BORN-MMBTH10
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MMBT
H10
N
PN Plastic-Encapsulate Transistor
»
Feature
s
»
Pin Configurations
3 COLLECTOR
V
CE
=
25
V
I
C
=
50m
A
1 BASE
f
T
=
650
MHZ
@
V
CE
=
1
0
V
,
I
C
=
4
mA,
f=
100MHz
2 EMITTER
»
General Description
3
Epitaxial planar die construction
SOT-23
Plastic
Package.
1
2
Absolute Maximum Ratings
@T
A
=25
℃
unless otherwise noted
»
Symbol
V
CBO
V
CEO
V
EBO
I
C
Parameter
Value
Unit
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
30
25
V
3
50
V
mA
mW
P
C
Collector Power Dissipation
200
R
ΘJA
T
J
,
T
stg
Thermal Resistance From Junction
T
o
A
mbient
625
℃
/W
Operation Junction And Storage
T
e
mperature Range
-55
~
+150
℃
Electrical Characteristics
@T
A
=25
℃
unless otherwise noted
»
Symbol
Parameter
Test conditions
I =100µA,
I =0
Min
30
25
3
Typ
Max
Unit
V
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
C
E
I =1mA,
I =0
V
C
B
I =10µA,
I =0
V
E
C
V
=25V, I
=0
100
100
200
0.5
nA
nA
CB
E
I
EBO
Emitter cut-off current
V
=2V, I
=0
EB C
h
FE
DC current gain
V
=10V, I
=4mA
100
650
CE
C
V
CE(sat)
V
BE(sat)
V
BE
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter voltage
V
V
I =4mA,
I =0.4mA
C
B
1.0
VCE=10
V
,
I
C=4mA
=10V, I
=4mA, f=100MHz
0.95
V
f
T
Transition frequency
V
MHz
CE
C
Collector output capacitance
C
ob
VCB=10
V
,
I
E=0, f=1MHz
Revision 2018
1 /
4
MMBT
H10
»
Typical Performance Characteristics
(
(TJ = 25 °C, unless otherwise noted)
)
Revision 2018
2
/
4
MMBT
H10
»
Package Information
-SOT23
MILLIMETER
Typ
SYMBOL
MIN.
0.9
0
0.02
–
MAX
1.10
0.10
–
A
A1
A2
D
1.00
0.06
0.60
2.90
0.40
2.40
1.30
1.90
0.40
–
2.85
0.37
2.35
1.25
1.85
0.35
0
2.95
0.43
2.45
1.35
1.95
0.48
6
◦
b
E
E1
e
L
θ
»
Marking
3EM
»
Ordering information
Order code
Package
SOT-23
Base qty
3
K
Deliverymode
MMBT
H10
Tape an
d
reel
Revision 2018
4
/
4
