BORN-ULN2803QN

ULN2

803Q

N

series High-voltage High-current Darlington Transistor Arrays  

Features  

Package  

• 500-mA-Rated

 

Collector Current(single output)  

• High-Voltage

 

Outputs: 50V  

• Inputs

 

Compatible With Various Types of Logic  

• Output

 

Clamp Diodes  

• Relay-Driver

 

Applications  

General Description  

The

ULN

2803Q

N

is high-voltage high-current Darlington transistor arrays each containing seven open collector common  

emitter pairs. Each pair is rated at 500mA. Suppression diodes are included for inductive load driving, the inputs and outputs are  

pinned in opposition to simplify board layout.These devices are capable of driving a wide range of loads including solenoids,  

relays, DC motors, LED displays, filament lamps, thermal print-heads and high-power buffers.  

Connection Diagram  

1C 2C

 

3C 4C  

17 16

 

15 14  

5C 6C

 

7C 8C  

12 11

 

10  

13  

9

COM  

GND  

8

19 20 1  

2

3

4

5

6

1B 2B

 

3B 4B  

5B 6B

 

7B 8B  

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RIGHT RESERVED  

Specifications are subject to change without notice.  

Page:1  

Revision: 2022-Jan-1  

Please refer to http://

for current information.  

ULN

2803Q

N

series High-voltage High-current Darlington Transistor Arrays  

Pin Description  

QFN4X4-20L  

Top Marking  

Pin Number  

Name  

3B  

Function  

Input pair3  

Input pair4  

Input pair5  

Input pair6  

Input pair7  

Input pair8  

NC  

Pin Number  

Name  

7C  

Function  

Output pair7  

Output pair6  

Output pair5  

Output pair4  

Output pair3  

Output pair2  

Output pair1  

NC  

1

2

11  

12  

13  

14  

15  

16  

17  

18  

19  

20  

4B  

6C  

3

5B  

5C  

4

6B  

4C  

5

7B  

3C  

6

8B  

2C  

7

NC  

E

1C  

8

CE(ground)  

CC Diodes  

Output pair8  

NC  

1B  

9

COM  

8C  

Input pair1  

Input pair2  

10  

2B  

NOTE: CE(ground)= Common Emitter (ground);

 

CC Diodes = Common Clamp Diodes  

BORN SEMICONDUCTOR , INC. ALL  

RIGHT RESERVED  

Specifications are subject to change without notice.  

Page:2  

Revision: 2022-Jan-1  

Please refer to http://

for current information.  

ULN

2803Q

N

series High-voltage High-current Darlington Transistor Arrays  

Functional Block Diagram  

COM  

Output  

R

B

=2.7k

Ω

 

C

E

Input  

B

7.2k

Ω

 

3k

Ω  

Note: All resistor values shown are nominal.  

The collentor-emitter diode is a parasitic structure and should not be used to conduct current.If the collector(s) go below ground an  

external Schoottky diode should be added to clamp negative undershoots.  

Absolute Maximum Ratings

 

(At 25°C free-air temperature unless otherwise noted)(1)  

Symbol  

V

CC  

V

COM  

V

I  

Parameter  

Collector to emitter voltage  

voltage of Pin COM  

Min  

Max  

50  

Units  

V

-0.5  

50  

V

Input voltage  

-0.5  

30  

V

I

CP  

Peak collector current (See typical characteristics)  

Output clamp current  

500  

500  

-2.5  

150  

150  

1.3  

mA/ch  

mA  

A

W

I

OK  

I

TE  

T

o

tal emitter-terminal current  

Operating virtual junction temperature  

Storage temperature range  

Power consumption  

T

J  

T

STG  

P

D  

-65  

(1) Stresses beyond those listed under ”absolute maximum ratings” may cause permanent damage to the device.

 

These are stress ratings  

only, and functional operation of the device at these or any other conditions beyond those indicated under ”recommended operating  

conditions” is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.  

(2) All voltage values are with respect to the emitter/substrate terminal E, unless otherwise noted.  

(3) Maximum power dissipation is a function of T

J

(max), θ

JA

, and T

A

. The

 

maximum allowable power dissipation at any allow able  

ambient temperature is PD = (T

J

(max)–T

A

)/θ

JA

. Operating at the absolute maximum T

J

of 150°C can affect reliability.  

(4) Maximum pow er dissipation is a function of T

J

(max), θ

JC

, and T

A

. The

 

maximum allow able pow er dissipation at any allow able  

ambient temperature is PD = (T

J

(max)–T

A

)/θ

JC

. Operating at the absolute maximum T

J

of 150°C can affect reliability.  

BORN SEMICONDUCTOR , INC. ALL  

RIGHT RESERVED  

Specifications are subject to change without notice.  

Page:3  

Revision: 2022-Jan-1  

Please refer to http://

for current information.  

