CBI-BC3415
| Part # | CBI-BC3415 |
Download  | CBI-BC3415 |
Plastic-Encapsulate MOSFETS
P-Channel 20-V(D-S) MOSFET
SOT-23
I
D
V
(BR)DSS
R
DS(on)
MAX
@-4.5V
Ω
50m
@-2.5V
60mΩ
-2
0
V
-4A
1. GATE
@-1.8V
Ω
100m
2. SOURCE
3. DRAIN
APPLICATION
Load switch and in PWM applicatopns
FEATURE
Excellent R
DS(ON)
, low gate charge,low gate voltages
MARKING
Equivalent Circuit
D
G
S
Maximum ratings (T
a
=25
℃
unless otherwise noted)
Value
Parameter
Symbol
Unit
Drain-Source Voltage
Gate-Source Voltage
V
DS
V
GS
I
D
-20
±8
V
Continuous Drain Current (t≤10s)
Maximum Power Dissipation (t≤10s)
Thermal Resistance from Junction to Ambient
Operating Junction Temperature
Storage Temperature
-4.0
A
P
D
0.35
W
R
θJA
T
J
357
℃
/W
150
℃
℃
T
STG
-55 ~+150
1 of
4
Copyright
©
All right reserved:
Heyuan China Base Electronics Technology Co., Ltd.
M
OSFET ELE
C
T
R
I
CA
L
CHARAC
TE
R
ISTI
C
S
T =25
unless otherwise specified
℃
Parameter
Symbol
Test Condition
Min
Typ
Max
Units
V
Static Parameters
Drain-source breakdown voltage
Gate threshold voltage
V
(BR) DSS
V
GS
= 0V, I
D
=-250µA
-20
V
GS(th)
V
DS
=V
GS
, I
D
=-250µA
V
DS
=0V, V
GS
=±8V
V
DS
=0V, V
GS
=±4.5V
V
DS
=-16V, V
GS
=0V
V
GS
=-4.5V, I
D
=-4A
V
GS
=-2.5V, I
D
=-4A
V
GS
=-1.8V, I
D
=-2A
V
DS
=-5V, I
D
=-4A
I
S
=-1A,V
GS
=0V
-0.3
-0.56
-1
±10
±1
Gate-body leakage current
I
GSS
µA
-1
Zero gate voltage drain current
I
DSS
0.037 0.050
0.045 0.060
0.080 0.100
Drain-source on-state resistance(note1)
R
DS(on)
Ω
8
Forward transconductance(note2)
Body diode voltage(note2)
Dynamic Parameters
(note3)
Input capacitance
g
FS
S
V
-1
V
SD
C
iss
C
oss
C
rss
R
g
1450
205
160
6.5
V
DS
=-10V,V
GS
=0V,f =1MHz
V
DS
=0V,V
GS
=0V,f =1MHz
pF
Ω
Output capacitance
Reverse transfer capacitance
Gate resistance
Switching Parameters
Total gate charge
Q
g
Q
gs
Q
gd
t
d(on)
t
r
17.2
1.3
4.5
9.5
17
V
DS
=-10V,V
GS
=-4.5V,I
D
=-4A
nC
ns
Gate-Source charge
Gate-drain charge
Turn-on delay time (note3)
Turn-on rise time(note3)
Turn-off delay time(note3)
Turn-off fall time(note3)
Notes:
V
DS
=-10V,
V
GS
=-4.5V
R
GEN
=3
Ω
,
R
L
=2.5
Ω
,
t
d(off)
t
f
94
35
1. Repetitive rating,pulse width limited by junction temperature.
2. Pulse
T
e
st : Pulse width
≦
300µs, duty cycle
≦
2%.
3. These parameters have no way to verify.
2
of
4
Copyright
©
All right reserved
:
Heyuan China Base Electronics Technology Co., Ltd.
Typ
i
ca
l
Character
i
st
i
cs
Output Characteristics
Transfer Characteristics
-20
-1.6
-1.4
-1.2
V
DS
=-16V
Pulsed
-15
-10
-5
-1.0
-0.8
-0.6
-0.4
-0.2
-0.0
T
a
=100
℃
T
a
=25
℃
-0
-0.0
-0.5
-1.0
-1.5
-2.0
-2.5
(V)
-3.0
-0.0
-0.2
-0.4
-0.6
-0.8
(V)
-1.0
DRAIN TO SOURCE VOLTAGE
V
DS
GATE TO SOURCE VOLTAGE
V
GS
R
DS(ON)
——
I
D
——
R
DS(ON)
80
V
GS
60
Ta=25
℃
Pulsed
VGS=-1.8V
70
60
50
40
30
20
50
VGS=-2.5V
40
VGS=-4.5V
30
-0
-2
-3
-4
-5
-6
-7
-8
-9
-10
-2
-4
-6
-8
-10
GATE TO SOURCE VOLTAGE
V
GS
(V)
DRAIN CURRENT
I
D
(A)
I
S
——
Threshold Voltage
-10
-1
-0.9
V
SD
Ta=25
℃
Pulsed
-0.8
-0.7
-0.6
-0.5
-0.4
-0.3
-0.2
-0.1
-0.0
-0.1
-0.01
-1E-3
-1E-4
-1E-5
I
D
=-250uA
-0.0
-0.2
-0.4
-0.6
-0.8
-1.0
(V)
-1.2
25
50
75
100
(
125
SOURCE TO DRAIN VOLTAGE
V
SD
JUNCTION TEMPERATURE
T
J
℃
)
3
of
4
Copyright
©
All right reserved
:
Heyuan China Base Electronics Technology Co., Ltd.
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
SOT-23
4
of
4
Copyright
©
All right reserved
:
Heyuan China Base Electronics Technology Co., Ltd.
