CBI-C1815

C1815  

TRANSISTOR (NPN)  

FEATURE  

SOT-23  

Power dissipation  

1

．

BASE  

2

．

EMITTER  

3

．

COLLECTOR  

MARKING :

 

HF  

MAXIMUM RATINGS (T

A

=25

℃

unless otherwise noted)  

Symbol  

Parameter  

Value  

60  

Units  

V

V

CBO  

Collector-Base Voltage  

Collector-Emitter Voltage  

Emitter-Base Voltage  

V

CEO  

V

EBO  

I

C  

50  

V

5

V

Collector Current -Continuous  

Collector Power Dissipation  

Junction

T

e

mperature  

150  

200  

150  

-55-150  

mA  

mW  

℃

P

C  

T

j  

℃

T

stg  

Storage

T

e

mperature  

ELECTRICAL CHARACTERISTICS (Tamb=25

℃

unless otherwise specified)  

Symbol  

V

(BR)CBO  

V

(BR)CEO  

I

CBO  

Test conditions  

I

C

= 100µA,

 

I

E

=0  

I

C

= 0.1mA,

 

I

B

=0  

V

CB

=60

V

,

I

E

=0  

MIN  

TYP  

MAX  

UNIT  

V

Parameter  

60  

Collector-base breakdown voltage  

Collector-emitter breakdown voltage  

Collector cut-off current  

50  

V

0.1  

0.1  

0.1  

400  

0.25  

1

µA  

µA  

µA  

I

CEO  

V

CE

=50

V

,

I

B

=0  

Collector cut-off current  

I

EBO  

V

EB

= 5V,

 

I

C

=0  

Emitter cut-off current  

h

FE  

V

CE

= 6V,

 

I

C

= 2mA  

I

C

=100mA, I

B

= 10mA  

I

C

=100mA, I

B

= 10mA  

200  

80  

DC current gain  

V

CE

(sat)  

V

BE

(sat)  

V

V

Collector-emitter saturation voltage  

Base-emitter saturation voltage  

V

CE

=10

V

,

I

C

= 1mA,  

f=30MHz  

MHz  

f

T  

Transition frequency  

Page 1 of 3  

5/31/2011  

Typical Characteristics  

C1815  

Page 2 of 3  

5/31/2011  

PACKAGE OUTLINE  

Plastic surface mounted package; 3 leads  

SOT-23  

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