BORN-SI2301

SI2301-P  

MOSFET  

ROHS  

P-Channel MOSFET  

SOT

–

–

2

3  

Features  

Advanced trench process technology  

High Density Cell Design For  

Ultra Low On-Resistance  





Maximum Ratings & Thermal Characteristics  

(

Ratings at 25

 

ambient temperature unless otherwise specified.)  

℃

Parameter  

Symbol  

Limit  

-20  

Unit  

Drain-Source Voltage  

Gate-Source Voltage  

Continuous Drain Current  

Pulsed Drain Current

1)  

V

DS  

V

GS  

I

D  

V

±10  

-3  

A

I

DM  

P

D  

-10  

TA = 25

o  

1.25  

0.8  

Maximum Power Dissipatio

n

2)  

W

TA = 75

o

C  

Operating Junction and Storage

T

e

mperature Range  

T

J

, T

stg  

-55 to 150  

Junction-to-Ambient Thermal Resistance (PCB mounted)

2)  

100  

166  

R

thJA  

Junction-to-Ambient Thermal Resistance (PCB mounted)

3)  

Notes  

1)  

Pulse width limited by maximum junction temperature.  

2)  

Surface Mounted on FR4 Board, t

 

v

5 sec.  

3)  

Surface Mounted on FR4 Board.  

Electrical Characteristics  

(

Ratings at 25

℃

ambient temperature unless otherwise specified).  

Symbol  

Min.  

-20  

Parameter  

Test Condition  

Typ.  

Max.  

Unit  

Static  

Drain-Source Breakdown Voltage  

BV

DSS

V

GS

= 0

V

, I

D

= -250uA  

V

m

Ω

 

V

V

GS

= -4.5

V

,

I

D

= -3.0A  

R

DS(on)  

64  

89  

110  

140  

1)  

Drain-Source On-State Resistance  

V

GS

= -2.5

V

,

I

D

= -2.0A  

Gate Threshold Voltage  

V

GS(th)

V

DS

=V

GS

, I

D

= -250uA  

0.4  

1

V

-1  

I

DSS  

Zero Gate Voltage Drain Current 0  

uA  

o

= -16

V

, V

GS

= 0V

 

TJ=55  

C

V

DS  

-10  

Gate Body Leakage  

Forward Transconductance

1)  

Dynamic  

I

GSS  

g

fs  

V

GS

= ± 10

V

, V

DS

= 0V  

V

DS

= -5

V

, I

D

= -2.8A  

±100  

nA  

S

6.5  

T

o

tal Gate Charge  

Q

g  

Q

gs  

Q

gd  

t

d(on)  

t

r  

5.8  

0.85  

1.7  

13  

10  

V

DS

= -6

V

, I

D

-2.3A  

^

nC  

ns  

Gate-Source Charge  

Gate-Drain Charge  

Turn-On Delay Time  

Turn-On Rise Time  

Turn-Off Delay Time  

Turn-Off Fall Time  

V

GS

= -4.5V  

25  

60  

70  

60  

V

DD

= -6

V

, RL=6

Ω  

36  

I

D

-1.A, V  

^

= -4.5V  

GEN  

t

d(off)  

t

f  

42  

R

G

= 6  

Ω

34  

Input Capacitance  

C

iss  

C

oss  

C

rss  

415  

223  

87  

V

DS

= -6

V

, V

GS

= 0V  

f = 1.0 MHz  

pF  

Output Capacitance  

Reverse Transfer Capacitance  

Source-Drain Diode  

Max. Diode Forward Current  

I

S  

-1.6  

A

Diode Forward Voltage  

V

SD  

I

S

= -1.0A, V

GS

= 0V  

-1.2  

V

-0.8  

1)  

Pulse test: pulse width <= 300us, duty cycle<= 2%  

Page 1 of 3  

Rev 8: Nov 2014  

SI2301-P  

MOSFET  

ROHS  

P-Channel MOSFET  

Vds Drain-Source Voltage (V)  

I

D

– Drain Current (A)  

Figure 1 Output CHARACTERISTICS  

Figure 2 Drain-Source On-Resistance  

Vgs Gate-Source Voltage (V)  

T

J

-Junction

T

e

mperature(

℃

)  

Figure 3 Transfer Characteristics  

Figure 4 Drain-Source On-Resistance  

Vgs Gate-Source Voltage (V)  

Vds Drain-Source Voltage (V)  

Figure 5 Rdson vs Vgs  

Figure 6 Capacitance vs Vds  

Qg Gate Charge (nC)  

Vsd Source-Drain Voltage (V)  

Figure 7 Gate Charge  

Figure 8 Source- Drain Diode Forward  

Page 2 of 3  

Rev 8: Nov 2014  

SI2301-P  

MOSFET  

ROHS  

P-Channel MOSFET  

SO

T

–

23 PACKAGE

 

OUTLINE

Plastic surface mounted package  

SOT-23  

(UNIT)

：

mm  

Page 3 of 3  

Rev 8: Nov 2014