CBI-BC847B

Part #CBI-BC847B
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CBI-BC847B
TRANSISTOR
(
NPN
)  
FE
A
TURE  
SOT-23  
Ideally suited for automatic insertion  
For Switching and AF Amplifier Applications  
1
.
BASE  
2
.
EMITTER  
3
.
COLLECTOR  
MAXIMUM RATINGS (T

A

=25
℃
unless otherwise noted)  
Symbol  
Parameter  
Value  
Units  
80  
V
V

CBO  

Collector-Base Voltage  
BC846  
BC847  
BC848  
50  
30  
V
V

CEO  

Collector-Emitter Voltage  
BC846  
BC847  
65  
45  
30  
B
C848  
Emitter-Base Voltage  
6
0.1  
V
A
V

EBO  

I

C  

Collector Current –Continuous  
Collector Power Dissipation  
Junction
T
e
mperature  
200  
mW  
℃
P

C*  

T

J  

150  
℃
Storage Temperature  
-65-150  
T

stg  

DEVICE MARKING  
BC846A=1A; BC846B=1B;  
BC847A=1E; BC847B=1F; BC847C=1G;  
BC848A=1J; BC848B=1K: BC848C=1L  
1 5  
of  
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©
A
ll right reserved
:
H
eyuan China Base Electronics Technology Co., Ltd.  

ELECTRICAL CHARACTERISTICS (Tamb=25
℃
unless otherwise specified)  
Symbol  
Test conditions  
MIN  
80  
50  
30  
65  
45  
30  
6
TYP MAX
 
UNIT  
Parameter  
Collector-base breakdown voltage  
BC846  
BC847  
BC848  
BC846  
BC847  
BC848  
V

CBO  

I

C

= 10µA,
 
I

E

=0  
V
Collector-emitter breakdown voltage  
V

CEO  

V

EBO  

I

C

= 10mA,
 
I

B

=0  
V
V
I

E

= 10µA,
 
I

C

=0  
V

CB

=70 V ,
 
I

E

=0  
V

CB

=50 V ,
 
I

E

=0  
V

CB

=30 V ,
 
I

E

=0  
V

CE

=60 V ,
 
I

B

=0  
V

CE

=45 V ,
 
I

B

=0  
Emitter-base breakdown voltage  
Collector cut-off current  
BC846  
BC847  
BC848  
BC846  
BC847  
BC848  
I

CB  

0.1  
0.1  
µA  
O
Collector cut-off current  
I

CE  

µA  
µA  
O
V

CE

=30 V ,
 
I

B

=0  
I

EBO  

V

EB

=5 V ,
 
I

C

=0  
0.1  
220  
450  
800  
0.5  
Emitter cut-off current  
DC current gain  
110  
200  
420  
BC846A,847A,848A  
BC846B,847B,848B  
BC847C,BC848C  
h

FE  

V

CE

= 5V,
 
I

C

= 2mA  
V

CE

(sat) I

C

=100mA, I

B

= 5mA  
V

BE

(sat) I

C

=100mA, I

B

= 5mA  
V

CE

= 5
V
,
 
I

C

= 10mA  
V
V
Collector-emitter saturation voltage  
Base-emitter saturation voltage  
1.1  
100  
MHz  
pF  
Transition frequency  
f

T  

f=
100MHz  
4.5  
C

ob  

Collector output capacitance  
V

CB

=10
V
,
f
=
1
MHz  
2 5  
of  
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©
A
ll right reserved
:
H
eyuan China Base Electronics Technology Co., Ltd.  

Typical Characteristics  
BC846A,B;BC847A, B, C;BC848A, B, C  
3 5  
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ll right reserved
:
H
eyuan China Base Electronics Technology Co., Ltd.  

4
5
of  
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©
All right reserved
:
Heyuan China Base Electronics Technology Co., Ltd.  

PACKAGE OUTLINE  
Plastic surface mounted package; 3 leads  
SOT-23  
5
of
5  
Copyright
©
All right reserved
:
 
Heyuan China Base Electronics Technology Co., Ltd.