CBI-2SC1623W

1

2SC1623W  

TRANSISTOR (NPN)  

FEATURE  

SOT- 323  

High DC current gain :h

FE

=200(Typ)V

CE

=6V,  

High voltage: V

CEO

=50V  

I

C

=1mA  

MARKING

：

L6  

MAXIMUM RATINGS (

T

A

=25

℃

unless otherwise noted)  

Symbol  

V

CBO  

Parameter  

Value  

60  

Units  

V

Collector-Base Voltage  

Collector-Emitter Voltage  

Emitter-Base Voltage  

V

CEO  

V

EBO  

50  

V

5

V

I

C  

Collector Current -Continuous  

Collector Power Dissipation  

Junction Temperature  

Storage Temperature  

100  

200  

150  

-55-150  

mA  

mW  

℃

P

C  

T

J  

T

stg  

℃

ELECTRICAL CHARACTERISTICS (Tamb=25

℃

unless otherwise specified)  

Parameter  

Symbol  

Test conditions  

I

C

=

100

µA, I

E

=0  

MIN  

60  

50  

5

TYP  

MAX UNIT  

V

(BR)CBO  

Collector-base breakdown voltage  

Collector-emitter breakdown voltage  

Emitter-base breakdown voltage  

Collector cut-off current  

V

V

V

V

(BR)CEO

I =

1

mA, I

 

=0  

C

B

V

(BR)EBO  

I

CBO  

I

E

=

100

µA, I

C

=0  

V

CB  

E

0.1  

0.1  

400  

0.3  

1

µA  

µA  

I

EBO  

V

EB

=

5

V, I

C

=0  

Emitter cut-off current  

h

FE  

V

CE  

C

200  

DC current gain  

V

CE(sat)  

I

C

=

100

mA, I

B

=

10

mA  

Collector-emitter saturation voltage  

Base-emitter saturation voltage  

Transition frequency  

V

V

BE(sat)

I =

100

mA, I =

10

mA  

C

B

V

f

T  

V

CE

=

6

V, I

C

=

10

mA  

250  

MHz  

1

2

Typical Characteristics  

2SC1623W  

2

3

PACKAGE OUTLINE  

Plastic surface mounted package; 3 leads  

SOT-323  

3