CBI-BCX53

Plastic-Encapsulate Transistors  

TRANSISTOR (PNP)  

FEATURES  

z

z

z

NPN Complements to BCX54,BCX55,BCX56  

Low Voltage  

High Current  

APPLICATIONS  

z

z

Medium Power General Purposes  

Driver Stages of Audio Amplifiers  

MARKING:BCX51:AA, BCX51-10:AC, BCX51-16:AD  

BCX52:AE, BCX52-10:A

G

,

 

B

CX52-16:AM  

BCX53:A H, BCX53-10:AK, BCX53-16:AL  

MAXIMUM RATINGS (T

a

=25

℃

unless otherwise noted)  

Symbol  

Para

m

eter  

Value  

-45  

Unit  

BCX51  

BCX52  

BCX53  

BCX51  

BCX52  

BCX53  

V

CBO  

Collector-Base Voltage  

V

-60  

-100  

-45  

Collector-Emitter Voltage  

V

CEO  

V

-60  

-80  

V

EBO  

I

C  

Emitter-Base Voltage  

Collector Current  

-5  

V

A

-1  

P

C  

Collector Power Dissipation  

500  

mW  

℃

/

W  

℃

R

θ

JA  

T

j  

Thermal Resistance From Junction

T

o

A

mbient  

Junction

T

e

mperature  

250  

150  

T

stg  

Storage

T

e

mperature  

-55~+150  

℃

1

of

3  

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All right reserved

：

Heyuan China Base Electronics Technology Co., Ltd.  

ELECTRICAL CHARACTERISTICS (T

a

=25

℃

unless otherwise specified)  

Parameter  

Symbol  

T

e

st  

conditions  

Min  

-45  

-60  

-100  

-45  

-60  

-80  

-5  

Typ  

Max  

Unit  

BCX51  

BCX52  

BCX53  

BCX51  

BCX52  

BCX53  

Collector-base breakdown voltage  

V

(BR)CBO  

I

C

=-100µA,I

E

=0  

V

Collector-emitter breakdown voltage  

V

(BR)CEO

*

 

I

C

=-1

0

mA,I

B

=0  

V

Emitter-base breakdown voltage  

Collector cut-off current  

Emitter cut-off current  

V

(BR)EBO  

I

CBO  

I

E

=-100µA,I

C

=0  

V

CB

=-30

V

,

I

E

=0  

V

EB

=-5

V

,

I

C

=0  

V

-0.1  

-0.1  

µA  

µA  

I

EBO  

h

FE(1)

*  

h

FE(2)

*  

h

FE(3)

*  

V

CE(sat)

*  

V

BE

*  

V

CE

=-2

V

,

I

C

=-5mA  

63  

63  

40  

DC current gain  

V

CE

=-2

V

,

I

C

=-150mA  

V

CE

=-2

V

,

I

C

=-0.5A  

250  

Collector-emitter saturation voltage  

Base -emitter voltage  

I

C

=-0.5A,I

B

=-50mA  

-0.5  

-1  

V

V

V

CE

=-2

V

,

I

C

=-0.5A  

f

T  

V

CE

=-5V,I

C

=-10mA, f=100MHz  

50  

MHz  

Transition frequency  

* Pulse Test  

CLASSIFICATION OF

h

FE(2)  

BCX51  

BCX51-10  

BCX52-10  

BCX51-16  

BCX52-16  

BCX53-16  

BCX52  

RANK  

BCX53  

BCX53-10  

RANGE  

63

–

250  

63

–

160  

100

–

250  

2

of

3  

Copyright

©

All right reserved

：

Heyuan China Base Electronics Technology Co., Ltd.  

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3

of

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©

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：

Heyuan China Base Electronics Technology Co., Ltd.