CBI-2N3906U

Part #	CBI-2N3906U
Download	CBI-2N3906U

Plastic-Encapsulate Transistors

TRANSISTOR (PNP)

FEATURES

z

z

z

Compliment to 2N3904U

Low current

Low voltage

MARKING:

2A

MAXIMUM RATINGS (T

a

=25

℃

unless otherwise noted)

Symbol

V

CBO

V

CEO

V

EBO

I

C

Para

m

eter

V

alue

Units

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

-40

V

V

-40

-6

V

Collector Current -Continuous

Collector Power Dissipation

-0.2

0.5

A

P

C

W

Thermal resistance

from

j

uncti

on

25

0

R

θ

℃

/W

℃

JA

to ambient

T

J

Junction

T

e

mperature

150

T

stg

Storage

T

e

mperature

-55-150

℃

ELECTRICAL CHARACTERISTICS (Ta=25

℃

unless otherwise specified)

Parameter

Symbol

T

e

st conditions

Min

-40

-40

-6

Typ

Max

Unit

V

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

V

(BR)CBO

I

C

=-10

μ

A,I

E

=0

V

(BR)CEO

I

C

=-1mA,I

B

=0

V

(BR)EBO

I

E

=-10

μ

A,I

C

=0

V

V

I

CBO

V

CB

=-30

V

,

I

E

=0

-0.05

-0.0

5

-0.

05

μ

A

μ

A

μ

A

V

EB

=-6

V

,

I

C

=0

Emitter

cut-off current

Collector

ut-off current

EBO

I

C

EX

V

CB

=-30

V

,

V

BE(off)

=-3V

V

CE

=-1

V

,

I

C

=-0.1mA

V

CE

=-1

V

,

I

C

=-1mA

V

CE

=-1

V

,

I

C

=-10mA

V

CE

=-1

V

,

I

C

=-50mA

V

CE

=-1

V

,

I

C

=-100mA

h

FE(1)

h

FE(2)

h

FE(3)

h

FE(4)

h

FE(5)

60

80

DC current gain

100

60

300

30

V

CE(sat)1

I

C

=-10mA,I

B

=-1mA

V

CE(sat)2

I

C

=-50mA,I

B

=-5mA

V

BE(sat)1

I

C

=-10mA,I

B

=-1mA

V

BE(sat)2

I

C

=-50mA,I

B

=-5mA

-0.25

-0.4

V

V

Collector-emitter saturation voltage

Base-emitter saturation voltage

-0.65

250

-0.85

-0.95

V

V

Transition frequency

Collector capacitance

Emitter capacitance

f

T

V

CE

=-20

V

,

I

C

=-10mA,f=100MHz

MHz

pF

pF

C

c

Ce

V

CB

=-5

V

,

I

E

=0,f=1MHz

V

EB

=-0.5

V

,

I

C

=0,f=1MHz

V

CE

=-5

V

,

I

c

=-0.1mA,f=10Hz-15.7kHz,

R

S

=1K

Ω

4.5

10

Noise figure

NF

4

dB

Delay time

Rise time

Storage time

Fall time

t

d

t

r

35

35

nS

nS

nS

nS

I

C

=-10mA , I

B1

=-I

B2

= -1mA

t

S

t

f

225

75

1

of

3

Copyright

©

All right reserved

：

Heyuan China Base Electronics Technology Co., Ltd.

h

FE

—— I

C

Static Characteristic

-18

-15

-12

-9

300

200

100

0

COMMON EMITTER

V

CE

=-1V

COMMON

EMITTER

Ta=100

℃

-80uA

-72uA

T

a

=25

℃

-64uA

-56uA

-48uA

-40uA

-32uA

-24uA

-16uA

I

B

=-8uA

Ta=25

℃

-6

-3

-0

-0.0

-0.1

-0.3

-1

-3

-10

-100

-200

-0.5

-1.0

-1.5

-2.0

-2.5

-200

-1.4

-30

COLLECTOR CURRENT

I

C

(mA)

COLLECTOR-EMITTER VOLTAGE

V

CE

(V)

I

C

V

BEsat

——

V

CEsat

—— I

C

-1.2

-0.8

-0.4

-600

-300

T

a

=25

℃

T

a

=100

℃

T

a

=25

℃

-100

T

a

=100

℃

-30

-10

β

=10

-100

-200

β

=10

-0.0

-10

-100

-1

-3

-10

-30

-30

COLLECTOR CURRENT

I

C

(mA)

COLLECTOR CURRENT

I

C

(mA)

I

C

—— V

BE

C

ob

/ C

ib

——

V

CB

/ V

EB

9

-200

-100

COMMON EMITTER

V

CE

=-1V

f=1MHz

I

E

=0/I

C

=0

T

a

=25

℃

C

ob

C

ib

-30

-10

T

a

=100

℃

3

-3

-1

T

a

=25

℃

-0.3

-0.1

1

-0.1

-0.3

-1

-3

-10

-20

-0.2

-0.4

-0.6

-0.8

-1.0

-1.2

REVERSE VOLTAGE

V

(V)

BASE-EMMITER VOLTAGE

V

BE

(V)

f

T

—— I

C

Pc —— Ta

1000

600

V

CE

=-20V

T

a

=25

℃

500

400

300

200

100

0

300

100

-80

-3

-30

-1

-10

0

25

50

75

100

125

150

COLLECTOR CURRENT

I

C

(mA)

AMBIENT TEMPERATURE

Ta

(

℃

)

2

of

3

a

Copyright

©

All right reserved

：

Heyuan China Base Electronics Technology Co., Ltd.

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3

of

3

Copyright

©

All right reserved

：

Heyuan China Base Electronics Technology Co., Ltd.