CBI-2SB772PU

2SB772U  

PNP SILICON EPITAXIAL POWER TRANSISTOR  

These devices are intended for use in audio  

frequency power amplifier and low speed switching  

applications  

MARKING:B772  

O

Absolute Maximum Ratings (T

a

= 25

 

C)  

Parameter  

Collector Base Voltage  

Collector Emitter Voltage  

Emitter Base Voltage  

Symbol  

-V

CBO  

-V

CEO  

-V

EBO  

-I

C  

Value  

40  

30  

5

Unit  

V

V

V

Collector Current  

3

A

-I

CP  

Peak Collector Current (t = 10 ms)  

Base Current  

7

A

-I

B  

P

D  

0.6  

1

A

O

T

o

tal Power Dissipation @ T

a

= 25

 

C  

W

O

T

o

tal Power Dissipation @ T

c

= 25

 

C  

P

D  

10  

W

O

C

Operating and Storage Junction

T

e

mperature Range  

T

j

, T

stg  

– 65 to + 150  

O

Characteristics at T

a

= 25

 

C  

Parameter  

Symbol  

h

FE  

h

FE  

h

FE  

h

FE  

h

FE  

Min.  

Typ.  

Max.  

Unit  

DC Current Gain  

at -V

CE

= 2

V

,

–

I

C

= 20 mA  

at -V

CE

= 2

V

,

–

I

C

= 1 A  

30  

60  

100  

160  

200  

–

–

–

–

–

–

–

–

–

–

–

Current Gain Group  

R

Q

P

E

120  

200  

320  

400  

Collector Base Cutoff Current  

at -V

CB

= 30 V  

-I

CBO  

–

–

1

µA  

Emitter Base Cutoff Current  

at -V

EB

= 3 V  

-I

EBO  

-V

(BR)CBO  

-V

(BR)CEO  

-V

(BR)EBO  

-V

CE(sat)  

-V

BE(sat)  

f

T  

–

40  

30  

5

–

–

–

1

µA  

V

Collector Base Breakdown Voltage  

at -I

C

= 1 mA  

Collector Emitter Breakdown Voltage  

at -I

C

= 1 mA  

–

–

–

V

Emitter Base Breakdown Voltage  

at -I

E

= 1 mA  

–

–

V

Collector Emitter Saturation Voltage  

at -I

C

= 2 A, -I

B

= 200 mA  

–

0.5  

2

–

V

Base Emitter Saturation Voltage  

at -I

C

= 2 A, -I

B

= 200 mA  

–

–

V

Current Gain Bandwidth Product  

at -V

CE

= 5

V

,

–

I

C

= 100 mA,  

–

80  

55  

MHz  

pF  

Output Capacitance  

at -V

CB

= 10

V

, f = 1

M

Hz  

C

ob  

–

–

Page 1 of 3  

7/26/2012  

Static Characteristic  

h

FE

—— I

C  

-1.8  

-1.6  

-1.4  

-1.2  

-1.0  

-0.8  

-0.6  

-0.4  

-0.2  

-0.0  

10000  

1000  

100  

-7.5mA  

-6.75mA  

-6.0mA  

COMMON EMITTER  

T

a

=25

℃

 

COMMON EMITTER  

V

CE

= -2V  

-5.25mA  

-4.5mA  

T

a

=100

℃  

-3.75mA  

-3.0mA  

T

a

=25

℃  

-2.25mA  

-1.5mA  

I

B

=-0.75mA  

10  

-3000  

-0.0  

-0.5  

-1.0  

-1.5  

-2.0  

-2.5  

-3.0  

-3.5  

-1  

-10  

-100  

-1000  

COLLECTOR CURRENT

 

I

C

(mA)  

COLLECTOR-EMITTER VOLTAGE

 

V

CE

(V)  

V

BEsat

—— I

C  

V

CEsat

—— I

C  

-1000  

-100  

-10  

-1500  

-1200  

β

=10  

β

=10  

-900  

-600  

T

a

=100

℃  

T

a

=25

℃  

T

a

=25

℃  

T

a

=100

℃  

-1  

-300  

-3000  

-3000  

-1  

-10  

-100  

-1000  

-1  

-10  

-100  

-1000  

COLLECTOR CURRENT

 

I

C

(mA)  

COLLECTOR CURREMT

 

I

C

(mA)  

I

C

—— V

BE  

f

T

—— I

C  

200  

100  

-3000  

-1000  

COMMON EMITTER  

V

CE

= -2V  

-100  

-10  

-1  

COMMON EMITTER  

V

CE

=-5V  

T

a

=25

℃  

-0.1  

-300  

10  

-4.23  

-400  

-500  

-600  

-700  

-800 -900

 

-100

0

–

110

0

–

1200  

-10  

-100  

BASE-EMMITER VOLTAGE

 

V

BE

(mV)  

COLLECTOR CURRENT

 

I

C

(mA)  

P

C

—— T

a  

0.6  

0.5  

0.4  

0.3  

0.2  

0.1  

0.0  

0

25  

50  

75  

100  

125  

150  

AMBIENT TEMPERATURE

 

T

a

(

℃

)  

Page 2 of 3  

7/26/2012  

2SB772U  

SOT-89 PACKAGE OUTLINE  

Page 3 of 3  

7/26/2012