BORN-S9015

S9015  

RHOS  

Transistors  

SOT-23 Plastic-Encapsulate Transistors(PNP)  

Features  

SOT-23  

As complementary type the NP

N

transistor S9014 is recommended  





Epitaxial planar die construction  

Maximum Ratings  

(

Ratings at 25

℃

ambient temperature unless otherwise specified.)  

Symbol  

V

CBO  

V

CEO  

V

EBO  

I

C  

Parameter  

Collector-Base Voltage  

Collector-Emitter Voltage  

Emitter-Base Voltage  

Value  

-50  

Units  

V

1. BASE  

-45  

V

2. EMITTER  

3. COLLECTOR  

-5  

V

Collector Current -Continuous  

T

o

tal Device Dissipation  

Thermal Resistance Junction to Ambient  

Junction

T

e

mperature  

-1

00  

200  

mA  

mW  

℃

/W  

℃

P

C  

R

θ

JA  

T

J  

625  

MARKING: 2A  

150  

T

stg  

Storage

T

e

mperature  

-55 to +150  

℃

Electrical Characteristics  

(

Ratings at 25

℃

ambient temperature unless otherwise specified).  

Parameter  

Symbol  

V

CBO  

Test  

conditions  

MIN  

MAX  

UNIT  

Collector-base breakdown voltage  

Collector-emitter breakdown voltage  

Emitter-base breakdown voltage  

I

C

=-10

μ

A, I

E

=0  

I

C

=-1mA, I

B

=0  

I

E

=-10

μ

A, I

C

=0  

-50  

-45  

-5  

V

V

V

V

CEO  

V

EBO  

Collector cut-off

 

current  

Emitter cut-off

 

current  

I

CBO  

I

EBO  

V

CB

=-50

V

,

I

E

=0  

V

EB

=-5

V

,

I

C

=0  

-0.1  

-0.1  

μ

A  

μ

A  

DC current gain  

h

FE(2)  

V

CE

=-5

V

,

I

C

= -1mA  

200  

150  

1000  

Collector-emitter saturation voltage  

Base-emitter saturation voltage  

Transition frequency  

V

CE(sat)  

V

BE(sat)  

f

T  

I

C

=-100mA, I

B

= -10mA  

-0.3  

-1  

V

V

=-100mA, I

B

= -10mA  

I

C  

MHz  

V

CE

=-5

V

,

I

C

=-10mA,

f=

30MHz  

CLASSIFICATION OF

 

h

FE(1)  

Rank  

L

H

Range  

200-450  

450-1000  

Page 1 of 2  

Rev 8: Nov 2014  

S9015  

RHOS  

Transistors  

SOT-23 Plastic-Encapsulate Transistors(PNP)  

Page 2 of 2  

Rev 8: Nov 2014