BORN-S9012
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S9012
RHOS
Transistors
SOT-23 Plastic-Encapsulate Transistors(PNP)
Features
SOT-23
As complementary type the NP
N
transistor S9013 is recommended
Epitaxial planar die construction
Maximum Ratings
(
Ratings at 25
℃
ambient temperature unless otherwise specified.)
Symbol
V
CBO
V
CEO
V
EBO
I
C
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Value
-40
Units
V
1. BASE
-25
V
2. EMITTER
3. COLLECTOR
-5
V
Collector Current -Continuous
T
o
tal Device Dissipation
Thermal Resistance Junction to Ambient
Junction
T
e
mperature
-5
00
300
mA
mW
℃
/W
℃
P
C
Marking: 2T1
R
θ
JA
T
J
416
150
T
stg
Storage
T
e
mperature
-55 to +150
℃
Electrical Characteristics
(
Ratings at 25
℃
ambient temperature unless otherwise specified).
Limits
Parameter
Symbols
Test Condition
I
C
=-100uA, I
E
=0
Unit
Min
-40
-25
-5
Max
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CEO
V
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
I
C
=-1mA, I
B
=0
I
E
=-100uA, I
C
=0
V
V
CE
=-20V, I
B
=0
-100
-100
-100
400
nA
nA
nA
I
CBO
V
CB
=-40V, I
E
=0
I
EBO
V
EB
=-5V, I
C
=0
h
FE
V
CE
=-1V, I
C
=-50mA
I
C
=-500mA, I
B
=-50mA
I
C
=-500mA, I
B
=-50mA
V
CE
=-6V, I
C
=-20mA,f=30MHz
V
CB
=-10V, I
E
=0, f=1MHz
120
150
DC current gain
V
CE(sat)
V
BE(sat)
f
T
-0.60
-1.20
V
V
Collector-emitter saturation voltage
Base -emitter saturation voltage
Transition frequency
MHz
pF
Cob
5
Collector output capacitance
CLASSIFICATION OF h
FE(1)
RANK
L
H
J
RANGE
120-200
200-350
300-400
Page 1 of 2
Rev 8: Nov 2014
S9012
RHOS
Transistors
SOT-23 Plastic-Encapsulate Transistors(PNP)
Page 2 of 2
Rev 8: Nov 2014