ULN

2803Q

N

series High-voltage High-current Darlington Transistor Arrays  

Typical Characteristics  

Symbol  

Parameter  

Min  

–

Max  

50  

Units  

V

V

CE  

T

A  

Collector to emitter voltage  

Operating Ambient

T

e

mperature  

-40  

+105  

Electrical Characteristics

 

(

T

A

=+25

◦

C, unless otherwise specified)  

Test  

BE2803Q  

MIN TYP  

Parameter  

Test Conditions  

Unit  

Figure  

MAX  

2.4  

2.7  

3

I

C

= 200 mA  

I

C

= 250 mA  

I

C

= 300 mA  

I

C

= 100 mA  

I

C

= 200 mA  

I

C

= 350 mA  

I

I

= 0  

–

–

–

–

–

–

–

–

–

V

I

(

on

)  

On-state input voltage  

Figure 6  

V

CE

= 2 V  

V

–

I

I

= 250 μA  

I

I

= 350 μA  

I

I

= 500 μA  

V

CE

= 50 V,  

V

CE

= 50 V;  

T

A

= +105°C  

I

F

= 350 mA  

0.9  

1

1.1  

1.3  

1.6  

50  

V

CE

(

sat

)  

Collector-emitter saturation voltage  

Collector cutoff current  

Figure 5  

V

1.2  

–

Figure 1  

Figure 2  

I

CEX  

μA  

I

I

= 0  

–

–

100  

V

F  

Clamp forw ard voltage  

Off-state input current  

Figure 8  

Figure 3  

–

1.7  

65  

0.93  

–

2

–

V

I

I

(

off

)  

V

CE

= 50 V,I

C

= 500 μA  

V

I

= 3.85 V  

V

I

= 5 V  

50  

–

μA  

1.35  

–

I

I  

Input current  

Figure 4  

Figure 7  

–

mA  

V

I

= 12 V  

–

–

–

T

A

= 25°C  

–

–

50  

100  

25  

I

R  

Clamp reverse current  

Input capacitance  

V

R

= 50 V  

μA  

pF  

T

A

= 70°C  

–

–

C

i  

V

I

= 0, f = 1 MHz  

–

15  

Switching Characteristics

 

(

T

A

= +25°C, unless otherwise specified)  

BE2803Q  

TYP  

Parameter  

Test Conditions  

Figure 9  

Unit  

μs  

MIN  

MAX  

Propagation delay time,  

low – to high-level output  

Propagation delay time,  

high- to low -level output  

High-level output voltage  

after switching  

t

PLH  

t

PHL  

V

OH  

–

0.25  

0.25  

–

1

Figure 9  

–

1

–

μs  

V

S

= 50 V, I

O

= 300 mA  

Figure 9  

V

S

–20  

mV  

BORN SEMICONDUCTOR , INC. ALL  

RIGHT RESERVED  

Specifications are subject to change without notice.  

Page:4  

Revision: 2022-Jan-1  

Please refer to http://

for current information.  

ULN

2803Q

N

series High-voltage High-current Darlington Transistor Arrays  

Parameter Measurement Information  

Open V

CE  

Open V

CE  

Open  

V

I  

I

CEX  

I

CEX  

Fig.1 I

CEX

Test Circuit  

Fig.2 I

CEX

Test Circuit  

Open  

Open V

CE  

I

C  

I

I(on)  

I

I(off)  

Open  

Fig.3 I

I(off)

Test Circuit  

Fig.4 I

I

Test Circuit  

Open  

Open  

V

I(on)  

V

CE  

I

C  

V

CE  

I

I  

I

I  

I

C  

Fig.5 h

fe

, V

CE(sat)

Test Circuit  

Fig.6 V

I(on)

Test Circuit  

V

R  

I

R  

Open  

V

F  

I

F  

Open  

Fig.7 I

R

Test Circuit  

Fig.8 V

F

Test Circuit  

BORN SEMICONDUCTOR , INC. ALL  

RIGHT RESERVED  

Specifications are subject to change without notice.  

Page:5  

Revision: 2022-Jan-1  

Please refer to http://

for current information.  

ULN

2803Q

N

series High-voltage High-current Darlington Transistor Arrays  

V

S

2mH  

Open  

Input  

1N3064  

200

Ω

 

Pulse  

Generator  

Output  

C

L

=15pF  

(Note 9)  

(Note 8)  

t

ON

, t

OFF

Test Circuit  

t

r  

t

f  

90%  

50%  

90%  

(Note 10)  

50%  

10%  

40

μ

s  

Input  

0

t

PLH  

t

PHL  

Output  

V

OH  

50%  

50%  

V

OL  

Voltage Waveform  

Fig.9 Latch-Up

 

Test Circuit and Voltage Waveform  

Notes:  

8. The pulse generator has the follow ing characteristics: Pulse Width=12.5Hz, output impedance 50Ω, t

f

≤5ns, t

f

≤10ns.  

9. C

L

includes prove and jig capacitance.  

10 V

IH

=3V  

BORN SEMICONDUCTOR , INC. ALL  

RIGHT RESERVED  

Specifications are subject to change without notice.  

Page:6  

Revision: 2022-Jan-1  

Please refer to http://

for current information.  

ULN

2803Q

N

series High-voltage High-current Darlington Transistor Arrays  

QFN4X4-20L Package Specifications  

E

SYMBOL  

A

MIN  

TYP  

MAX  

0.500  

0.600  

0.800  

0.050  

0.211  

4.100  

4.100  

2.675  

2.675  

0.400 0.450  

0.500 0.550  

0.700 0.750  

D

A1  

A2  

D

0.00  

0.195 0.203  

3.900 4.00  

–

E

3.900 4.000  

2.625 2.650  

2.625 2.650  

D1  

E1  

k

0.150MIN.  

0.200 0.250  

0.500TY

P

.  

0.300 0.400  

b

b

0.300  

0.500  

e

L

D

1

 

Note:All dimensions shown are in millimeters (mm) and refer to JEDEC STANDARD MO-220 WHHD-4  

BORN SEMICONDUCTOR , INC. ALL  

RIGHT RESERVED  

Specifications are subject to change without notice.  

Page:7  

Revision: 2022-Jan-1  

Please refer to http://

for current information.