BORN-S9014

S9014  

RHOS  

Transistors  

SOT-23 Plastic-Encapsulate Transistors(NPN)  

SOT-23  

Features  

As complementary type the PNP transistor S9015 is recommended  

Epitaxial planar die construction  





Maximum Ratings  

(

Ratings at 25

℃

ambient temperature unless otherwise specified.)  

Symbol  

V

CBO  

Parameter  

Collector-Base Voltage  

Collector-Emitter Voltage  

Emitter-Base Voltage  

Value  

Units  

V

50  

45  

1. BASE  

V

CEO  

V

2. EMITTER  

3. COLLECTOR  

V

EBO  

5

V

Collector Current -Continuous  

T

o

tal Device Dissipation  

Thermal Resistance Junction to Ambient  

Junction

T

e

mperature  

100  

mA  

mW  

℃

/W  

℃

C

P

C  

200  

MARKING: 1AM  

R

θ

JA  

T

J  

625  

150  

T

stg  

Storage

T

e

mperature  

-55 to +150  

℃

Electrical Characteristics  

(

Ratings at 25

℃

ambient temperature unless otherwise specified).  

Limits  

Test Condition  

I

C

=100uA, I

E

=0  

Unit  

Parameter  

Symbols  

Min  

50  

45  

5

Max  

V

(BR)CBO  

V

(BR)CEO  

V

(BR)EBO  

I

CEO  

V

V

Collector-base breakdown voltage  

Collector-emitter breakdown voltage  

Emitter-base breakdown voltage  

Collector cut-off current  

Collector cut-off current  

Emitter cut-off current  

I

C

=0.1mA, I

B

=0  

I

E

=100uA, I

C

=0  

V

V

CE

=35V, I

B

=0  

100  

100  

nA  

nA  

nA  

I

CBO  

V

CB

=50V, I

E

=0  

I

EBO  

V

EB

=3V, I

C

=0  

100  

h

FE  

V

CE

=5V, I

C

=1mA  

I

C

=100mA, I

B

=5mA  

I

C

=100mA, I

B

=5mA  

V

CE

=5V, I

C

=10mA,f=30MHz  

200  

150  

1000  

0.30  

1.00  

DC current gain  

V

CE(sat)  

V

BE(sat)  

f

T  

V

V

Collector-emitter saturation voltage  

Base -emitter saturation voltage  

Transition frequency  

MHz  

CLASSIFICATION OF h

FE(1)  

RANK  

L

H

RANGE  

200-450  

450-1000  

Page 1 of 2  

Rev 8: Nov 2014  

S9014  

RHOS  

Transistors  

SOT-23 Plastic-Encapsulate Transistors(NPN)  

Page 2 of 2  

Rev 8: Nov 2014