voltage  

*

0.5  

V

Collector-emitter saturation voltage  

I =10mA,

 

I =1mA  

C

B

*

0.75  

0.75  

1.0  

V

Base-emitter saturation voltage  

*

V

Collector-emitter saturation voltage  

I =50mA,

 

I =5mA  

C

B

*

V

Base-emitter saturation voltage  

Transition frequency  

V

=20V, I

 

=10mA, f=30MHz  

50  

MHz  

pF  

pF  

CE  

V

C

C

ob  

Collector output capacitance  

Collector output capacitance  

=20V, I

 

=0, f=1MHz  

7

CB  

E

C

ib  

V

=0.5V, I

 

=0, f=1MHz  

130  

EB  

E

*Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%.  

Revision 2018  

2

/

4

 

MMBT

A44  

»

Typical Performance Characteristics

（

(TJ = 25 °C, unless otherwise noted)

）  

Revision 2018  

3

/

4  

MMBT

A44  

»

Package Information

-SOT23  

MILLIMETER  

Typ  

SYMBOL  

MIN.  

0.9

0

 

0.02  

–

MAX  

1.10  

0.10  

–

A

A1  

A2  

D

1.00  

0.06  

0.60  

2.90  

0.40  

2.40  

1.30  

1.90  

0.40  

–

2.85  

0.37  

2.35  

1.25  

1.85  

0.35  

0

2.95  

0.43  

2.45  

1.35  

1.95  

0.48  

6

◦  

b

E

E1  

e

L

θ

»

Marking  

3

D

 

»

Ordering information  

Order code  

Package  

SOT-23  

Base qty  

3

K

 

Deliverymode  

MMBT

A44  

Tape an

d

reel  

Revision 2018  

4

/

4