CBI-2SD882PU

2SD882U  

NPN Silicon Power Transistor  

The transistor is subdivided into four groups, R, Q,  

P and E, according to its DC current gain.  

O

Absolute Maximum Ratings (T

a

= 25

 

C)  

Symbol  

V

CBO  

V

CEO  

V

EBO  

I

C  

Value  

Unit  

V

Parameter  

Collector to Base Voltage  

Collector to Emitter Voltage  

Emitter to Base Voltage  

40  

30  

V

5

V

Collector Current  

3

A

Peak Collector Current (t = 10 ms)  

I

CP  

7

A

O

Total power dissipation (T

a

= 25

 

C)  

P

tot  

1

10  

W

W

O

Total power dissipation (T

c

= 25

 

C)  

P

tot  

O

C

Junction Temperature  

T

j  

150  

O

C

Storage Temperature Range  

T

stg  

– 55 to + 150  

O

Characteristics at T

a

= 25

 

C  

Parameter  

Symbol  

Min.  

Typ.  

Max.  

Unit  

DC Current Gain  

at V

CE

= 2 V, I

C

= 20 mA  

at V

CE

= 2 V, I

C

= 1 A

 

Current Gain Group  

h

FE  

h

FE  

h

FE  

h

FE  

h

FE  

30  

60  

100  

160  

200  

–

–

–

–

–

–

–

–

–

–

–

R

120  

200  

320  

400  

Q

P

E

Collector Base Cutoff Current  

at V

CB

= 30 V  

I

CBO  

–

–

–

–

–

–

–

1

1

µA  

µA  

V

Emitter Base Cutoff Current  

at V

EB

= 3 V  

I

EBO  

–

Collector Emitter Saturation Voltage  

at I

C

= 2 A, I

B

= 0.2 A  

V

CE(sat)  

V

BE(sat)  

f

T  

–

0.5  

Base Emitter Saturation Voltage  

at I

C

= 2 A, I

B

= 0.2 A  

–

2

–

V

Gain Bandwidth Product  

at V

CE

= 5 V, I

C

= 0.1 A  

Output Capacitance  

90  

45  

MHz  

pF  

C

ob  

–

at V

CB

= 10 V, f = 1 MHz  

Page 1 of 3  

7/26/2012  

2SD882U  

TYPICAL CHARACTERISTICS (Ta=25

o

C)  

TOTAL POWER DISSIPATION vs.  

AMBIENT TEMPERATURE  

THERMAL RESISTANCE vs.  

PULSE WIDTH  

DERATING CURVES FOR ALL TYPES  

NOTE  

V

CE

=10V  

I

C

=1.0A  

Duty=0.001  

1.Aluminum heat sink  

of 1.0 mm thickness.  

2.With no insulator film.  

3.With silicon compound.  

30  

10  

100  

80  

10  

3

8

6

60  

40  

1

4

2

0.3  

20  

0

0

0.1  

0.3  

1

3

10 30  

100 300

 

1000  

0

50  

100  

150  

50  

100  

150  

PW-Pulse Width-mS  

T

a

-Ambient Temperature

–

o  

C

Tc-Case Temperature –

o  

C

DC CURRENT GAIN, BASE TO EMITTER  

VOLTAGE vs. COLLECTOR CURRENT  

COLLECTOR CURRENT vs.  

COLLECTOR TO EMITTER VOLTAGE  

SAFE OPERATING AREAS  

1000  

300  

2.0  

1.6  

1.2  

V

CE

=2.0V  

Pulse Test  

Pulse Test  

10  

3

I

C

(pulse) MAX.(PW

 

10ms,Duty Cycle

 

50%)  

I

C

(DC) MAX.  

10  

9

8

h

FE  

100  

60  

7

1

30  

6

3

5

0.3  

0.8  

0.4  

4

10  

6

1

0.6  

V

BE  

0.1  

3

2

0.3  

0.1  

3

NOTE  

1.T

C

=25

o  

C

I

B

=1mA  

0.03  

2.Curves must be derated  

Iinearly with increase of  

temperature and Duty Cycle.  

1

10  

0.00

1

0

.003 0.01

 

0.03 0.1

 

0.3  

1

3

0

0.01  

4

8

12  

16  

20  

1

3

6

10  

30 60

 

100  

I

C

-Collector Current-A  

o

V

CE

-Collector to Emitter Voltage-V  

V

CE

-Collector to Emitter Voltage-V  

BASE AND COLLECTOR SATURATION  

VOLTAGE vs. COLLECTOR CURRENT  

GAIN BANDWIDTH PRODUCT vs.  

COLLCETOR CURRENT  

INPUT AND OUTPUT CAPACITANCE vs.  

REVERSE VOLTAGE  

1000  

300  

10  

f=1.0MHz  

I

E

=0(C

ob

)  

I

C

=0(C

ib

)  

V

CE

=5.0V  

Forced air  

cooling  

I

C

=10.I

B  

Pulse Test  

3

300  

(with heat sink)  

1

0.6  

0.3  

V

BE(sat)  

C

ib  

100  

30  

100  

60  

0.1  

0.06  

30  

C

ob  

0.03  

V

CE(sat)  

10  

3

10  

6

0.01  

0.006  

0.003  

3

0.001 0.003 0.01

 

0.03 0.1

 

0.3  

1

3

10  

1

1

0.01  

0.03  

0.1  

0.3  

1

3

6

10  

30  

60  

I

C

-Collector Current-A  

I

C

-Collcetor Current-A  

V

CB

-Collector to Base Voltage-V  

V

EB

-Emitter to Base Voltage-V  

Page 2 of 3  

7/26/2012  

2SD882U  

SOT-89 PACKAGE OUTLINE  

Page 3 of 3  

7/26/2012